Process for producing structured coatings

Patent metadata

Field	Value
Publication number	US-9865461-B2
Application number	US-201414899435-A
Country	US
Kind code	B2
Filing date	Jun 6, 2014
Priority date	Jun 18, 2013
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

First claim

The invention claimed is:

1. A liquid-phase process for producing a structured silicon- and/or germanium-containing coating, comprising:
a) applying at least one coating composition to a substrate, to obtain a coated substrate,
b) partially activating the resulting coating on the coated substrate, and
c) oxidizing a non-activated coating on the substrate,
wherein the coating composition has at least two precursors, of which at least one is a hydridosilane oligomer and at least one is a hydridosilane of the generic formula Si n H 2n+2 with n=3 to 10,
wherein the hydridosilane oligomer is obtainable by thermal reaction of a composition comprising at least one non-cyclic hydridosilane having not more than 20 silicon atoms in the absence of a catalyst at temperatures of less than 235° C.;
wherein the partially activating of the resulting coating in b) refers to a transformation of the deposited precursors of the resulting coating into an amorphous or a crystalline semiconductor coating.

2. The process according to claim 1 , wherein the coating composition comprises at least one solvent and at least one silicon- and/or germanium-containing precursor which is solid or liquid under SATP conditions at 25° C. and 1.013 bar.

3. The process according to claim 1 , wherein one precursor has the generic formula M n X c with M=Si and/or Ge, X=H, F, Cl, Br, I, C 1 -C 10 alkyl, C 1 -C 10 alkenyl, C 5 -C 20 aryl, n≧4 and 2n≦c≦2n+2.

4. The process according to claim 2 , wherein the at least one silicon- and/or germanium-containing precursor is a silicon- and/or germanium-containing nanoparticle.

5. The process according to claim 1 , wherein the hydridosilane of the formula Si n H 2n+2 is branched.

6. The process according to claim 5 , wherein the hydridosilane is isotetrasilane, 2-silyltetrasilane, neopentasilane or a mixture of nonasilane isomers.

7. The process according to claim 1 , wherein the hydridosilane oligomer has a weight-average molecular weight of 200 to 10,000 g/mol.

8. The process according to claim 1 , wherein the hydridosilane oligomer has been obtained by oligomerization of non-cyclic hydridosilanes.

9. The process according to claim 1 , wherein the coating composition is applied in structured form to the substrate.

10. The process according to claim 9 , wherein at least two different coating compositions are applied in structured form, simultaneously or successively and also with or without overlap, to different regions of a substrate.

11. The process according to claim 1 , wherein the oxidizing takes place in an oxygen-containing atmosphere at a temperature≦300° C.

12. The process according to claim 1 , wherein the oxidizing is carried out with an oxidizing agent selected from the group consisting of ozone, carbon dioxide, hydrogen peroxide (H 2 O 2 ), steam (H 2 O), a mono- or polyhydric alcohol, a ketone, a carboxylic acid, a carbonic ester and mixtures comprising trichloroacetic acid and oxygen, and also HCl and oxygen.

Assignees

• Mader Christoph
• Woebkenberg Paul Henrich
• Erz Joachim
• Traut Stephan
• Patz Matthias
• Coelle Michael
• Wieber Stephan
• Stenner Patrik
• Klatt Janette
• Wunnicke Odo
• Evonik Degussa Gmbh

Inventors

• Mader Christoph
• Woebkenberg Paul Henrich
• Erz Joachim
• Traut Stephan
• Patz Matthias
• Coelle Michael
• Wieber Stephan
• Stenner Patrik
• Klatt Janette
• Wunnicke Odo

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/265 Primary

  using solutions · CPC title

• H01L21/02628 Primary

  Electricity · mapped topic

• H01L21/02532

  Electricity · mapped topic

• C23C18/1204 Primary

  inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds · CPC title