BAW-filter operating using bulk acoustic waves and passive components forming a balun

Patent metadata

Field	Value
Publication number	US-9859868-B2
Application number	US-201214115328-A
Country	US
Kind code	B2
Filing date	May 2, 2012
Priority date	May 4, 2011
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

The present invention relates to a BAW filter operating with bulk acoustic waves, which has a multilayer construction, wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance (L 1 , L 2 , L 3 ) and at least one capacitance (C 1 , C 2 ) which are formed from structured functional layers of the BAW resonator. Furthermore, the invention relates to a method for producing the BAW filter.

First claim

What is claimed is:

1. A bulk acoustic wave (BAW) filter, comprising:
a multilayer construction,
wherein functional layers of a single BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and
wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance and at least one capacitance which are formed from structured functional layers of the single BAW resonator, and wherein structured metal layers which form the inductance and structured metal layers which form the capacitance are arranged at least partly one above another.

2. The BAW filter according to claim 1 , wherein the functional layers of the single BAW resonator comprise an acoustic mirror, a first electrode a piezoelectric layer, a second electrode and a trimming layer.

3. The BAW filter according to claim 2 , wherein the inductance is formed by one or a plurality of metal layers of the acoustic mirror and/or a metal layer of the first electrode and/or a metal layer of the second electrode.

4. The BAW filter according to one of claims 1 to 3 , wherein the inductance is formed by a spiral metallization which is structured from a metallic functional layer of the BAW filter.

5. The BAW filter according to claim 2 , further comprising:
structurally identical BAW resonators except that they differ in thickness of the trimming layer, wherein the thickness of the trimming layer of one of the BAW resonators is chosen in such a way that the BAW resonator acts as a capacitance.

6. The BAW filter according to claim 2 , wherein the capacitance is formed by structured metal layers in two different layers from the following layers, one or a plurality of metal layers of the acoustic mirror, a metal layer of the first electrode and a metal layer of the second electrode.

7. The BAW filter according to claim 1 , wherein the capacitance is formed by two structured metal layers which are arranged in two different layers of the multilayer construction and which overlap one another in the multilayer construction.

8. A duplexer, wherein a BAW filter according to claim 1 and a further filter operating with acoustic waves are arranged on a common chip.

9. The BAW filter according to claim 1 , wherein the balun connects an unbalanced input to two output ports of a balanced output, wherein the balun has a first signal path which connects the unbalanced input to the first balanced output port via a first inductance, a first node, a second inductance and a second node, a second signal path which connects the second node to the second balanced output port via a first capacitance, a third inductance and a third node, and a third signal path which connects the first node to the third node via a second capacitance.

10. The BAW filter according to claim 1 , wherein the balun and the single BAW resonator are arranged alongside one another.

11. A method for producing a bulk acoustic wave (BAW) filter, comprising:
applying a multilayer construction on a substrate,
wherein functional layers of a single BAW resonator are successively applied and structured, and
wherein layers of the multilayer construction are structured in such a way that they form an interconnection of passive components, which forms a balun having at least one inductance and at least one capacitance which are formed from structured functional layers of the single BAW resonator, wherein structured metal layers which form the inductance and structured metal layers which form the capacitance are arranged at least partly one above another.

12. The method according to claim 11 , wherein structured metal layers which form the inductance and/or the capacitance are produced by photolithographic patterning.

13. The method according to claim 11 or 12 , wherein an acoustic mirror, a first electrode, a piezoelectric layer, a second electrode and a trimming layer are applied successively on the substrate.

14. The method according to claim 11 , wherein the single BAW resonator and the balun are structured temporally in parallel.

15. A BAW filter with bulk acoustic waves, comprising:
a multilayer construction,
wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction,
wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance and at least one capacitance which are formed from structured functional layers of the BAW resonator, and
wherein structured metal layers which form the inductance and structured metal layers which form the capacitance are arranged at least partly one above another.

16. A bulk acoustic wave (BAW) filter, comprising:
a multilayer construction,
wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and
wherein an interconnection of passive components is furthermore formed by multilayer construction, said interconnection forming a balun,
wherein the balun has at least one inductance and at least one capacitance which are formed from structured functional layers of the BAW resonator,
wherein the balun connects an unbalanced input to two output ports of a balanced output, and
wherein the balun has a first signal path which connects the unbalanced input to the first balanced output port via a first inductance, a first node, a second inductance and a second node, a second signal path which connects the second node to the second balanced output port via a first capacitance, a third inductance and a third node, and a third signal path which connects the first node to the third node via a second capacitance.

Assignees

• Maurer Gerhard
• Snaptrack Inc

Inventors

• Maurer Gerhard

Classifications

• H03H9/0542

  consisting of a lateral arrangement (H03H9/0566 takes precedence) · CPC title

• H03H2003/025

  the resonators or networks comprising an acoustic mirror · CPC title

• H03H9/706

  Duplexers · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/0571

  including bulk acoustic wave [BAW] devices · CPC title