Nanocrystalline diamond carbon film for 3D NAND hardmask application

Patent metadata

Field	Value
Publication number	US-9865464-B2
Application number	US-201615348170-A
Country	US
Kind code	B2
Filing date	Nov 10, 2016
Priority date	Sep 3, 2014
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

First claim

What is claimed is:

1. A method for etching a device layer, the method comprising:
depositing a nanocrystalline diamond layer on a device layer, wherein the nanocrystalline diamond layer is in contact with the device layer;
patterning and etching the nanocrystalline diamond layer;
etching the device layer to form a channel, wherein the channel is formed in the device layer and in the nanocrystalline diamond layer; and
removing the nanocrystalline diamond layer.

2. The method of claim 1 , wherein etching the device layer comprises:
etching an electrically insulating material.

3. The method of claim 2 , wherein the device layer comprises silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof.

4. The method of claim 1 , wherein etching the device layer comprises:
etching a metal or a metal alloy.

5. The method of claim 4 , wherein the device layer comprises titanium, platinum, ruthenium, titanium nitride, hafnium nitride, tantalum nitride, zirconium nitride, or a metal silicide.

6. The method of claim 1 , wherein the device layer comprises a semiconductor floating gate, conductive nanoparticles, or a discrete charge storage dielectric feature.

7. The method of claim 1 further comprising:
filling the channel to form a feature, wherein with feature has an aspect ratio of greater than 50:1.

8. The method of claim 1 further comprising:
forming a seed layer prior to depositing the nanocrystalline diamond layer.

9. A method for etching a device layer, the method comprising:
depositing a device layer on a processing surface of a substrate, wherein the device layer is in contact with the processing surface;
depositing a nanocrystalline diamond layer on the device layer, wherein the nanocrystalline diamond layer is in contact with the device layer, and the nanocrystalline diamond layer having an average grain size of less than 6 nm;
forming an etch mask from the nanocrystalline diamond layer;
etching the device layer through the etch mask to form a channel; and
ashing the nanocrystalline diamond layer.

10. The method of claim 9 further comprising:
filling the channel to form a feature having an aspect ratio of greater than 50:1.

11. The method of claim 9 , wherein the substrate is maintained at a temperature between about 500 degrees Celsius and about 650 degrees Celsius during depositing the nanocrystalline diamond layer.

12. The method of claim 9 further comprising:
forming a seed layer prior to depositing the nanocrystalline diamond layer.

13. A method for etching a device layer, the method comprising:
depositing a plurality of device layers on a substrate, wherein the plurality of device layers further comprise a first device layer deposited on a processing surface of a substrate, and the first device layer is in contact with the processing surface;
depositing a nanocrystalline diamond layer on the plurality of device layers, wherein the nanocrystalline diamond layer is in contact with the plurality of device layers;
patterning and etching the nanocrystalline diamond layer to form an etch mask;
etching the plurality of device layers through the etch mask to form a channel, wherein the channel is formed in the plurality of device layers and in the nanocrystalline diamond layer; and
removing the nanocrystalline diamond layer.

14. The method of claim 13 , wherein etching the plurality of device layers comprises:
etching an electrically insulating material.

15. The method of claim 14 , wherein etching the plurality of device layers comprises:
etching silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof.

16. The method of claim 13 , wherein etching the plurality of device layers comprises:
etching a metal or a metal alloy.

17. The method of claim 16 , wherein etching the plurality of device layers comprises:
etching titanium, platinum, ruthenium, titanium nitride, hafnium nitride, tantalum nitride, zirconium nitride, titanium silicide, nickel silicide, cobalt silicide, or a combination thereof.

18. The method of claim 13 further comprising:
filling the channel to form a feature having an aspect ratio of greater than 50:1.

19. The method of claim 13 , wherein the substrate is maintained at a temperature between about 500 degrees Celsius and about 650 degrees Celsius during depositing the nanocrystalline diamond layer.

20. The method of claim 13 further comprising:
forming a seed layer prior to depositing the nanocrystalline diamond layer.

Assignees

• Applied Materials Inc

Inventors

• Chen Yongmei
• Ngai Christopher S
• Liu Jingjing
• Xue Jun
• Ying Chentsau
• Godet Ludovic

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title