Ion implantation with charge and direction control

Patent metadata

Field	Value
Publication number	US-9865429-B2
Application number	US-201414541314-A
Country	US
Kind code	B2
Filing date	Nov 14, 2014
Priority date	Dec 1, 2011
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

First claim

What is claimed is:

1. A device comprising:
an emitter including a first electrode disposed on a dielectric layer and a second electrode disposed on the dielectric layer, such that a gap exists between the first electrode and the second electrode;
a first conductive structure having a first open central region and disposed above the emitter, such that an electron emitted from the gap when a voltage is applied to the first electrode and the second electrode passes through the fir…

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hwang Chih-Hong
• Chang Chun-Lin
• Cheng Nai-Han
• Yang Chi-Ming
• Lin Chin-Hsiang

Classifications

• H01J2237/31705

  Electricity · mapped topic

• H01J2237/0041

  Electricity · mapped topic

• H01J37/06

  Electricity · mapped topic

• H01J37/026

  Electricity · mapped topic

• H01J3/26

  Electricity · mapped topic