Device for generating a modulation of an optical signal comprising electro-absorption modulators

Patent metadata

Field	Value
Publication number	US-9864254-B2
Application number	US-201214439375-A
Country	US
Kind code	B2
Filing date	Oct 31, 2012
Priority date	Oct 31, 2012
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

A device for generating a modulation of an optical signal is provided which has a first electro-absorption modulator including a first P-doped semi-conductor area, a first N-doped semi-conductor area, and a first active portion, along with a second electro-absorption modulator including a second P-doped semi-conductor area in electric contact with the first N-doped semi-conductor area, a second N-doped semi-conductor area, and a second active portion, and a connector for introducing electric modulation. In the device, the connector for introducing electric modulation is in contact with the first N-doped semi-conductor area and the second P-doped semi-conductor area.

First claim

The invention claimed is:

1. A device for generating a modulation of an optical signal comprising:
a first electro-absorption modulator comprising:
a first P-doped semi-conductor area,
a first N-doped semi-conductor area, and
a first active portion connecting both first semi-conductor areas,

a second electro-absorption modulator comprising:
a second P-doped semi-conductor area in electric contact with the first N-doped semi-conductor area,
a second N-doped semi-conductor area, and
a second active portion connecting both second semi-conductor areas, and

a connector for introducing electric modulation,
wherein the connector for introducing electric modulation is in contact with the first N-doped semi-conductor area and the second P-doped semi-conductor area,
wherein the first electro-absorption modulator comprises a first connector, the first P-doped semi-conductor area being connected to the first connector,
wherein the second electro-absorption modulator comprises a second connector, the second N-doped semi-conductor area being connected to a first end of the second connector, and
wherein the device for generating a modulation further includes a DC voltage source connected to the first connector, and wherein a second end of the second connector is connected only to ground.

2. The device for generating a modulation according to claim 1 , wherein the device for generating a modulation includes a modulated voltage generator connected to the connector for introducing an electric modulation, the modulated voltage generator being adapted for applying a periodic sinusoidal or squarewave modulation.

3. The device for generating a modulation according to claim 1 , wherein the device for generating a modulation) comprises a load, the load being connected to an electric ground of the device for generating a modulation and to the connector for introducing electric modulation.

4. The device for generating a modulation according to claim 3 , wherein the load is a resistor or a resistor in series with a capacitor.

5. An optical circuit including:
at least one device for generating a modulation of an optical signal according to claim 1 , and
a light source able to inject light into the device(s) for generating a modulation.

6. The optical circuit according to claim 5 , wherein the light source is a distributed feedback laser.

7. A method for manufacturing the optical circuit according to claim 5 , the method comprising the steps of:
making semi-conductor areas of the device for generating a modulation,
making semi-conductor areas of the light source,
making at most six electric connections between the semi-conductor areas of the device for generating a modulation and the semi-conductor areas of the light source.

8. The method according to claim 7 , wherein the electric connections are metal contacts.

9. A method for generating a modulation of an optical signal comprising using the device according to claim 1 .

10. The method according to claim 9 , wherein the modulation is a binary phase shift modulation.

11. A method for manufacturing the optical circuit according to claim 6 , the method comprising the steps of:
making semi-conductor areas of the device for generating a modulation,
making semi-conductor areas of the light source,
making at most six electric connections between the semi-conductor areas of the device for generating a modulation and the semi-conductor areas of the light source.

12. The method according to claim 11 , wherein the electric connections are metal contacts.

13. A device for generating a modulation of an optical signal according to claim 1 of an optical circuit wherein the second connector is connected only to ground for producing vectorial modulation.

Assignees

• Commissariat L Energie Atomique Et Aux Energies Alternatives
• Commissariat á l'énergie atomique et aux énergies alternatives

Inventors

• Kazmierski Christophe
• Carrara David

Classifications

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/225

  in an optical waveguide structure · CPC title

• G02F2001/0155

  Physics · mapped topic

• G02F1/015

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• G02F2001/212

  Physics · mapped topic