US9871215B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9871215-B2 |
| Application number | US-201715645208-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 10, 2017 |
| Priority date | Nov 21, 2013 |
| Publication date | Jan 16, 2018 |
| Grant date | Jan 16, 2018 |
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A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.
Opening claim text (preview).
What is claimed is: 1. A transistor manufacturing method comprising: forming a first insulator layer on a substrate on which a source electrode, a drain electrode, and a semiconductor layer in contact with surfaces of the source electrode and the drain electrode are formed so as to cover the semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a plating base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the plating base film, forming a gate electrode on the surface of the plating base film by electroless plating, wherein the forming of the plating base film is performed by applying a liquid substance which is a formation material of the plating base film to the surface of the second insulator layer, a formation material of the first insulator layer is a resin including no polar group, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer. 2. The transistor manufacturing method according to claim 1 , wherein the polar group is any of a carbonyl group, an amino group, and a hydroxyl group. 3. The transistor manufacturing method according to claim 1 , wherein the semiconductor layer is an organic semiconductor layer. 4. The transistor manufacturing method according to claim 1 , wherein the forming of the first insulator layer is performed by applying a solution which includes the resin including no polar group and a solvent that dissolves the resin including no polar group, on a surface of the semiconductor layer. 5. The transistor manufacturing method according to claim 1 , wherein in the forming of the first insulator layer, the first insulator layer is formed so as to entirely cover an upper surface and a lateral surface of the semiconductor layer. 6. The transistor manufacturing method according to claim 1 , wherein the liquid substance includes a silane coupling agent, and the silane coupling agent includes a group having at least one of a nitrogen atom and a sulfur atom. 7. The transistor manufacturing method according to claim 6 , wherein the silane coupling agent has an amino group. 8. The transistor manufacturing method according to claim 7 , wherein the silane coupling agent is a primary amine or a secondary amine. 9. The transistor manufacturing method according to claim 1 , wherein the liquid substance includes a solution in which a resin material is dissolved and a filler that is dispersed in the solution. 10. The transistor manufacturing method according to claim 1 , wherein the substrate is made of a non-metallic material. 11. The transistor manufacturing method according to claim 10 , wherein the substrate is made of a resin material. 12. The transistor manufacturing method according to claim 11 , wherein the substrate has flexibility. 13. The transistor manufacturing method according to claim 1 , wherein the source electrode has a first electrode and a second electrode that covers a surface of the first electrode. 14. The transistor manufacturing method according to claim 13 , wherein a formation material of the first electrode is nickel phosphorus. 15. The transistor manufacturing method according to claim 13 , wherein a formation material of the second electrode is gold. 16. The transistor manufacturing method according to claim 1 , wherein the drain electrode has a third electrode and a fourth electrode that covers a surface of the third electrode. 17. The transistor manufacturing method according to claim 16 , wherein a formation material of the third electrode is nickel phosphorus. 18. The transistor manufacturing method according to claim 16 , wherein a formation material of the fourth electrode is gold. 19. A transistor comprising: a substrate on which a source electrode and a drain electrode are formed; a semiconductor layer in contact with surfaces of the source electrode and the drain electrode; a first insulator layer that is provided so as to cover the semiconductor layer; a second insulator layer that is provided so as to cover the first insulator layer; a plating base film that is provided on at least part of a surface of the second insulator layer; and a gate electrode that is provided on a surface of the plating base film, wherein a formation material of the first insulator layer is a resin including no polar group, and the second insulator layer has a higher lyophilic property with respect to an organic solvent than the first insulator layer. 20. The transistor according to claim 19 , wherein the polar group is any of a carbonyl group, an amino group, and a hydroxyl group. 21. The transistor according to claim 19 , wherein the plating base film includes a silane coupling agent, and the silane coupling agent includes a group having at least one of a nitrogen atom and a sulfur atom. 22. The transistor according to claim 19 , wherein the plating base film includes a resin film and a filler that is dispersed in the resin film. 23. The transistor according to claim 19 , wherein the semiconductor layer is an organic semiconductor layer. 24. The transistor according to claim 19 , wherein the substrate is made of a non-metallic material. 25. The transistor according to claim 24 , wherein the substrate is made of a resin material. 26. The transistor according to claim 25 , wherein the substrate has flexibility. 27. The transistor according to claim 19 , wherein the source electrode has a first electrode and a second electrode that covers a surface of the first electrode. 28. The transistor according to claim 27 , wherein a formation material of the first electrode is nickel phosphorus. 29. The transistor according to claim 27 , wherein a formation material of the second electrode is gold. 30. The transistor according to claim 19 , wherein the drain electrode has a third electrode and a fourth electrode that covers a surface of the third electrode. 31. The transistor according to claim 30 , wherein a formation material of the third electrode is nickel phosphorus. 32. The transistor according to claim 30 , wherein a formation material of the fourth electrode is gold.
Coating with metals · CPC title
Coating with nickel, cobalt or mixtures thereof with phosphorus or boron (C23C18/50 takes precedence) · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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