Heated capacitor and method of forming the heated capacitor

Patent metadata

Field	Value
Publication number	US-9875846-B2
Application number	US-201615042319-A
Country	US
Kind code	B2
Filing date	Feb 12, 2016
Priority date	May 28, 2014
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A heated capacitor runs current through either a lower metal plate, an upper metal plate, a lower metal trace that lies adjacent to a lower metal plate, an upper metal trace that lies adjacent to an upper metal plate, or both a lower metal trace that lies adjacent to a lower metal plate and an upper metal trace that lies adjacent to an upper metal plate to generate heat from the resistance to remove moisture from a moisture-sensitive insulating layer.

First claim

What is claimed is:

1. A method of forming a heated capacitor comprising:
forming a first metal structure on a substrate having a first lateral end and a second lateral end opposite the first lateral end;
forming a non-conductive layer that touches the first metal structure;
forming a second metal structure that touches the non-conductive layer, wherein the non-conductive layer isolates the first metal structure from the second metal structure and wherein the second metal structure forms a first capacitor plate of the heated capacitor; and
connecting the first lateral end of the first metal structure to a first pad of the substrate to receive a first voltage and the second lateral end to a second pad of the substrate to receive a second voltage, the first voltage and the second voltage being different, the difference between the first voltage and the second voltage to cause a current to flow into, through, and out of the first metal structure, the current to generate heat from a resistance of the first metal structure, the heat to remove moisture from the non-conductive layer.

2. The method of claim 1 and further comprising forming a third metal structure when the first metal structure is formed, the non-conductive layer isolating the third metal structure from the first metal structure and the second metal structure, the second metal structure lying directly above the third metal structure, the first metal structure lying laterally adjacent to the third metal structure, wherein the third metal structure forms a second capacitor plate of the heated capacitor.

3. The method of claim 2 and further comprising:
forming a fourth metal structure when the second metal structure is formed, the fourth metal structure lying laterally adjacent to the second metal structure, and touching the non-conductive layer, wherein the non-conductive layer isolates the fourth metal structure from the first, second, and third metal structures; and
connecting the fourth metal structure to receive a third voltage and a fourth voltage, the third voltage and the fourth voltage being different, the difference between the third voltage and the fourth voltage to cause a current to flow into, through, and out of the fourth metal structure, the current flowing through the fourth metal structure to generate heat from a resistance of the fourth metal structure, the heat from the current flowing through the fourth metal structure to remove moisture from the non-conductive layer.

4. The method of claim 1 , wherein the first metal structure does not extend directly under or over the third metal structure or the second metal structure.

5. A method of forming a heated capacitor comprising:
forming a first metal structure on a substrate, wherein the first metal structure forms a first capacitor plate of the heated capacitor;
forming a non-conductive layer that touches the first metal structure;
forming a second metal structure that touches the non-conductive layer, wherein the second metal structure has a first lateral end and a second lateral end opposite the first lateral end and wherein the non-conductive layer isolates the first metal structure from the second metal structure; and
connecting the first lateral end of the second metal structure to a first pad of the substrate to receive a first voltage and the second lateral end to a second pad of the substrate to receive a second voltage, the first voltage and the second voltage being different, the difference between the first voltage and the second voltage to cause a current to flow into, through, and out of the second metal structure, the current to generate heat from a resistance of the second metal structure, the heat to remove moisture from the non-conductive layer.

6. The method of claim 5 and further comprising forming a third metal structure when the second metal structure is formed, the third metal structure forming a second capacitor plate, lying laterally adjacent to the second metal structure, touching the non-conductive layer, and lying directly over the first metal structure, the non-conductive layer isolating the third metal structure from the first metal structure and the second metal structure.

7. The method of claim 5 , wherein the second metal structure does not extend directly under or over the third metal structure or the first metal structure.

8. A method of forming a capacitor comprising:
forming a first metal structure having a first lateral end and a second lateral end opposite the first lateral end;
forming a non-conductive layer that touches the first metal structure;
forming a second metal structure, the second metal structure touching the non-conductive layer;
forming a third metal structure such that the second metal structure, the non-conductive layer, and the third metal structure form a capacitor, wherein the first metal structure and the third metal structure are formed directly on a same layer; and
forming a first pad and a first connection extending from the first pad to the first lateral end of the first metal structure and forming a second pad and a second connection extending from the second pad to the second lateral end of the first metal structure.

9. The method of claim 8 , wherein the first metal structure and the third metal structure are formed simultaneously such that the first metal structure is laterally spaced from at least three sides of the third metal structure by the non-conductive layer.

10. The method of claim 9 and further comprising:
forming a fourth metal structure simultaneously with second metal structure, the fourth metal structure lying laterally adjacent to the second metal structure, and touching the non-conductive layer; and
forming a third pad electrically connected to a fourth pad through the fourth metal structure.

11. The method of claim 8 , wherein the third metal structure overlies the second metal structure.

12. The method of claim 8 , wherein the second metal structure overlies the third metal structure.

13. The method of claim 8 , wherein the first metal structure is located laterally outside of the capacitor and does not extend directly under or over the third metal structure or the second metal structure.

14. The method of claim 8 , wherein the first, second, and third metal structures are isolated from each other by the non-conductive layer.

Assignees

• Texas Instruments Inc

Inventors

• Guo Honglin
• Williams Byron Lovell

Classifications

• H01G2/08 Primary

  Cooling arrangements; Heating arrangements; Ventilating arrangements · CPC title

• Y10T29/42

  Piezoelectric device making · CPC title

• H01G4/18

  of synthetic material, e.g. derivatives of cellulose (H01G4/16 takes precedence) · CPC title

• H01G4/018

  Dielectrics · CPC title

• H01B3/306

  Polyimides or polyesterimides · CPC title