Top notch slit profile for mems device
US-2024381034-A1 · Nov 14, 2024 · US
US9866970B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9866970-B2 |
| Application number | US-201514853507-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2015 |
| Priority date | Oct 17, 2014 |
| Publication date | Jan 9, 2018 |
| Grant date | Jan 9, 2018 |
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A method of manufacturing a microphone includes preparing a substrate and forming an oxide layer pattern on the substrate and an oxide layer on a rear side of the substrate. The vibration membrane is formed over the substrate by injecting conductive ions into the substrate. A sacrificial layer and a fixed electrode are sequentially formed on the substrate and the vibration membrane by removing the oxide layer pattern. A first photoresist layer pattern is formed on the fixed electrode, and an air inlet is formed by patterning the fixed electrode. A second photoresist layer pattern is formed on a rear side of the oxide layer, and a penetration hole, through which a portion of the vibration membrane is exposed, is formed by etching the oxide layer and the rear side of the substrate. An air layer is formed between the fixed electrode and the vibration membrane.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a microphone, comprising: preparing a substrate and forming an oxide layer pattern on the substrate and an oxide layer on a rear side of the substrate; forming a vibration membrane on the substrate by injecting conductive ions into the substrate using the oxide layer pattern as a mask; sequentially forming a sacrificial layer and a fixed electrode on the substrate and the vibration membrane by removing the oxide layer pattern; forming a first photoresist layer pattern on the fixed electrode and forming an air inlet by patterning the fixed electrode using the first photoresist layer pattern as a mask; forming a second photoresist layer pattern on a rear side of the oxide layer and forming a penetration hole through which a portion of the vibration membrane is exposed by etching a portion of the oxide layer and a portion of the rear side of the substrate; forming an air layer between the fixed electrode and the vibration membrane by removing a portion of the sacrificial layer; and forming a first pad connected to the fixed electrode and a second pad connected to the vibration membrane after the air inlet formed. 2. The method of claim 1 , wherein the step of forming the penetration hole comprises forming a plurality of slots in the vibration membrane. 3. The method of claim 2 , wherein the plurality of slots are formed over the penetration hole. 4. The method of claim 1 , wherein the conductive ions comprise boron ions or phosphorous ions. 5. The method of claim 1 , wherein the forming of the first pad and the second pad comprises: forming a photoresist layer through which a portion of the fixed electrode and the portion of the vibration membrane are exposed on the fixed electrode and the vibration membrane; forming a metal layer on the photoresist layer at the portion of the fixed electrode and at the portion of the vibration membrane; and removing the photoresist layer and the metal layer formed on the photoresist layer. 6. The method of claim 1 , wherein the fixed electrode is made of polysilicon or a metal. 7. The method of claim 1 , wherein the substrate comprises silicon.
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