Ion beam apparatus generating ion beams of bilateral symmetry

Patent metadata

Field	Value
Publication number	US-9871194-B2
Application number	US-201715449897-A
Country	US
Kind code	B2
Filing date	Mar 3, 2017
Priority date	Nov 25, 2014
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

First claim

What is claimed is:

1. An ion beam apparatus comprising:
a stage on which a substrate can be loaded;
an ion source part provided over the stage and capable of generating an ion beam; and
an ion beam control part provided between the stage and the ion source part, the ion beam control part capable of controlling an optical path of the ion beam radiated to a surface of the substrate,
wherein the ion beam control part comprises:
a first grid and a second grid horizontally spaced apart from each other,
wherein, during operation, the ion beam is divided into a first ion beam and a second ion beam by the first and second grids,
wherein, during operation, the first ion beam is guided by the first grid to be radiated to the surface of the substrate at a first incidence angle,
wherein, during operation, the second ion beam is guided by the second grid to be radiated to the surface of the substrate at a second incidence angle,
wherein, during operation, the first ion beam and the second ion beam are substantially symmetrically provided with respect to each other about a normal line that is perpendicular to the surface of the substrate, and
wherein the first incidence angle and the second incidence angle are adjustable by adjusting a tilt angle of the first grid and a tilt angle of the second grid.

2. The ion beam apparatus of claim 1 ,
wherein the first ion beam and the second ion beam are guided to be radiated to one region of the surface of the substrate, and
wherein the one region of the surface of the substrate is a region of a range corresponding to a distance between patterns which are to be formed using the first ion beam and the second ion beam.

3. The ion beam apparatus of claim 2 ,
wherein the first ion beam and the second ion beam are radiated to the one region of the surface of the substrate at substantially the same time.

4. The ion beam apparatus of claim 2 ,
wherein the first incidence angle is approximately equal to the second incidence angle.

5. The ion beam apparatus of claim 1 ,
wherein each of the first grid and the second grid comprises:
a first sub-grid and a second sub-grid sequentially stacked, each of the first sub-grid and the second sub-grid having a plurality of holes,
wherein each of the plurality of holes of the first sub-grid is substantially aligned with a corresponding one of the plurality of holes of the second sub-grid.

6. The ion beam apparatus of claim 5 ,
wherein each of the first grid and the second grid guides each of the first ion beam and the second ion beam using an electric field that is generated by supplying the first sub-grid and the second sub-grid with different voltages from each other.

7. The ion beam apparatus of claim 6 ,
wherein an electric field is not generated in a space between the substrate and the ion beam control part.

8. The ion beam apparatus of claim 5 ,
wherein each of the first grid and the second grid further comprises:
a third sub-grid having a plurality of holes, the third sub-grid disposed between the first sub-grid and the second sub-grid,
wherein each of the plurality of holes of the third sub-grid is substantially aligned with a corresponding one of the plurality of holes of the first sub-grid and a corresponding one of the plurality of holes of the second sub-grid.

9. The ion beam apparatus of claim 8 ,
wherein the first grid and the second grid guide a corresponding one of the first ion beam and the second ion beam using an electric field that is generated by supplying the first sub-grid, the second sub-grid, and the third sub-grid with different voltages from each other.

10. The ion beam apparatus of claim 1 ,
wherein the ion beam control part further comprises:
a connection part provided between the first grid and the second grid,

wherein each of the connection part, the first grid, and the second grid has a substantially bar-like shape extending in a first direction when viewed in plan view, and
wherein a first end of the connection part face a second end of the connection part in a second direction that intersects the first direction,
wherein the first end of the connection part is connected to one end of the first grid, and
wherein the second end of the connection part is connected to one end of the second grid.

11. The ion beam apparatus of claim 10 ,
wherein the ion beam control part further comprises:
a support part supporting the first grid and the second grid, and
wherein another end of the first grid and another end of the second grid are connected to the support part.

12. The ion beam apparatus of claim 11 ,
wherein the connection part is disposed at a level that is higher than that of the support part from a top surface of the stage, and
wherein each of the first grid and the second grid is tilted with respect to the top surface of the stage.

13. The ion beam apparatus of claim 12 , wherein the first grid and the second grid are arranged symmetrical to each other with the connection part interposed therebetween.

14. The ion beam apparatus of claim 13 ,
wherein the support part is disposed at a level lower than that of the first grid and that of the second grid from the top surface of the stage.

15. The ion beam apparatus of claim 12 ,
wherein the first incidence angle and the second incidence angle are adjustable by tilting the first grid and the second grid at different angles with respect to the top surface of the stage.

16. The ion beam apparatus of claim 15 ,
wherein angles at which the first grid and the second grid are tilted with respect to the top surface of the stage are adjustable by changing a first vertical distance between the connection part and the support part.

17. The ion beam apparatus of claim 16 ,
wherein a second vertical distance between the top surface of the stage and the support part is adjustable to guide the first ion beam and the second ion beam to one region on the substrate when the first vertical distance between the connection part and the support part is changed, and
wherein the one region is a region of a range corresponding to a distance between adjacent patterns on the substrate which are to be formed using the first ion beam and the second ion beam.

18. An ion beam apparatus, comprising:
a plasma chamber and a process chamber; and
an ion beam control part arranged between the plasma chamber and the process chamber, wherein the ion beam control part comprises:
a first grid configured to supply a first ion beam to a substrate to be arranged in the process chamber at a first incidence angle; and
a second grid configured to supply a second ion beam to the substrate to be arranged in the process chamber at a second incidence angle,

wherein the first incidence angle and the second incidence angle are substantially the same in magnitude, and
wherein the first ion beam and the second ion beam are substantially symmetrical to each other about a normal line that is perpendicular to the substrate, and
wherein the first incidence angle and the second incidence angle are adjustable by adjusting a tilt angle of the first grid and a tilt angle of the second grid.

19. The ion beam apparatus of claim 18 ,
wherein a distance between the ion beam control part and the substrate is adjustable.

Assignees

• Park Jongchul
• Kwon Hyungjoon
• Samsung Electronics Co Ltd

Inventors

• Park Jongchul
• Kwon Hyungjoon

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• H01J37/32623

  Mechanical discharge control means · CPC title

• H01J2237/3174

  Etching microareas · CPC title

• H01J2237/334

  Etching · CPC title