Methods of vapor deposition with multiple vapor sources

Patent metadata

Field	Value
Publication number	US-9873942-B2
Application number	US-201514966335-A
Country	US
Kind code	B2
Filing date	Dec 11, 2015
Priority date	Feb 6, 2012
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

Methods of vapor deposition include multiple vapor sources. A vapor deposition method includes delivering pulses of a vapor containing a first source chemical to a reaction space from at least two separate source vessels simultaneously. The pulses can contain a substantially consistent concentration of the first source chemical. The method can include purging the reaction space of an excess of the first source chemical after the delivering, and delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after the purging.

First claim

What is claimed is:

1. A method of depositing material on a substrate, comprising:
providing the substrate in a reaction space; and
after providing the substrate, delivering pulses of a vapor containing a first source chemical to the reaction space from at least two separate source vessels simultaneously.

2. The method of claim 1 , wherein said pulses contain a substantially consistent concentration of the first source chemical.

3. The method of claim 1 , further comprising:
purging the reaction space of an excess of the first source chemical after said delivering; and
delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after said purging.

4. The method of claim 3 , wherein purging comprises flowing an inactive gas into the reaction space.

5. The method of claim 3 , further comprising, after said delivering pulses of the vapor containing the second source chemical, purging the reaction space of an excess of the second source chemical.

6. The method of claim 1 , wherein the first source chemical is a solid.

7. A method for atomic layer deposition (ALD), comprising:
providing a substrate; and
forming a conformal thin film directly over a feature of the substrate by alternatingly exposing the substrate to a first reactant species and a second reactant species in a plurality of ALD cycles, wherein the first reactant species is supplied from a plurality of separate sources during forming the conformal thin film.

8. The method of claim 7 , wherein exposing comprises alternately pulsing the first reactant species from the plurality of sources.

9. The method of claim 7 , wherein the feature comprises a trench.

10. The method of claim 9 , wherein the trench comprises a DRAM capacitor trench.

11. The method of claim 7 , the feature having an aspect ratio of at least 10:1.

12. The method of claim 7 , wherein forming the conformal thin film comprises forming a metal oxide.

13. The method of claim 7 , wherein the first reactant species comprises a metal precursor.

14. A method of depositing material on features of a substrate, comprising:
providing a substrate with a trench having an aspect ratio of at least 10:1; and
exposing the substrate alternatingly to a first precursor and a second precursor in a plurality of atomic layer deposition cycles to form a thin film having at least 80% step coverage directly over the trench, wherein the first precursor comprises a metal halide, wherein exposing comprises supplying the first precursor from a plurality of separate source vessels.

15. The method of claim 14 , wherein supplying comprises simultaneously pulsing the first precursor from the separate source vessels.

16. The method of claim 14 , wherein exposing the substrate to the first precursor comprises exposing the substrate to a metal halide.

17. The method of claim 14 , wherein exposing the substrate to the first precursor comprises exposing the substrate to a metal chloride.

18. The method of claim 14 , wherein the thin film comprises a metal oxide.

19. The method of claim 14 , further comprising maintaining the substrate at a temperature of about 100-500° C. during said exposing.

Assignees

• Asm Ip Holding Bv

Inventors

• Pomarede Christophe
• Shero Eric
• Verghese Mohith
• Maes Jan Willem
• Wang Chang-Gong

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10D64/01342

  by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence) · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/693

  the material containing hafnium, e.g. HfSiOx or HfSiON · CPC title