Thin film photovoltaic cell with back contacts

Patent metadata

Field	Value
Publication number	US-9859451-B2
Application number	US-201514751276-A
Country	US
Kind code	B2
Filing date	Jun 26, 2015
Priority date	Jun 26, 2015
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes include a photon-reflective material.

First claim

What is claimed is:

1. A photovoltaic cell comprising:
a substrate, the substrate being, at least in part, transparent to allow light to enter the photovoltaic cell through the substrate;
a light absorption layer associated with the substrate, the light absorption layer having opposite first and second surfaces, the first surface being closer to the substrate than the second surface;
a passivation layer disposed over the second surface of the light absorption layer;
a plurality of first discrete contacts and a plurality of second discrete contacts, the plurality of first discrete contacts and the plurality of second discrete contacts both residing, at least in part, within the passivation layer, and facilitating electrical coupling to the light absorption layer; and
a first electrode and a second electrode disposed over the passivation layer and comprising a photon reflective material, the first electrode contacting the plurality of first discrete contacts and the second electrode contacting the plurality of second discrete contacts.

2. The photovoltaic cell of claim 1 , wherein the light absorption layer comprises a thin film semiconductor material, the thin film semiconductor material having a thickness of 5 microns or less, and comprising one of copper-indium-gallium-selenide (CIGS), copper-zinc-tin-sulfide (CZTS), or a Perovskite material.

3. The photovoltaic cell of claim 2 , wherein the plurality of first discrete contacts comprise a plurality of heterojunction-type discrete contacts to the light absorption layer extending through the passivation layer, and the plurality of second discrete contacts comprise a plurality of ohmic-type contacts to the light absorption layer extending through the passivation layer.

4. The photovoltaic cell of claim 1 , wherein the passivation layer is a second surface passivation layer, and wherein the photovoltaic cell further comprises a first surface passivation layer disposed over the first surface of the light absorption layer, between the substrate and the light absorption layer.

5. The photovoltaic cell of claim 4 , wherein the first surface passivation layer and second surface passivation layer comprise a common passivation material.

6. The photovoltaic cell of claim 1 , wherein the plurality of first discrete contacts and the plurality of second discrete contacts extend through the passivation layer and comprise surfaces co-planar with a surface of the passivation layer.

7. The photovoltaic cell of claim 1 , wherein the plurality of first discrete contacts comprise a plurality of heterojunction-type discrete contacts to the light absorption layer, and the plurality of second discrete contacts comprise a plurality of ohmic-type discrete contacts to the light absorption layer.

8. The photovoltaic cell of claim 7 , wherein the light absorption layer comprises a semiconductor material, the semiconductor material comprising one of copper-indium-gallium-selenide (CIGS), copper-zinc-tin-sulfide (CZTS), or a Perovskite material, and wherein the plurality of heterojunction-type discrete contacts each comprise a buffer material and a transparent conducting oxide, and the plurality of ohmic-type discrete contacts comprise a metal contact to the light absorption layer.

9. The photovoltaic cell of claim 1 , wherein the first electrode and second electrode comprise interdigitated first and second conductive lines, respectively disposed over the corresponding plurality of first discrete contacts and the corresponding plurality of second discrete contacts.

10. A photovoltaic device comprising:
a photovoltaic cell, the photovoltaic cell comprising:
a substrate, the substrate being, at least in part, transparent to allow light to enter the photovoltaic cell through the substrate;
a light absorption layer associated with the substrate, the light absorption layer having opposite first and second surfaces, the first surface being closer to the substrate than the second surface;
a first surface passivation layer and a second surface passivation layer, the first surface passivation layer being disposed over the first surface of the light absorption layer, between the substrate and the light absorption layer, and the second surface passivation layer being disposed over the second surface of the light absorption layer;
a plurality of first discrete contacts and a plurality of second discrete contacts, the plurality of first discrete contacts and the plurality of second discrete contacts both residing, at least in part, within the second surface passivation layer, and facilitating electrical coupling to the light absorption layer; and
a first electrode and a second electrode disposed over the second surface passivation layer and comprising a photon-reflective material, the first electrode contacting the plurality of first discrete contacts, and the second electrode contacting the plurality of second discrete contacts.

11. The photovoltaic device of claim 10 , wherein first discrete contacts of the plurality of first discrete contacts, and second discrete contacts of the plurality of second discrete contacts each have a characteristic dimension of 500 nanometers or less.

12. The photovoltaic device of claim 10 , wherein the plurality of first discrete contacts are a plurality of first contact vias extending through the second surface passivation layer, and the plurality of second discrete contacts are a plurality of second contact vias extending through the second surface passivation layer.

13. The photovoltaic device of claim 10 , wherein the plurality of first discrete contacts and the plurality of second discrete contacts extend through the second surface passivation layer and comprise surfaces coplanar with a surface of the second surface passivation layer.

14. The photovoltaic device of claim 10 , wherein the plurality of first discrete contacts comprise a plurality of heterojunction-type discrete contacts to the light absorption layer, and the plurality of second discrete contacts comprise a plurality of ohmic-type discrete contacts to the light absorption layer.

15. The photovoltaic device of claim 10 , wherein the first electrode and the second electrode cover at least 90% of the second surface passivation layer and comprise interdigitated first and second conductive lines, respectively disposed over the corresponding plurality of first discrete contacts and the corresponding plurality of second discrete contacts.

Assignees

• IBM

Inventors

• Eickelmann Hans-Juergen
• Kellmann Ruediger
• Kuehl Hartmut
• Schmidt Markus

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/1868

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic

• H01L31/0326

  Electricity · mapped topic