Magnetoresistive devices

Patent metadata

Field	Value
Publication number	US-9857438-B2
Application number	US-201514691054-A
Country	US
Kind code	B2
Filing date	Apr 20, 2015
Priority date	Apr 20, 2015
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

Magnetoresistive devices can include a first and second sensor. Each of the first and second sensors can be configured to sense a first magnetic field component and a second magnetic field component. The first and second magnetic field components may be orthogonal to each other. Signals generated by the first and/or the second sensors can be used to determine local or global differentials of the magnetic field components. The first and/or the second sensors can each include four magnetoresistive sensors that can be connected in a Wheatstone bridge configuration. Further, the magnetoresistive devices can include magnets having a cavity formed therein, where the dimensions of the cavity are configured to reduce magnetic field conditions of a magnetic field in proximity to and/or within the cavity.

First claim

What is claimed is:

1. A magnetoresistive device, comprising:
a first magnetoresistive sensor sensitive to a first magnetic field component of a magnetic field;
a second magnetoresistive sensor sensitive to the first magnetic field component;
a third magnetoresistive sensor sensitive to a second magnetic field component of the magnetic field;
a fourth magnetoresistive sensor sensitive to the second magnetic field component, wherein the first magnetoresistive sensor, the second magnetoresistive sensor, the third magnetoresistive sensor, and the fourth magnetoresistive sensor are arranged in a first sensing area;
a fifth magnetoresistive sensor sensitive to the first magnetic field component;
a sixth magnetoresistive sensor sensitive to the first magnetic field component;
a seventh magnetoresistive sensor sensitive to the second magnetic field component; and
an eighth magnetoresistive sensor sensitive to the second magnetic field component, wherein the fifth magnetoresistive sensor, the sixth magnetoresistive sensor, the seventh magnetoresistive sensor, and the eighth magnetoresistive sensor are arranged in a second sensing area that is spaced apart from the first sensing area,
wherein the first, second, fifth and sixth magnetoresistive sensors are connected to form a first Wheatstone bridge that is configured to determine a magnetic field differential of the first magnetic field component and wherein the third, fourth, seventh and eighth magnetoresistive sensors are connected to form a second Wheatstone bridge that is configured to determine a magnetic field differential of the second magnetic field component.

2. The magnetoresistive device of claim 1 , further comprising:
a biasing magnet arranged relative to the first sensing area, the biasing magnet being configured to reduce magnetic field conditions within the first sensing area.

3. The magnetoresistive device of claim 1 , wherein:
the first magnetoresistive sensor and the second magnetoresistive sensor are configured to have an inverse relationship;
the third magnetoresistive sensor and the fourth magnetoresistive sensor are configured to have an inverse relationship;
the fifth magnetoresistive sensor and the sixth magnetoresistive sensor are configured to have an inverse relationship; and
the seventh magnetoresistive sensor and the eighth magnetoresistive sensor are configured to have an inverse relationship.

4. The magnetoresistive device of claim 1 , wherein:
the first magnetoresistive sensor and the second magnetoresistive sensor are configured to have a direct relationship;
the third magnetoresistive sensor and the fourth magnetoresistive sensor are configured to have a direct relationship;
the fifth magnetoresistive sensor and the sixth magnetoresistive sensor are configured to have an inverse relationship; and
the seventh magnetoresistive sensor and the eighth magnetoresistive sensor are configured to have an inverse relationship.

5. The magnetoresistive device of claim 1 , wherein the first magnetic field component is orthogonal to the second magnetic field component.

6. The magnetoresistive device of claim 1 , wherein:
a signal generated by the first magnetoresistive sensor decreases while a signal generated by the second magnetoresistive sensor increases or the signal generated by the first magnetoresistive sensor increases while the signal generated by the second magnetoresistive sensor decreases in response to the first magnetic field component;
a signal generated by the fifth magnetoresistive sensor decreases while a signal generated by the sixth magnetoresistive sensor increases or the signal generated by the fifth magnetoresistive sensor increases while the signal generated by the sixth magnetoresistive sensor decreases in response to the first magnetic field component;
a signal generated by the third magnetoresistive sensor decreases while a signal generated by the fourth magnetoresistive sensor increases or the signal generated by the third magnetoresistive sensor increases while the signal generated by the fourth magnetoresistive sensor decreases in response to the second magnetic field component; and
a signal generated by the seventh magnetoresistive sensor decreases while a signal generated by the eighth magnetoresistive sensor increases or the signal generated by the seventh magnetoresistive sensor increases while the signal generated by the eighth magnetoresistive sensor decreases in response to the second magnetic field component.

7. The magnetoresistive device of claim 1 , wherein:
both a signal generated by the first magnetoresistive sensor and a signal generated by the second magnetoresistive sensor increase or decrease in response to the first magnetic field component;
both a signal generated by the fifth magnetoresistive sensor and a signal generated by the sixth magnetoresistive sensor increase or decrease in response to the first magnetic field component;
both a signal generated by the third magnetoresistive sensor and a signal generated by the fourth magnetoresistive sensor increase or decrease in response to the second magnetic field component; and
both a signal generated by the seventh magnetoresistive sensor and a signal generated by the eighth magnetoresistive sensor increase or decrease in response to the second magnetic field component.

8. The magnetoresistive device of claim 1 , wherein:
a resistance of the first magnetoresistive sensor and a resistance of the second magnetoresistive sensor have an inverse relationship in response to the first magnetic field component;
a resistance of the third magnetoresistive sensor and a resistance of the fourth magnetoresistive sensor have an inverse relationship in response to the second magnetic field component;
a resistance of the fifth magnetoresistive sensor and a resistance of the sixth magnetoresistive sensor have an inverse relationship in response to the first magnetic field component; and
a resistance of the seventh magnetoresistive sensor and a resistance of the eighth magnetoresistive sensor have an inverse relationship in response to the second magnetic field component.

9. The magnetoresistive device of claim 1 , wherein:
a resistance of the first magnetoresistive sensor and a resistance of the second magnetoresistive sensor have a direct relationship in response to the first magnetic field component;
a resistance of the third magnetoresistive sensor and a resistance of the fourth magnetoresistive sensor have a direct relationship in response to the second magnetic field component;
a resistance of the fifth magnetoresistive sensor and a resistance of the sixth magnetoresistive sensor have a direct relationship in response to the first magnetic field component; and
a resistance of the seventh magnetoresistive sensor and a resistance of the eighth magnetoresistive sensor have a direct relationship in response to the second magnetic field component.

10. The magnetoresistive device of claim 1 , wherein the magnetoresistive device is configured in a first half bridge between the first magnetoresistive sensor and the fifth magnetoresistive sensor and in a second half bridge between the second magnetoresistive sensor and the sixth magnetoresistive sensor.

11. The magnetoresistive device of claim 10 , wherein the magnetoresistive device is configured in a third half bridge between the third magnetoresistive sensor and the seventh magnetoresistive sensor and in a fourth half bridge between the fourth magnetoresistive sensor and the eighth magnetoresistive sensor.

12. The magnetoresistive device of claim 1 , wherein the magnetoresistive device is a speed sensor.

13. The magnetoresi

Assignees

• Infineon Technologies Ag

Inventors

• Werth Tobias

Classifications

• G01R33/095

  extraordinary magnetoresistance sensors · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G01R33/09 Primary

  Magnetoresistive devices · CPC title

• G01R33/093 Primary

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G01R33/091 Primary

  Constructional adaptation of the sensor to specific applications · CPC title