Homogeneous precursor formation method and device thereof

Patent metadata

Field	Value
Publication number	US-9862844-B2
Application number	US-201615219450-A
Country	US
Kind code	B2
Filing date	Jul 26, 2016
Priority date	Aug 12, 2014
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

First claim

The invention claimed is:

1. A method of dissolving copper (I) sulfide (Cu 2 S), copper (II) sulfide (CuS), copper (I) selenide (Cu 2 Se), and/or copper (II) selenide (CuSe), comprising contacting Cu 2 S, CuS, Cu 2 Se and/or CuSe with a mixture of amine and dithiol to form a homogeneous solution.

2. The method of claim 1 , wherein the amine is at least one of a primary, secondary, tertiary amine, diamine, and triamine, and wherein the amine carbon chain ranges from C2 to C24.

3. The method of claim 1 , wherein the amine is a primary amine, the amine carbon chain ranges from C2 to C24.

4. The method of claim 1 , wherein the dithiol has the structure of HS-R6-SH, and wherein R6 represents at least one of an alkyl and aryl group.

5. A method of dissolving tin (II) sulfide (SnS), comprising contacting SnS with a mixture of amine and dithiol.

6. The method of claim 5 , wherein the amine is at least one of a primary, secondary, tertiary amine, diamine, and a triamine, and wherein the amine carbon chain ranges from C2 to C24.

7. The method of claim 5 , wherein the amine is a primary amine, and wherein the primary amine's carbon chain ranges from C2 to C24.

8. The method of claim 5 , wherein the dithiol has the structure of HS-R6-SH, and R6 represents at least one of any alkyl and any aryl group.

9. A method of dissolving at least one of Cu, Zn, and Sn, comprising contacting an elemental metal Cu, Zn, and/or Sn with a mixture of at least one primary amine and at least one dithiol to form a homogeneous solution.

10. The method of claim 9 , wherein the at least one primary amine is a primary amine with carbon chain ranges from C2 to C24.

11. The method of claim 9 , wherein the dithiol has the structure of HS-R6-SH, and R6 represents an alkyl and/or aryl group.

12. A method of dissolving metal oxides, comprising contacting a metal oxide with a mixture of amine and thiol to form a homogeneous solution.

13. The method of claim 12 , wherein the metal oxide comprises copper oxide, zinc oxide, tin oxide, germanium oxide, and indium oxide; in this mixture of amine and thiol.

14. The method of claim 12 , wherein the amine is a primary, secondary, tertiary amine, and/or polyamine, and the amine carbon chain ranges from C2 to C24.

15. The method of claim 12 , wherein the thiol has the structure of R5-SH and/or HS-R6-SH; R5 represents an alkane, alkene, alkyne, alcohol, or other non-carboxylic acid functional group that connects to the sulfur of the thiol group, and R6 represents an alky and/or aryl.

Assignees

• Purdue Research Foundation

Inventors

• Agrawal Rakesh
• Zhang Ruihong
• Walker Bryce Chryst
• Handwerker Carol

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3431

  Selenides · CPC title

• H10P14/3428

  Sulfides · CPC title

• H10P14/265

  using solutions · CPC title