RF power amplifier splitter

Patent metadata

Field	Value
Publication number	US-9859852-B2
Application number	US-201314034136-A
Country	US
Kind code	B2
Filing date	Sep 23, 2013
Priority date	Sep 23, 2012
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

First claim

We claim:

1. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
a semiconductor substrate for supporting a plurality of layers of an integrated circuit;
a plurality of secondary windings configured in a 2D grid pattern wherein each secondary winding is adjacent two other secondary windings;
a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and
wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings.

2. The integrated circuit RF power amplifier splitter according to claim 1 , wherein said primary winding and said plurality of secondary windings are rectangular in shape.

3. The integrated circuit RF power amplifier splitter according to claim 1 , wherein said primary winding and said plurality of secondary windings are hexagonal in shape.

4. The integrated circuit RF power amplifier splitter according to claim 1 , wherein said primary winding and said plurality of secondary windings are octagonal in shape.

5. The integrated circuit RF power amplifier splitter according to claim 1 , wherein the number of secondary windings is four.

6. The integrated circuit RF power amplifier splitter according to claim 1 , wherein the inductance of each secondary winding is configured such that its impedance matches the input impedance of a subsequent sub-amplifier stage.

7. The integrated circuit RF power amplifier splitter according to claim 1 , wherein said splitter is fabricated using a semiconductor technology selected from the group consisting of complementary metal oxide semiconductor (CMOS), Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Gallium Nitride (GaN).

8. The integrated circuit RF power amplifier splitter according to claim 1 , wherein said splitter is adapted to transmit signals conforming to a wireless standard selected from the group consisting of 802.11 WLAN, LTE, WiMAX, HDTV, 3G cellular, 4G cellular and DECT.

9. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
a semiconductor substrate for supporting a plurality of layers of an integrated circuit;
a plurality of secondary windings configured in a linear array pattern;
a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and
wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings.

10. The integrated circuit RF power amplifier splitter according to claim 9 , wherein said primary winding and said plurality of secondary windings are rectangular in shape.

11. The integrated circuit RF power amplifier splitter according to claim 9 , wherein said primary winding and said plurality of secondary windings are hexagonal in shape.

12. The integrated circuit RF power amplifier splitter according to claim 9 , wherein said primary winding and said plurality of secondary windings are octagonal in shape.

13. The integrated circuit RF power amplifier splitter according to claim 9 , wherein the number of secondary windings is four.

14. The integrated circuit RF power amplifier splitter according to claim 9 , wherein the inductance of each secondary winding is configured such that its impedance matches the input impedance of a subsequent sub-amplifier stage.

15. The integrated circuit RF power amplifier splitter according to claim 9 , wherein the primary winding snakes around said secondary windings in figure eight fashion.

16. The integrated circuit RF power amplifier splitter according to claim 9 , wherein all inner secondary windings other than the outer two on either end of the linear array have an extended length and thus increased inductance thereby compensating for phase mismatch between the secondary windings.

17. The integrated circuit RF power amplifier splitter according to claim 9 , wherein said splitter is fabricated using a semiconductor technology selected from the group consisting of complementary metal oxide semiconductor (CMOS), Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Gallium Nitride (GaN).

18. The integrated circuit RF power amplifier splitter according to claim 9 , wherein said splitter is adapted to transmit signals conforming to a wireless standard selected from the group consisting of 802.11 WLAN, LTE, WiMAX, HDTV, 3G cellular, 4G cellular and DECT.

19. The integrated circuit RF power amplifier splitter according to claim 1 , wherein the routing of the primary winding around said plurality of secondary windings is adapted to maximize power coupling and impedance transformation from said primary winding to said secondary windings.

20. The integrated circuit RF power amplifier splitter according to claim 9 , wherein the routing of the primary winding around said plurality of secondary windings is adapted to maximize power coupling and impedance transformation from said primary winding to said secondary windings.

21. An integrated circuit radio frequency (RF) power amplifier splitter, comprising:
a semiconductor substrate for supporting a plurality of layers of an integrated circuit;
a plurality of secondary windings configured in a linear array pattern;
a primary winding that is routed around said plurality of secondary windings and is magnetically coupled to said plurality of secondary windings; and
wherein an RF input signal applied to said primary winding is split into a plurality of differential RF output signals at the terminals of said secondary windings.

22. The integrated circuit RF power amplifier splitter according to claim 1 , wherein the 2D grid pattern comprises rows of secondary windings and columns of secondary windings.

23. The integrated circuit RF power amplifier splitter according to claim 1 , wherein a length of a given secondary winding of the plurality of secondary windings exceeds (a) a distance between the given secondary winding and an adjacent secondary winding that belongs to a same row as the given secondary winding, and (b) a distance between the given secondary winding and an adjacent secondary winding that belongs to a same column as the given secondary winding.

24. The integrated circuit RF power amplifier splitter according to claim 1 , wherein a half of a length of a given secondary winding of the plurality of secondary windings exceeds (a) a distance between the given secondary winding and an adjacent secondary winding that belongs to a same row as the given secondary winding, and (b) a distance between the given secondary winding and an adjacent secondary winding that belongs to a same column as the given secondary winding.

Assignees

• Dsp Group Ltd
• Dsp Group Ltd

Inventors

• Anderson Sergey
• Mostov Alexander
• Schwartz Eli

Classifications

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W44/241

  for passive devices or passive elements · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/206

  Wires · CPC title

• H10W44/501

  Inductive arrangements (H10W44/20 takes precedence) · CPC title