Method for producing an optoelectronic semiconductor chip

Patent metadata

Field	Value
Publication number	US-9876001-B2
Application number	US-201715462710-A
Country	US
Kind code	B2
Filing date	Mar 17, 2017
Priority date	Aug 21, 2013
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

First claim

What is claimed is:

1. A method for producing an optoelectronic semiconductor chip, the method comprising:
providing a semiconductor body with a pixel region comprising different subpixel regions, each subpixel region having a radiation exit face;
applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant; and
depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores,
wherein the radiation exit face of each subpixel region is located at a front surface of the semiconductor body,
wherein the radiation exit face of each subpixel region is electrically conductive,
wherein the electrically conductive layer is applied over the entire front surface of the semiconductor body, and
wherein a photoresist layer is applied onto the electrically conductive layer in at least one subpixel region, while the electrically conductive layer is freely accessible in a further subpixel region.

2. The method according to claim 1 , wherein the subpixel regions are electrically insulated from one another and each subpixel region comprises an active layer that is suitable for emitting electromagnetic radiation of a first wavelength range.

3. The method according to claim 2 ,
wherein a radiation exit face of each subpixel region is formed by a passivation layer, and
wherein the passivation layer is removed from the radiation exit face of at least one subpixel region, such that the radiation exit face of the subpixel region is made electrically conductive, while the passivation layer is retained in at least one subpixel region.

4. The method according to claim 3 ,
wherein the passivation layer is removed in a further subpixel region, such that the radiation exit face of the further subpixel region is made electrically conductive,
wherein the electrically conductive layer is applied onto the radiation exit face of the further subpixel region, and
wherein a further conversion layer is deposited on the electrically conductive layer using an electrophoresis process.

5. The method according to claim 1 ,
wherein the radiation exit face of each subpixel region is electrically conductive, and
wherein using the electrophoresis process comprises supplying current to the subpixel region onto which the conversion layer is applied, the current being supplied independently of another subpixel region.

6. The method according to claim 5 , wherein the electrically conductive radiation exit face of the subpixel regions is formed by a transparent electrically conductive layer, which comprises a TCO material.

7. The method according to claim 5 , wherein the electrically conductive radiation exit face is produced by removal of a passivation layer overlying the subpixel region.

8. The method according to claim 1 , wherein the pixel region comprises precisely three subpixel regions,
wherein a first subpixel region remains free of a conversion layer,
wherein a second subpixel region is provided with the conversion layer, the conversion layer being suitable for converting radiation of a first wavelength range into radiation of a second wavelength range, and
wherein a third subpixel region is provided with a further conversion layer, the further conversion layer being suitable for converting radiation of the first wavelength range into radiation of a third wavelength range different from the first and second wavelength ranges.

9. The method according to claim 8 , wherein the first wavelength range comprises blue light, the second wavelength range comprises green light and the third wavelength range comprises red light.

10. The method according to claim 1 , wherein the electrically conductive layer is introduced into the protic reactant, such that the electrically conductive layer at least in part forms a salt with the protic reactant.

11. The method according to claim 10 , wherein at least part of the salt is washed out of the optoelectronic semiconductor chip.

12. The method according to claim 10 , wherein the protic reactant is present as a gas or a liquid.

13. The method according to claim 1 , wherein the electrically conductive layer comprises a material selected from the group consisting of lithium, sodium, potassium, rubidium, caesium, beryllium, calcium, magnesium, strontium, barium, scandium, titanium, aluminum, silicon, gallium, tin, zirconium, zinc oxide, zinc sulfide, zinc selenide, zinc telluride and tin oxide.

14. The method according to claim 1 , wherein the electrically conductive layer has a thickness between 20 nanometers and 100 nanometers inclusive.

15. The method according to claim 1 , wherein the conversion layer comprises particles of a luminescent material, and wherein a diameter of the particles does not exceed 5 microns.

16. The method according to claim 1 , wherein the electrically conductive layer is electrically contacted laterally during the electrophoresis process.

17. A method for producing an optoelectronic semiconductor chip, the method comprising:
providing a semiconductor body with a pixel region comprising different subpixel regions, each subpixel region having a radiation exit face;
applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant; and
depositing a conversion layer on the electrically conductive layer using an electrophoresis process,
wherein the radiation exit face of each subpixel region is electrically conductive, and
wherein using the electrophoresis process comprises supplying current to the subpixel region onto which the conversion layer is applied, the current being supplied independently of another subpixel region.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Goeoetz Britta
• Stoll Ion
• Von Malm Norwin

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• C25D13/02 Primary

  with inorganic material · CPC title

• C25D13/12

  characterised by the article coated · CPC title

• H01L27/156

  Electricity · mapped topic

• H01L25/167 Primary

  Electricity · mapped topic