Method of adjusting tilt using magnetic erase width feedback

US9870788B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9870788-B2
Application numberUS-201414276111-A
CountryUS
Kind codeB2
Filing dateMay 13, 2014
Priority dateJan 8, 2014
Publication dateJan 16, 2018
Grant dateJan 16, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method is provided for manufacturing a magneto-resistive device, comprising the steps of: extracting at least one subset of bars from at least one bar section of a wafer; obtaining a magnetic performance of the at least one subset of the bars; determining an angle based on the magnetic performance; and processing remaining bars from the at least one bar section of the wafer based on the determined angle.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a magneto-resistive device, comprising: extracting a first subset of bars and a second subset of bars from a first bar section of a wafer, the wafer including a plurality of bar sections stacked in a first direction, wherein each bar section extends in a second direction substantially perpendicular to the first direction, wherein each bar section of the plurality of bar sections includes a plurality of bars that are adjacent to one another, and wherein the first subset of bars includes at least two bars; obtaining a magnetic performance of the first subset of bars; determining, for the second subset of bars, an angle based on the magnetic performance, wherein the determined angle comprises an air bearing surface (ABS) tilt angle of the second subset of bars optimizing the magnetic performance of the magneto-resistive device; and processing the second subset of bars from the first bar section of the wafer based on the determined angle such that the ABS tilt angle of the second subset of bars is different than an ABS tilt angle of the first subset of bars. 2. The method of claim 1 , wherein the first subset of bars extracted from the first bar section of the wafer comprises a top bar extracted from a top portion of the first bar section, a middle bar extracted from a middle portion of the first bar section, and a bottom bar extracted from a bottom portion of the first bar section. 3. The method of claim 1 , wherein obtaining the magnetic performance comprises determining a magnetic erase width profile of the at least one subset of bars. 4. The method of claim 1 , wherein the magneto-resistive device comprises a magnetic read head. 5. The method of claim 1 , wherein the determined angle comprises a 90 degree angle having a variance up to +/−0.5 degrees. 6. The method of claim 1 , further comprising grinding and slicing the first subset of bars, subjecting the first subset of bars to a first lapping process, and performing slider fabrication and head-gimbal assembly processing on the first subset of bars prior to obtaining the magnetic performance of the first subset of bars, wherein the processing of the second subset of bars comprises grinding and slicing the second subset of bars at the determined angle. 7. The method of claim 6 , wherein the processing of the second subset of bars further comprises subjecting the second subset of bars to a second lapping process to fine-tune an ABS perpendicularity of the second subset of bars. 8. The method of claim 6 , wherein the magneto-resistive device comprises a magnetic read head. 9. The method of claim 8 , wherein the ABS tilt angle of the second subset of bars comprises a 90 degree angle having a variance up to +/−0.5 degrees.

Assignees

Inventors

Classifications

  • Multitrack heads having integral holding means · CPC title

  • Arrangements for functional testing of heads; Measuring arrangements for heads · CPC title

  • Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks (G11B5/3113, G11B5/245 take precedence) · CPC title

  • Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers · CPC title

  • with significant slider/housing shaping or treating · CPC title

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What does patent US9870788B2 cover?
A method is provided for manufacturing a magneto-resistive device, comprising the steps of: extracting at least one subset of bars from at least one bar section of a wafer; obtaining a magnetic performance of the at least one subset of the bars; determining an angle based on the magnetic performance; and processing remaining bars from the at least one bar section of the wafer based on the deter…
Who is the assignee on this patent?
Western Digital (Fremont) Llc
What technology area does this patent fall under?
Primary CPC classification G11B5/3166. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).