Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films

US9868753B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9868753-B2
Application numberUS-201615297191-A
CountryUS
Kind codeB2
Filing dateOct 19, 2016
Priority dateDec 23, 2014
Publication dateJan 16, 2018
Grant dateJan 16, 2018

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Abstract

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Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 and R 10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

First claim

Opening claim text (preview).

We claim: 1. A process for the deposition of a Germanium doped Zirconium oxide film on a substrate, the process comprising the steps of: introducing a vapor of a Germanium- and Zirconium-containing precursor into a reactor having a substrate disposed therein and depositing at least part of the Germanium- and Zirconium-containing precursor onto the substrate and introducing an oxidizing gas into the reactor, the precursor having the following formula: wherein each R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and R 9 is independently selected from the group consisting of H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl group. 2. The process of claim 1 , wherein the Germanium- and Zirconium-containing precursor and the oxidizing gas are introduced into the reactor simultaneously and the reactor is configured for chemical vapor deposition. 3. The process of claim 1 , wherein the Germanium- and Zirconium-containing precursor and the oxidizing gas are introduced into the chamber sequentially and the reactor is configured for atomic layer deposition. 4. The process of claim 3 , wherein the Germanium- and Zirconium-containing precursor is selected from the group consisting of: (trimethylgermyl)cyclopentadienyl tris(Dimethylamino) Zirconium(IV) (Zr(TMG-Cp) (NMe 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(methylamino) Zirconium(IV) (Zr(TMG-Cp)(NHMe) 3 ); (trimethylgermyl)cyclopentadienyl tris(Diethylamino) Zirconium(IV) (Zr(TMG-Cp)(NEt 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(ethylamino) Zirconium(IV) (Zr(TMG-Cp)(NHEt) 3 ); (trimethylgermyl)cyclopentadienyl tris(ethylmethylamino) Zirconium(IV) (Zr(TMG-Cp)(NEtMe) 3 ); (trimethylgermyl)cyclopentadienyl tris(Di n-propylamino) Zirconium(IV) (Zr(TMG-Cp) (NnPr 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(n-propylamino) Zirconium(IV) (Zr(TMG-Cp)(NHnPr) 3 ); (trimethylgermyl)cyclopentadienyl tris(Di isopropylamino) Zirconium(IV) (Zr(TMG-Cp)(NiPr 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(isopropylamino) Zirconium(IV) (Zr(TMG-Cp)(NHiPr) 3 ); (trimethylgermyl)cyclopentadienyl tris(Di n-butylamino) Zirconium(IV) (Zr(TMG-Cp) (NnBu 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(n-butylamino) Zirconium(IV) (Zr(TMG-Cp)(NHnBu) 3 ); (trimethylgermyl)cyclopentadienyl tris(Di isobutylamino) Zirconium(IV) (Zr(TMG-Cp)(NiBu 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(isobutylamino) Zirconium(IV) (Zr(TMG-Cp)(NHiBu) 3 ); (trimethylgermyl)cyclopentadienyl tris(Di sec-butylamino) Zirconium(IV) (Zr(TMG-Cp) (NsBu 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(sec-butylamino) Zirconium(IV) (Zr(TMG-Cp)(NHsBu) 3 ); (trimethylgermyl)cyclopentadienyl tris(Di tert-butylamino) Zirconium(IV) (Zr(TMG-Cp)(NtBu 2 ) 3 ); (trimethylgermyl)cyclopentadienyl tris(tert-butylamino) Zirconium(IV) (Zr(TMG-Cp)(NHtBu) 3 ); (dimethylgermyl)cyclopentadienyl tris(Dimethylamino) Zirconium(IV) (Zr(DMG-Cp)(NMe 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(methylamino) Zirconium(IV) (Zr(DMG-Cp) (NHMe) 3 ); (dimethylgermyl)cyclopentadienyl tris(Diethylamino) Zirconium(IV) (Zr(DMG-Cp)(NEt 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(ethylamino) Zirconium(IV) (Zr(DMG-Cp)(NHEt) 3 ); (dimethylgermyl)cyclopentadienyl tris(ethylmethylamino) Zirconium(IV) (Zr(DMG-Cp)(NEtMe) 3 ); (dimethylgermyl)cyclopentadienyl tris(Di n-propylamino) Zirconium(IV) (Zr(DMG-Cp)(NnPr 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(n-propylamino) Zirconium(IV) (Zr(DMG-Cp)(NHnPr) 3 ); (dimethylgermyl)cyclopentadienyl tris(Di isopropylamino) Zirconium(IV) (Zr(DMG-Cp) (NiPr 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(isopropylamino) Zirconium(IV) (Zr(DMG-Cp)(NHiPr) 3 ); (dimethylgermyl)cyclopentadienyl tris(Di n-butylamino) Zirconium(IV) (Zr(DMG-Cp)(NnBu 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(n-butylamino) Zirconium(IV) (Zr(DMG-Cp)(NHnBu) 3 ); (dimethylgermyl)cyclopentadienyl tris(Di isobutylamino) Zirconium(IV) (Zr(DMG-Cp)(NMe 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(isobutylamino) Zirconium(IV) (Zr(DMG-Cp) (NHiBu) 3 ); (dimethylgermyl)cyclopentadienyl tris(Di sec-butylamino) Zirconium(IV) (Zr(DMG-Cp)(NsBu 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(sec-butylamino) Zirconium(IV) (Zr(DMG-Cp)(NHsBu) 3 ); (dimethylgermyl)cyclopentadienyl tris(Di tert-butylamino) Zirconium(IV) (Zr(DMG-Cp)(NtBu 2 ) 3 ); (dimethylgermyl)cyclopentadienyl tris(tert-butylamino) Zirconium(IV) (Zr(DMG-Cp)(NHtBu) 3 ); (trifluorogermyl)cyclopentadienyl tris(Dimethylamino) Zirconium(IV) (Zr(F 3 Ge-Cp) (NMe 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(methylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHMe) 3 ); (trifluorogermyl)cyclopentadienyl tris(Diethylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NEt 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(ethylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHEt) 3 ); (trifluorogermyl)cyclopentadienyl tris(Ethylmethylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NEtMe) 3 ); (trifluorogermyl)cyclopentadienyl tris(Di n-propylamino) Zirconium(IV) (Zr(F 3 Ge-Cp) (NnPr 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(n-propylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHnPr) 3 ) (trifluorogermyl)cyclopentadienyl tris(Di isopropylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NiPr 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(isopropylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHiPr) 3 ); (trifluorogermyl)cyclopentadienyl tris(Di n-butylamino) Zirconium(IV) (Zr(F 3 Ge-Cp) (NnBu 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(n-butylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHnBu) 3 ); (trifluorogermyl)cyclopentadienyl tris(Di isobutylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NiBu 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(isobutylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHiBu) 3 ); (trifluorogermyl)cyclopentadienyl tris(Di sec-butylamino) Zirconium(IV) (Zr(F 3 Ge-Cp) (NsBu 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(sec-butylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHsBu) 3 ); (trifluorogermyl)cyclopentadienyl tris(Di tert-butylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NtBu 2 ) 3 ); (trifluorogermyl)cyclopentadienyl tris(tert-butylamino) Zirconium(IV) (Zr(F 3 Ge-Cp)(NHtBu) 3 ); (difluorogermyl)cyclopentadienyl tris(Dimethylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NMe 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(methylamino) Zirconium(IV) (Zr(F 2 HGe-Cp) (NHMe) 3 ); (difluorogermyl)cyclopentadienyl tris(Diethylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NEt 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(ethylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NHEt) 3 ); (difluorogermyl)cyclopentadienyl tris(Ethylmethylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NEtMe) 3 ); (difluorogermyl)cyclopentadienyl tris(Di n-propylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NnPr 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(n-propylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NHnPr) 3 ); (difluorogermyl)cyclopentadienyl tris(Di isopropylamino) Zirconium(IV) (Zr(F 2 HGe-Cp) (NiPr 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(isopropylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NHiPr) 3 ); (difluorogermyl)cyclopentadienyl tris(Di n-butylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NnBu 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(n-butylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NHnBu) 3 ); (difluorogermyl)cyclopentadienyl tris(Di isobutylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NiBu 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(isobutylamino) Zirconium(IV) (Zr(F 2 HGe-Cp) (NHiBu) 3 ); (difluorogermyl)cyclopentadienyl tris(Di sec-butylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NsBu 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(sec-butylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NHsBu) 3 ); (difluorogermyl)cyclopentadienyl tris(Di tert-butylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NtBu 2 ) 3 ); (difluorogermyl)cyclopentadienyl tris(tert-butylamino) Zirconium(IV) (Zr(F 2 HGe-Cp)(NHtBu) 3 ); (monofluorogermyl)cyclopentadienyl tris(Dimethyl

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Classifications

  • characterized by the use of precursors specially adapted for ALD · CPC title

  • of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

  • C23C16/405Primary

    of refractory metals or yttrium · CPC title

  • Oxides · CPC title

  • C07F17/00Primary

    Metallocenes · CPC title

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What does patent US9868753B2 cover?
Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 and R 10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the discl…
Who is the assignee on this patent?
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, L'Air Liquide Société Anonyme Our L'Etude Et L'Exploitation Des Procédés Georges Claude
What technology area does this patent fall under?
Primary CPC classification C23C16/405. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).