Luminescent diode, method for manufacturing the luminescent diode and wavelength tunable external cavity laser using the luminescent diode

Patent metadata

Field	Value
Publication number	US-9859682-B2
Application number	US-201615159853-A
Country	US
Kind code	B2
Filing date	May 20, 2016
Priority date	Aug 11, 2015
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics.

First claim

What is claimed is:

1. A method for manufacturing a luminescent diode having an active region and a tapered region, the method comprising:
forming an epitaxial layer by sequentially stacking, on a substrate, an n-type passive waveguide, an n-type clad layer, an active layer, and a p-type cap layer;
etching a portion of the active layer disposed in the active region within the epitaxial layer, and forming a tapered active layer having a tapered shape along the length direction of the active layer disposed in the tapered region, the tapered active layer extending from the active layer;
forming a planar buried heterostructure (PBH) by forming a pnp current blocking layer burying a tapered layer in the tapered region; and
forming a ridge waveguide on the active layer in the active region and the tapered region, wherein
the ridge waveguide has a reverse mesa structure with a width less than a width of the active layer in the active region.

2. The method of claim 1 , wherein the forming of the tapered active layer includes forming the width of the tapered layer to become narrower as it becomes more distant from the active region.

3. The method of claim 1 , wherein the forming of the tapered active layer includes etching the n-type passive waveguide in a region except the active region.

4. The method of claim 1 , wherein the forming of the PBH includes:
forming a passive waveguide core by etching the n-type passive waveguide under the tapered layer in the tapered region, wherein the passive waveguide core covers the width of the tapered layer and overlaps with the tapered layer; and
forming the pnp current blocking layer burying the active layer and the tapered layer in the active region and the tapered region.

5. The method of claim 4 , wherein the forming of the pnp current blocking layer includes forming a top surface of the pnp current block layer in the active region to be flat with respect to that of the active layer,
wherein a top surface of the pnp current blocking layer in the tapered region is formed to be inclined at a predetermined angle with respect to that of the tapered surface.

6. The method of claim 1 , wherein the forming of the ridge waveguide includes:
sequentially stacking an etch stop layer, a p-type clad layer, and a p-type ohmic layer over a top surface of the epitaxial layer on which the pnp current blocking layer is formed;
forming the ridge waveguide overlapping with the active layer and the tapered layer by selectively etching the p-type clad layer and the p-type ohmic layer; and
forming a p-type metal layer over the ridge waveguide and forming an n-type metal layer under the substrate including the epitaxial layer.

7. The method of claim 6 , wherein the forming of the ridge waveguide overlapping with the active layer and the tapered layer by selectively etching the p-type clad layer and the p-type ohmic layer includes forming the ridge waveguide in the active region to have the reverse mesa structure in which the width of its section is narrowed as it comes close to its lower portion from its upper portion, and forming the ridge waveguide in the tapered region to have a forward mesa structure in which the width of its section is the same from its upper portion to its lower portion.

8. The method of claim 7 , wherein the forming of the ridge waveguide overlapping with the active layer and the tapered layer by selectively etching the p-type clad layer and the p-type ohmic layer includes forming the ridge waveguide such that the width of ridge waveguide in the active region is narrower than that of the ridge waveguide in the tapered region, the width of ridge waveguide is narrower than that of the active layer in the active region, and the width of ridge waveguide is wider than that of the tapered layer in the tapered region.

9. A luminescent diode having an active region and a tapered region, the luminescent diode comprising:
a substrate;
an active layer formed to have a predetermined width and a predetermined length in the active region on the substrate;
a tapered layer having a tapered shape along the length direction of the active layer disposed in the tapered region on the substrate, the tapered layer being formed of the same material as the active layer to extend from the active layer;
a pnp current blocking layer formed over the substrate, the pnp current blocking layer forming a PBH by burying the tapered layer; and
a ridge waveguide formed on the active layer, the tapered layer, and the pnp current blocking layer, the ridge waveguide being formed to overlap with the active layer and the tapered layer, wherein
the ridge waveguide has a reverse mesa structure with a width less than a width of the active layer in the active region.

10. The luminescent diode of claim 9 , wherein the tapered layer is formed to be inclined at an angle of 5 to 15 degrees with respect to the length direction of the active layer.

11. The luminescent diode of claim 9 , wherein the tapered layer is formed to become narrower as it becomes more distant from the active region.

12. The luminescent diode of claim 9 , further comprising a passive waveguide core formed between the tapered layer and the substrate, the passive waveguide core overlapping with the tapered layer while covering the width of the tapered layer.

13. The luminescent diode of claim 9 , wherein the pnp current blocking layer is formed to burry not only the tapered layer but also the active layer, and is formed to be flat with respect to a top surface of the active layer in the active region,
wherein the pnp current blocking layer is formed to be inclined at a predetermined angle with respect to a top surface of the tapered layer in the tapered region.

14. The luminescent diode of claim 9 , wherein the ridge waveguide is formed in the active region to have the reverse mesa structure in which the width of its section is narrowed as it comes close to its lower portion from its upper portion, and is formed in the tapered region to have a forward mesa structure in which the width of its section is the same from its upper portion to its lower portion.

15. The luminescent diode of claim 14 , wherein the ridge waveguide is formed such that the width of ridge waveguide in the active region is narrower than that of the ridge waveguide in the tapered region, the width of ridge waveguide is narrower than that of the active layer in the active region, and the width of ridge waveguide is wider than that of the tapered layer in the tapered region.

16. The luminescent diode of claim 9 , wherein the luminescent diode is a superluminescent diode (SLD).

17. A wavelength tunable external cavity laser comprising:
a luminescent diode; and
a reflector disposed adjacent to an output stage of the luminescent diode, at which an end of the tapered layer is disposed, to generate a laser beam by oscillating light emitted from the output stage of the luminescent diode,
wherein the luminescent comprises:
a substrate;
an active layer formed to have a predetermined width and a predetermined length in the active region on the substrate;
a tapered layer having a tapered shape along the length direction of the active layer disposed in the tapered region on the substrate, the tapered active layer formed of the same material as the active layer to extend from the active layer;
a pnp current blocking layer formed over the substrate, the pnp current blocking layer forming a PBH by burying the tapered layer; and
a ridge waveguide formed on the active layer, the tapered layer, and the pnp current blocking layer, the ridge wavegu

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Oh Su Hwan
• Kim Min Su

Classifications

• H01S5/227

  Buried mesa structure {; Striped active layer} · CPC title

• H01S5/1064

  varying width along the optical axis · CPC title

• H01S5/141

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01L33/0045

  Electricity · mapped topic