Semiconductor device comprising regions of different current drive capabilities

Patent metadata

Field	Value
Publication number	US-9859238-B2
Application number	US-201415121499-A
Country	US
Kind code	B2
Filing date	Jun 26, 2014
Priority date	Jun 26, 2014
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

An object of the present invention is to provide a semiconductor device capable of eliminating unevenness of current distribution in a plane. A semiconductor device according to the present invention is a semiconductor device including a transistor cell region where a plurality of transistor cells is arranged on a semiconductor substrate, the semiconductor device including an electrode pad which is arranged avoiding the transistor cell region on the semiconductor substrate and is electrically connected to a one-side current electrode of each of the cells, in which the transistor cell region contains a plurality of regions each of which has a different current drive capability from each other depending on a distance from the electrode pad.

First claim

The invention claimed is:

1. A semiconductor device including a transistor cell region where a plurality of transistor cells is arranged on a semiconductor substrate,
said semiconductor device comprising an emitter pad which is arranged avoiding said transistor cell region on said semiconductor substrate and is electrically connected to a one-side current electrode of each of said cells, wherein
said transistor cell region contains a plurality of regions, each of which has a different current drive capability from each other depending on a distance from said emitter pad.

2. The semiconductor device according to claim 1 , wherein
said emitter pad has a circular shape, an elliptical shape, or a polygonal shape having at least five or more vertices.

3. The semiconductor device according to claim 1 , wherein
at least part of said cells includes, in addition to said one-side current electrode, a current detection electrode having a smaller area than that of said one-side current electrode.

4. The semiconductor device according to claim 1 , further comprising a temperature detection diode which detects a temperature of said semiconductor device.

5. The semiconductor device according to claim 4 , wherein
an anode of said temperature detection diode is connected to said emitter pad.

6. The semiconductor device according to claim 3 , further comprising a temperature detection diode which detects a temperature of said semiconductor device.

7. The semiconductor device according to claim 1 ,
wherein said semiconductor substrate includes a silicon carbide substrate.

8. A semiconductor device including a transistor cell region where a plurality of transistor cells is arranged on a semiconductor substrate, said semiconductor device comprising:
an electrode pad which is arranged avoiding said transistor cell region on said semiconductor substrate and is electrically connected to a one-side current electrode of each of said cells; and
a gate pad directly connected to each of the plurality of transistor cells, wherein
said transistor cell region contains a plurality of regions, each of which has a different current drive capability from each other depending on a distance from said electrode pad.

9. The semiconductor device according to claim 8 , wherein
said electrode pad has a circular shape, an elliptical shape, or a polygonal shape having at least five or more vertices.

10. The semiconductor device according to claim 8 , wherein
at least part of said cells includes, in addition to said one-side current electrode, a current detection electrode having a smaller area than that of said one-side current electrode.

11. The semiconductor device according to claim 8 , further comprising a temperature detection diode which detects a temperature of said semiconductor device.

12. The semiconductor device according to claim 11 , wherein
an anode of said temperature detection diode is connected to said electrode pad.

13. The semiconductor device according to claim 10 , further comprising a temperature detection diode which detects a temperature of said semiconductor device.

14. The semiconductor device according to claim 8 , wherein said semiconductor substrate includes a silicon carbide substrate.

15. A semiconductor device including a transistor cell region where a plurality of transistor cells is arranged on a semiconductor substrate, said semiconductor device comprising:
an electrode pad which is arranged avoiding said transistor cell region on said semiconductor substrate and is electrically connected to a one-side current electrode of each of said cells; and
a temperature detection diode which detects a temperature of said semiconductor device, wherein
said transistor cell region contains a plurality of regions, each of which has a different current drive capability from each other depending on a distance from said electrode pad, and
an anode of said temperature detection diode is connected to said electrode pad.

Assignees

• Mitsubishi Electric Corp

Inventors

• Godo Shinsuke
• Kawamoto Atsunobu
• Yamamoto Koji

Classifications

• H10W72/07533

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/941

  Dispositions of bond pads · CPC title

• H10W72/932

  Plan-view shape, i.e. in top view · CPC title