Poly(thioaminal) probe based lithography

Patent metadata

Field	Value
Publication number	US-9862802-B2
Application number	US-201514954398-A
Country	US
Kind code	B2
Filing date	Nov 30, 2015
Priority date	Nov 30, 2015
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

Methods and materials for patterning a substrate are disclosed herein. A poly(thioaminal) material may be utilized as a thermal resist material for patterning substrates in a thermal scanning probe lithography process. The poly(thioaminal) material may be functionalized with an electron withdrawing group and various monomers may be volatilized upon exposure to a thermal scanning probe.

First claim

What is claimed is:

1. A thermal resist material, comprising:
a poly(thioaminal) thermal resist material having a CH 2 —N(R′)—CH 2 —S—R—S repeating group wherein each instance of R is independently selected from the group consisting of alkyl, aryl, and oligomer, and wherein R′ is an electron withdrawing group selected from the group consisting of CnF n+1 , CnF n−1 , C 6 H 4 X, and heterocyclyl thereof, and wherein X is selected from the group consisting of Cl, CF 3 , and F.

2. The material of claim 1 , wherein each instance of R is selected to tune a glass transition temperature of the poly(thioaminal) thermal resist material.

3. The material of claim 1 , wherein R is a functional group selected from the group consisting of alkyl, aryl, ether, siloxane, styrene, carbonate, lactide, methacrylate, acrylate, polyolefin, polyester, polyamide, polyamino, and combinations thereof.

4. The material of claim 1 , wherein each instance of R includes a hydroxyl substituent.

5. The material of claim 1 , wherein each instance of R is selected so the poly(thioaminal) thermal resist material has a softening point between about 40° C. and about 50° C.

6. The material of claim 1 , wherein each instance of R is

wherein each W is independently hydrogen or an electron withdrawing group, and Z is selected from the group consisting of CH 2 and C(CF 3 ) 2 .

7. A thermal resist material, comprising:
a poly(thioaminal) thermal resist material having an S—C—NH—R—NH—C repeating group, wherein each instance of R is a functional group selected from the group consisting of siloxane, styrene, carbonate, lactide, methacrylate, acrylate, polyamide, polyamino,

and combinations thereof, wherein each W is independently hydrogen or an electron withdrawing group, and Z is selected from the group consisting of CH 2 and C(CF 3 ) 2 .

8. The material of claim 7 , wherein each instance of R includes a hydroxyl substituent.

9. The material of claim 7 , wherein each instance of R is selected so the poly(thioaminal) thermal resist material has a softening point between about 40° C. and about 50° C.

Assignees

• IBM

Inventors

• Boday Dylan J
• Garcia Jeannette M
• Hedrick James L
• Wojtecki Rudy J

Classifications

• C08G75/10

  from sulfur or sulfur-containing compounds and aldehydes or ketones · CPC title

• C08G75/04

  from mercapto compounds or metallic derivatives thereof (C08G75/0204 takes precedence) · CPC title

• C08G73/0253

  Polyamines containing sulfur in the main chain · CPC title

• C08G16/0237

  containing sulfur · CPC title

• C08G16/02

  of aldehydes · CPC title