Generating manufacturable sub-resolution assist feature shapes from a usefulness map

Patent metadata

Field	Value
Publication number	US-9875334-B2
Application number	US-201615155425-A
Country	US
Kind code	B2
Filing date	May 16, 2016
Priority date	May 16, 2016
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

An illustrative method includes providing a layout of at least a portion of a photomask, the layout comprising a plurality of target features, each target feature having a shape in accordance with a corresponding one of at least one target shape, for each of the target shapes, providing a local map specifying a respective value of a local sub-resolution assist feature (SRAF) usefulness for each of a plurality of positions relative to the target shape, generating a global usefulness map specifying a respective global SRAF usefulness for each of the plurality of positions relative to at least a portion of the photomask on the basis of the assignment of the values of the local SRAF usefulness.

First claim

What is claimed:

1. A method, comprising:
providing a layout of at least a portion of a photomask, said layout comprising a plurality of target features, each target feature having a shape in accordance with a corresponding one of at least one target shape;
for each of said at least one target shape, providing a local map specifying a respective value of a local sub-resolution assist feature (SRAF) usefulness for each of a plurality of positions relative to said target shape;
generating a global usefulness map specifying a respective global SRAF usefulness for each of said plurality of positions relative to said at least a portion of said photomask on the basis of the assignment of the values of said local SRAF usefulness;
determining a minimal threshold as well as a minimal step width for changing a threshold;
determining a threshold of global SRAF usefulness of said generated global usefulness map;
while said threshold is less than said minimal threshold:
selecting a subset of said plurality of positions relative to said at least a portion of said photomask at which said global SRAF usefulness exceeds said threshold global SRAF usefulness and correspondingly placing minimal sized SRAFs as seeds for SRAF growth at said positions;
for each of said selected seeds, growing the respective SRAF area so as to maximize said SRAF usefulness while fulfilling predetermined plausibility check rules; and
changing said threshold by said step width;
in case said threshold is equal to or larger than said minimal threshold, saving said generated SRAFs; and
manufacturing a photomask comprising the plurality of target features and said generated SRAFs.

2. The method of claim 1 , wherein growing said respective SRAF area comprises selecting a next edge of said respective SRAF available for modification and, if a next edge of said SRAF is available, moving said edge by a predetermined granularity so as to enlarge said SRAF area and thereby obtain a latest change of said SRAF.

3. The method of claim 2 , wherein if a next edge of said SRAF is not available, ending said growing step.

4. The method of claim 2 , wherein said growing step comprises calculating a SRAF usefulness of said enlarged SRAF.

5. The method of claim 4 , wherein said plausibility check rules comprise checking if said calculated SRAF usefulness of said enlarged SRAF is equal to or larger than a predetermined level, and if this check is affirmative, taking back the latest change of said SRAF, else continuing said growing step.

6. The method of claim 5 , wherein said predetermined level is zero.

7. The method of claim 1 , wherein said plausibility check rules comprises checking mask rule compliance (MRC) and if the check is not affirmative, taking back the latest change of said SRAF, else continuing said growing step.

8. The method of claim 7 , wherein said MRC rules are predetermined rules provided from geometrical constraints and/or from vendors of optical proximity correction software.

9. The method of claim 7 , wherein said plausibility check rules further comprise checking if said enlarged SRAF is closer to another SRAF than a predetermined distance and if the check is affirmative, taking back the latest change of said SRAF, else continuing said growing step.

10. The method of claim 4 , wherein said growing step further comprises checking if said calculated SRAF usefulness of said enlarged SRAF has increased, i.e., become more negative, and if the answer is not affirmative, taking back the latest change of said SRAF, else recording the position of the modified edge and continuing said growing step.

11. The method of claim 1 , wherein providing a layout of said at least a portion of said photomask and/or providing a local map specifying a respective value of said local sub-resolution assist feature (SRAF) usefulness for each of said plurality of positions relative to said target shape for each of said at least one target shape comprises reading said layout of said at least a portion of said photomask and/or reading said local map of SRAF usefulness for each of said at least one target shape from a prestored library.

12. The method of claim 1 , wherein determining said minimal threshold as well as said minimal step width for changing a threshold comprises reading said minimal threshold as well as said minimal step width from a prestored library.

13. The method of claim 1 , wherein said local SRAF usefulness for said position relative to said target shape is a parameter being indicative of a change of a process window obtainable in a photolithography process wherein a photoresist is patterned with only said target shape by placing an SRAF element at said position relative to said target shape.

14. The method of claim 1 , wherein generating said global usefulness map comprises calculating, for each of said plurality of positions relative to said at least a portion of said photomask, a value of a function of each of said values of said local SRAF usefulness assigned to the respective position relative to said at least a portion of said photomask.

15. The method of claim 14 , wherein the function comprises a sum of each of said values of said local SRAF usefulness assigned to the respective position relative to said at least a portion of said photomask.

16. The method of claim 1 , wherein selecting a subset of said plurality of positions relative to said at least a portion of said photomask at which said global SRAF usefulness exceeds said threshold global SRAF usefulness comprises selecting said subset of said plurality of positions relative to said at least a portion of said photomask at which said global SRAF usefulness exceeds said threshold of global SRAF usefulness, wherein a magnitude of said threshold is reduced by 2-5%.

17. The method of claim 1 , wherein said placing of said one or more SRAFs in said layout on the basis of said global usefulness map comprises:
approximating said selected subset of said plurality of positions by means of a plurality of substantially rectangular SRAF elements.

Assignees

• Globalfoundries Inc

Inventors

• Lutich Andrey

Classifications

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G06F17/5081 Primary

  Physics · mapped topic

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title