Organic semiconductor element, strain sensor, vibration sensor, and manufacturing method for organic semiconductor element
US-12068093-B2 · Aug 20, 2024 · US
US9869598B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9869598-B1 |
| Application number | US-201615192311-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jun 24, 2016 |
| Priority date | Jun 24, 2016 |
| Publication date | Jan 16, 2018 |
| Grant date | Jan 16, 2018 |
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Disclosed herein are force sensors which include a sense die assembly and methods for manufacturing the sense die assembly and the force sensor. The disclosed sense die assembly, force sensor, and methods utilize wafer-level retention to hold an actuation element in a cavity of the sense die.
Opening claim text (preview).
What is claimed is: 1. A force sensor comprising: a substrate; a sense die having a top side and a bottom side, wherein the sense die includes a cavity formed therein and a diaphragm, and one or more sensing elements positioned on a bottom side of the diaphragm, wherein the bottom side of the sense die is flip chip bonded to the substrate; an actuation element placed in the cavity of the sense die and in contact with a top side of the diaphragm and with a wall of the cavity; and a cover member positioned on the top side of the sense die, wherein the cover member includes an opening positioned over the cavity of the sense die, wherein the actuation element extends through the opening, wherein the cover member holds the actuation element within the cavity. 2. The force sensor of claim 1 , wherein the actuation element is spherical in shape. 3. The force sensor of claim 1 , wherein the actuation element is cylindrical in shape and has a first portion and a second portion, wherein the first portion has a diameter larger than a diameter of the second portion, wherein the diameter of the first portion is larger than the opening in the cover member through which the second portion of the actuation element extends. 4. The force sensor of claim 1 , wherein the cover member is a silicon or silicon oxide layer grown on the top side of the sense die using standard lithography growth patterns. 5. The force sensor of claim 1 , wherein the cover member is formed from a wafer made of silicon, glass, metal, ceramic, or plastic. 6. The force sensor of claim 1 , wherein the sense die has a footprint area in a range of about 2.5 mm 2 to about 25 mm 2 . 7. The force sensor of claim 1 , wherein the cavity has a width of about 0.1 mm. 8. The force sensor of claim 1 , wherein the one or more sensing elements comprises one or more piezoresistive elements located on the bottom side of the diaphragm. 9. The force sensor of claim 1 , wherein a chamber or a space is present between the bottom side of the diaphragm and the substrate. 10. The force sensor of claim 1 , wherein the cavity is cylindrical or cuboid in shape. 11. A sense die assembly comprising: a sense die having a top side and a bottom side, wherein the sense die includes a cavity and a diaphragm formed therein by etching, and one or more sensing elements positioned on a bottom side of the diaphragm; an actuation element placed in the cavity of the sense die and in contact with a top side of the diaphragm and with a wall of the cavity; and a cover member positioned on the top side of the sense die, wherein the cover member includes an opening positioned over the cavity of the sense die, wherein a portion of the actuation element extends through the opening, wherein the cover member provides wafer-level retention of the actuation element in the cavity. 12. The sense die assembly of claim 11 , wherein the cover member is a silicon or silicon oxide layer grown on the top side of the sense die using standard lithography growth patterns. 13. The sense die assembly of claim 11 , wherein the cover member is formed from a wafer made of silicon, glass, metal, ceramic, or plastic. 14. The sense die assembly of claim 11 , wherein the cavity has a width of about 0.1 mm. 15. The sense die assembly of claim 11 , wherein the one or more sensing elements comprises one or more piezoresistive elements located on the bottom side of the diaphragm. 16. The sense die assembly of claim 11 , wherein the cavity is cylindrical or cuboid in shape.
Bonding an individual cap on the substrate · CPC title
Cavities · CPC title
Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00) · CPC title
Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title
bonded on a diaphragm · CPC title
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