Photoelectric conversion device, method for manufacturing photoelectric conversion device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9876049-B2
Application number	US-201514950327-A
Country	US
Kind code	B2
Filing date	Nov 24, 2015
Priority date	Dec 5, 2014
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

An image sensor as a photoelectric conversion device includes: a lower electrode containing a high-melting-point metal; an upper electrode disposed in a layer higher than the lower electrode; a p-type semiconductor layer and an n-type semiconductor layer disposed between the lower electrode and the upper electrode; and a relay electrode containing the high-melting-point metal. The lower electrode and the relay electrode are formed in the same layer. An intermediate layer as a selenized film of the high-melting-point metal is formed on the lower electrode.

First claim

What is claimed is:

1. A photoelectric conversion device comprising:
a first electrode containing a first metal;
a second electrode disposed in a layer higher than the first electrode; a semiconductor layer disposed between the first electrode and the second electrode; and
a third electrode containing the first metal, wherein the first electrode and the third electrode are formed in the same layer, and
a selenized film of the first metal is formed directly on the first electrode,
wherein an insulating layer and a protective layer are located between the first electrode and the second electrode, the protective layer being formed from a material including silicon, and
wherein a layer thickness of the first electrode is thinner than a layer thickness of the third electrode.

2. The photoelectric conversion device according to claim 1 ,
wherein an insulating layer including an opening is formed on the first electrode and the third electrode, and
the selenized film is disposed in a region overlapping the opening in a plan view.

3. An electronic apparatus comprising:
the photoelectric conversion device according to claim 2 ; and
a light-emitting device stacked on the photoelectric conversion device.

4. The photoelectric conversion device according to claim 1 ,
wherein a metal oxide layer including an opening is formed on the first electrode and the third electrode, and
the selenized film is disposed in a region overlapping the opening in a plan view.

5. An electronic apparatus comprising:
the photoelectric conversion device according to claim 4 ; and
a light-emitting device stacked on the photoelectric conversion device.

6. The photoelectric conversion device according to claim 1 ,
wherein the second electrode and the third electrode are electrically connected.

7. The photoelectric conversion device according to claim 6 , further comprising a transistor,
wherein the third electrode is electrically connected to a gate electrode of the transistor.

8. An electronic apparatus comprising:
the photoelectric conversion device according to claim 7 ; and
a light-emitting device stacked on the photoelectric conversion device.

9. An electronic apparatus comprising:
the photoelectric conversion device according to claim 6 ; and
a light-emitting device stacked on the photoelectric conversion device.

10. The photoelectric conversion device according to claim 1 ,
wherein the semiconductor layer includes a semiconductor film with chalcopyrite structure.

11. An electronic apparatus comprising:
the photoelectric conversion device according to claim 10 ; and
a light-emitting device stacked on the photoelectric conversion device.

12. An electronic apparatus comprising:
the photoelectric conversion device according to claim 1 ; and
a light-emitting device stacked on the photoelectric conversion device.

Assignees

• Seiko Epson Corp

Inventors

• Kudo Manabu

Classifications

• H10W90/00

  Package configurations · CPC title

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H01L27/14649 Primary

  Electricity · mapped topic

• H01L31/022408

  Electricity · mapped topic

• H01L31/0322

  Electricity · mapped topic