Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

Patent metadata

Field	Value
Publication number	US-9876018-B2
Application number	US-201514958182-A
Country	US
Kind code	B2
Filing date	Dec 3, 2015
Priority date	Dec 3, 2015
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal oxide-comprising insulator material over a substrate. A composite stack comprising at least two different composition non-ferroelectric metal oxides is formed over the substrate. The composite stack has an overall conductivity of at least 1×10 2 Siemens/cm. The composite stack is used to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric. Conductive material is formed over the composite stack and the insulator material. Ferroelectric capacitors and ferroelectric field effect transistors independent of method of manufacture are also disclosed.

First claim

The invention claimed is:

1. A method used in forming an electronic component comprising conductive material and ferroelectric material, the method comprising:
forming a non-ferroelectric metal oxide-comprising insulator material over a substrate;
forming a composite stack comprising different composition non-ferroelectric metal oxides over the substrate, the composite stack having an overall conductivity of 1×10 2 Siemens/cm to 1×10 3 Siemens/cm;
using the composite stack to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric; and
forming conductive material over the composite stack and the insulator material.

2. The method of claim 1 wherein the metal oxide-comprising insulator material is rendered ferroelectric before forming any of the conductive material.

3. The method of claim 1 comprising forming the insulator material before forming the composite stack.

4. The method of claim 1 comprising forming the composite stack before forming the insulator material.

5. The method of claim 1 wherein the composite stack is formed to consist essentially of the different composition non-ferroelectric metal oxides.

6. The method of claim 1 wherein the composite stack is formed to additionally comprise SiO 2.

7. The method of claim 1 comprising forming the composite stack and the insulator material directly against one another.

8. The method of claim 7 wherein the composite stack is formed to consist essentially of the different composition non-ferroelectric metal oxides.

9. The method of claim 1 comprising forming the conductive material directly against the composite stack.

10. The method of claim 9 wherein the composite stack is formed to consist essentially of the different composition non-ferroelectric metal oxides.

11. The method of claim 1 comprising forming the conductive material directly against the insulator material.

12. The method of claim 1 comprising using the composite stack to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric during a depositing of the composite stack over the insulator material.

13. The method of claim 1 comprising using the composite stack to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric after a depositing of the composite stack over the insulator material.

14. The method of claim 1 comprising patterning the insulator material, the composite stack, and the conductive material into a ferroelectric field effect transistor gate construction.

15. The method of claim 1 wherein the insulator material is formed over conductor material, and further comprising patterning the conductive material, the composite stack, the insulator material, and the conductor material into a ferroelectric capacitor construction.

16. The method of claim 1 wherein each of the different composition non-ferroelectric metal oxides has conductivity of 1×10 2 Siemens/cm to 1×10 3 Siemens/cm.

17. The method of claim 1 wherein at least one of the different composition non-ferroelectric metal oxides does not have conductivity of 1×10 2 Siemens/cm to 1×10 3 Siemens/cm.

18. The method of claim 1 comprising forming the composite stack to comprise only two different composition non-ferroelectric metal oxides.

19. The method of claim 18 comprising forming the composite stack to comprise two alternating layers of each of the two different composition non-ferroelectric metal oxides.

20. The method of claim 1 wherein the different composition non-ferroelectric metal oxides are selected from among TiO x , AlO x , Al 2 O 3 , ScO x , Sc 2 O 3 , ZrO x , YO x , Y 2 O 3 , MgO x , MgO, HfO x , SrO x , SrO, Ta x O y , NbO x , GdO x , MoO x , RuO x , LaO x , V x O y , IrO x , CrO x , ZnO x , PrO x , CeO x , SmO x , and LuO x.

21. The method of claim 1 wherein the insulator material is formed over a non-ferroelectric metal oxide-comprising insulative material that is non-ferroelectric in a finished circuitry construction comprising the electronic component.

22. The method of claim 21 comprising forming the insulator material directly against the non-ferroelectric metal oxide-comprising insulative material.

23. The method of claim 21 comprising using the non-ferroelectric metal oxide-comprising insulative material to invoke a desired crystalline structure in the insulator material as initially-formed and while it is non-ferroelectric.

24. The method of claim 21 comprising using the non-ferroelectric metal oxide-comprising insulative material to invoke a desired crystalline structure in the ferroelectric-rendered metal oxide-comprising insulator material.

25. The method of claim 1 wherein the conductive material comprises one or more of IrO x , SrRuO 3 , RuO x , LSCO; TiSi x , TaSi x , RuSi x , WN x Si y , Ru, TiAIN, TaN, WN x , TiSi x N y , TaSi x N y , RuSi x N y , and RuSi x Ti y N z.

26. A method used in forming an electronic component comprising conductive material and ferroelectric material, the method comprising:
forming a composite stack comprising different composition non-ferroelectric metal oxides over a substrate, the composite stack having an overall conductivity of 1×10 2 Siemens/cm to 1×10 3 Siemens/cm;
forming a metal oxide-comprising insulator material over the composite stack and to be ferroelectric upon its initial formation by using the composite stack to render ferroelectric what would otherwise be a non-ferroelectric metal oxide-comprising insulator material formed under identical conditions without presence of the composite stack; and
forming conductive material over the composite stack and the insulator material.

27. A method used in forming an electronic component comprising conductive material and ferroelectric material, the method comprising:
forming a non-ferroelectric metal oxide-comprising insulator material over a substrate;
forming a composite stack comprising different composition non-ferroelectric metal oxides over the substrate; the different composition non-ferroelectric metal oxides being selected from among TiO x , AIO x , Al 2 O 3 , ScO x , Sc 2 O 3 , ZrO x , YO x , Y 2 O 3 , MgO x , MgO, HfO x , SrO x , SrO, Ta x O y , NbO x , GdO x , MoO x , RuO x , LaO x , V x O y , IrO x , CrO x , ZnO x , PrO x , CeO x , SmO x , and LuO x ;
using the composite stack to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric; and
forming conductive material over the composite stack and the insulator material.

28. The method of claim 27 wherein the metal oxide-comprising insulator material is rendered ferroelectric before forming any of the conductive material.

29. The method of claim 27 comprising forming the insulator material before forming the composite stack.

30. The method of claim 27 comprising forming the composite stack before forming the insulator material.

31. The method of claim 27 wherein the composite stack is formed to consist essentially of the different composition non-ferroelectric metal oxides.

32. The method of claim 27 wherein the composite stack is formed to additionally comprise SiO 2.

33. The method of claim 27 comprising forming the composite stack and the insulator material directly against one another.

34. Th

Assignees

• Micron Technology Inc

Inventors

• Chavan Ashonita A
• Ramaswamy Durai Vishak Nirmal
• Nahar Manuj

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D64/0132

  the conductor being a metallic silicide · CPC title

• H01L29/517

  Electricity · mapped topic

• H01L29/4975

  Electricity · mapped topic