Command balancing and interleaving for write and reads between front end and back end of solid state drive

US9870157B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9870157-B2
Application numberUS-201514675526-A
CountryUS
Kind codeB2
Filing dateMar 31, 2015
Priority dateMar 31, 2015
Publication dateJan 16, 2018
Grant dateJan 16, 2018

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Abstract

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A data storage device includes a non-volatile semiconductor storage device and a controller that is configured to perform interleaving of small reads with large reads and small writes with large writes. In the example of reads, the controller receives a sequence of read commands including a first read command having a read size larger than a read threshold size and a second read command having a read size smaller than the read threshold size, and issue first and second read requests in succession to read data of a predetermined size less than the read threshold size, from the non-volatile semiconductor storage device. The interleaving is achieved by issuing the first read request to execute the first read command and the second read request to execute the second read command. As a result of this interleaving, the second read command will have a chance to complete earlier than the first read command even though it was received by the controller later in time.

First claim

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We claim: 1. A data storage device comprising: a non-volatile semiconductor storage device; and a controller including a first interface and a second interface configured to: add a sequence of read commands received from a host through the first interface to first and second queues, the read commands including a first read command added to the first queue and having a read size larger than a read threshold size and a second read command added to the second queue and having a read size smaller than the read threshold size, and track completion of the first read command and the second read command by storing first tracking data for the first read command and second tracking data for the second read command, the first tracking data including a first read size, which is equal to the read size of the first read command, and a first cumulative size, and the second tracking data including a second read size, which is equal to the read size of the second read command, and a second cumulative size, issue first and second read requests in succession through the second interface to read data of a predetermined size for reading less than the read threshold size, from the non-volatile semiconductor storage device, upon receiving a read response in response to the issued first read request, update the first tracking data by adding the predetermined size for the reading to the first cumulative size, and remove the first read command from the first queue when the first cumulative size equals the first read size, and upon receiving a read response in response to the issued second read request, update the second tracking data by adding the predetermined size for the reading to the second cumulative size, and remove the second read command from the second queue when the second cumulative size equals the second read size. 2. The data storage device of claim 1 , wherein the first read request partially executes the first read command and one or more additional read requests are issued to fully execute the first read command. 3. The data storage device of claim 2 , wherein the second read request fully executes the second read command. 4. The data storage device of claim 2 , wherein the second read request partially executes the second read command and one or more additional read requests are issued to fully execute the second read command, the total number of read requests issued to fully execute the second read command being less than the total number of read requests issued to fully execute the first read command. 5. The data storage device of claim 1 , wherein the controller is configured to add a sequence of write commands received from the host through the first interface to third and fourth queues, the write commands including a first write command added to the third queue and having a write size larger than a write threshold size and a second write command added to the fourth queue and having a write size smaller than the threshold size, and track completion of the first write command and the second write command by storing third tracking data for the first write command and fourth tracking data for the second write command, the third tracking data including a first write size, which is equal to the write size of the first write command, and a third cumulative size, and the fourth tracking data including a second write size, which is equal to the write size of the second write command, and a fourth cumulative size, issue first and second write requests in succession through the second interface to write data of a predetermined size for writing less than the write threshold size, into the non-volatile semiconductor storage device, upon receiving a write response in response to the issued first write request, update the third tracking data by adding the predetermined size for writing to the third cumulative size, and remove the first write command from the third queue when the third cumulative size equals the first write size, and upon receiving a write response in response to the issued second write request, update the fourth tracking data by adding the predetermined size for writing to the fourth cumulative size, and remove the second write command from the fourth queue when the fourth cumulative size equals the second write size. 6. The data storage device of claim 5 , wherein the first write request partially executes the first write command and one or more additional write requests are issued to fully execute the first write command. 7. The data storage device of claim 6 , wherein the second write request fully executes the second write command. 8. The data storage device of claim 6 , wherein the second write request partially executes the second write command and one or more additional write requests are issued to fully execute the second write command, the total number of write requests issued to fully execute the second write command being less than the total number of write requests issued to fully execute the first write command. 9. The data storage device of claim 5 , wherein the predetermined size for reading is the same as the predetermined size for writing. 10. The data storage device of claim 5 , wherein the predetermined size for reading is different from the predetermined size for writing. 11. In a data storage device having a non-volatile semiconductor storage device and a controller including a first interface and a second interface, a method of issuing read requests through the second interface to read data from the non-volatile semiconductor storage device in response to a sequence of read commands received from a host through the first interface, said method comprising: separating the read commands received from the host into a first read command having a read size larger than the read threshold size and a second read command having a read size smaller than the read threshold size, and storing the first read command in a first queue and the second read command in a second queue; issuing first and second read requests in succession through the second interface to read data of a predetermined size for reading less than the read threshold size, from the non-volatile semiconductor storage device; upon receiving a read response in response to the issued first read request, updating first tracking data for the first read command, the first tracking data including a first read size, which is equal to the read size of the first read command, and a first cumulative size, and removing the first read command from the first queue when the first cumulative size plus the predetermined size for reading equals the first read size; and upon receiving a read response in response to the issued second read request, updating second tracking data for the second read command, the second tracking data including a second read size, which is equal to the read size of the second read command, and a second cumulative size, and removing the second read command from the second queue when the second cumulative size plus the predetermined size for reading equals the second read size. 12. The method of claim 11 , wherein the first read request partially executes the first read command and one or more additional read requests are issued to fully execute the first read command, and the second read request fully executes the second read command. 13. In a data storage device having a non-volatile semiconductor storage device and a controller including a first interface and a second interface, a method of issuing write requests through the second interface to write data into the non-volatile semiconductor storage device in response to a sequence of write commands received from a host throu

Assignees

Inventors

Classifications

  • G06F3/0613Primary

    in relation to throughput · CPC title

  • Command handling arrangements, e.g. command buffers, queues, command scheduling · CPC title

  • Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

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What does patent US9870157B2 cover?
A data storage device includes a non-volatile semiconductor storage device and a controller that is configured to perform interleaving of small reads with large reads and small writes with large writes. In the example of reads, the controller receives a sequence of read commands including a first read command having a read size larger than a read threshold size and a second read command having …
Who is the assignee on this patent?
Toshiba Memory Corp
What technology area does this patent fall under?
Primary CPC classification G06F3/0613. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).