Image sensor

Patent metadata

Field	Value
Publication number	US-9865635-B2
Application number	US-201715408085-A
Country	US
Kind code	B2
Filing date	Jan 17, 2017
Priority date	Jan 20, 2016
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

First claim

What is claimed is:

1. An image sensor, comprising:
a substrate including an active region defined by a device isolation layer;
a photoelectric conversion layer in the active region;
a well impurity layer in the substrate and above the photoelectric conversion layer;
a floating diffusion region configured to store photocharges generated in the photoelectric conversion layer, wherein the floating diffusion region is in the well impurity layer and is spaced apart from the photoelectric conversion layer; and
a transfer gate comprising a lower portion in the substrate and an upper portion protruding from the lower portion of the transfer gate,
wherein the lower portion of the transfer gate, when viewed in a plan view, comprises a first surface that contacts the device isolation layer and extends in a first direction, and a second surface facing the floating diffusion region, and
wherein, when viewed in the plan view, the second surface of the lower portion of the transfer gate comprises a straight portion that extends in a second direction, and the first direction and the second direction form an angle in a range of about 30° to about 60°.

2. The image sensor of claim 1 , wherein the angle is about 45°.

3. The image sensor of claim 1 , wherein the upper portion of the transfer gate is offset in a third direction toward the floating diffusion region from a center, relative to the third direction, of the lower portion of the transfer gate, and wherein the third direction is perpendicular to the first direction.

4. The image sensor of claim 1 , wherein the upper portion of the transfer gate comprises a first portion in overlap with the lower portion of the transfer gate and a second portion not overlapped with the lower portion of the transfer gate and overlapped with the well impurity layer.

5. The image sensor of claim 1 , wherein, when viewed in the plan view, the lower portion of the transfer gate comprises a rounded corner, and
wherein the transfer gate comprises a gate insulating layer that comprises a first portion extending on the straight portion of the second surface of the lower portion of the transfer gate and a second portion comprising the rounded corner, and the first portion has a first thickness that is less than a second thickness of the second portion.

6. The image sensor of claim 5 , wherein the first thickness is a smallest thickness of the gate insulating layer.

7. The image sensor of claim 1 , wherein the well impurity layer comprises a doped region having a first conductivity type, and
wherein the floating diffusion region comprises a doped region having a second conductivity type different from the first conductivity type.

8. An image sensor, comprising:
a substrate including an active region defined by a device isolation layer, the substrate comprising a silicon substrate;
a photoelectric conversion layer in the active region;
a floating diffusion region in the active region, wherein the floating diffusion region is configured to store photocharges generated in the photoelectric conversion layer and is spaced apart from the photoelectric conversion layer; and
a transfer gate comprising a lower portion in the active region and an upper portion protruding from the lower portion,
wherein, when viewed in a plan view, the lower portion of the transfer gate comprises a surface facing the floating diffusion region, and the surface comprises a straight portion extending in a direction of a (100) crystal plane of the silicon substrate.

9. The image sensor of claim 8 , wherein, when viewed in the plan view, the lower portion of the transfer gate comprises a rounded corner.

10. The image sensor of claim 8 , further comprising a well impurity layer in the active region and between the photoelectric conversion layer and a top surface of the substrate,
wherein the lower portion of the transfer gate is provided in a first portion of the well impurity layer, and
the floating diffusion region is provided in a second portion of the well impurity layer different from the first portion of the well impurity layer.

11. An image sensor, comprising:
a substrate including an active region therein, the active region being defined by a device isolation layer;
a photoelectric conversion layer in the active region;
a well impurity layer in the substrate and on the photoelectric conversion layer;
a floating diffusion region in the well impurity layer, wherein the floating diffusion region is configured to store photocharges generated in the photoelectric conversion layer and is spaced apart from the photoelectric conversion layer; and
a transfer gate comprising a lower portion in the substrate and an upper portion protruding from the lower portion of the transfer gate,
wherein the transfer gate comprises a first surface that contacts the device isolation layer and extends hr a first direction and a second surface that faces the floating diffusion region and extends in a second direction, and the first direction and the second direction form an acute angle, and
wherein, when viewed in a plan view, the upper portion of the transfer gate is offset in a third direction toward the floating diffusion region from a center, relative to the third direction, of the lower portion of the transfer gate, and the third direction is perpendicular to the first direction.

12. The image sensor of claim 11 , wherein the well impurity layer comprises a doped region having a first conductivity type, and wherein the floating diffusion region comprises a doped region having a second conductivity type different from the first conductivity type.

13. The image sensor of claim 11 , wherein a top surface of the upper portion of the transfer gate extends above a top surface of the substrate.

14. The image sensor of claim 11 , wherein, when viewed in the plan view, the lower portion of the transfer gate comprises a rounded corner.

15. The image sensor of claim 14 , wherein the transfer gate comprises a gate insulating layer, and
wherein the gate insulating layer comprises a first portion contacting the floating diffusion region and a second portion comprising the rounded corner, and the first portion has a first thickness that is less than a second thickness of the second portion.

16. The image sensor of claim 15 , wherein the first thickness is a smallest thickness of the gate insulating layer.

17. The image sensor of claim 8 , wherein, when viewed in the plan view, the lower portion of the transfer gate comprises a first surface that contacts the device isolation layer and extends in a first direction,
wherein, when viewed in the plan view, the upper portion of the transfer gate is offset in a second direction toward the floating diffusion region from a center, relative to the second direction, of the lower portion of the transfer gate in the second direction, and the second direction is perpendicular to the first direction.

18. The image sensor of claim 8 , wherein the upper portion of the transfer gate, comprises a portion not overlapping with the lower portion of the transfer gate.

19. The image sensor of claim 9 , wherein the transfer gate comprises a gate insulating layer that comprises a first portion extending on the straight portion of the surface of the lower portion of the transfer gate and a second portion comprising the rounded corner, and the first portion has a first thickness that is less than a second thickness of the second portion.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Donghyuk
• Cha Seungwon
• Kang Cheolju
• Kim Yitae
• Park Jongeun
• Ahn Jungchak
• Choi Yujung

Classifications

• H01L27/1464

  Electricity · mapped topic

• H01L27/14621

  Electricity · mapped topic

• H01L27/14627

  Electricity · mapped topic

• H01L27/14614 Primary

  Electricity · mapped topic

• H10F39/8063

  Microlenses · CPC title