Solid-state materials formed of molecular clusters and method of forming same

Patent metadata

Field	Value
Publication number	US-9856281-B2
Application number	US-201414474972-A
Country	US
Kind code	B2
Filing date	Sep 2, 2014
Priority date	Mar 30, 2012
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2] n , where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.

First claim

The invention claimed is:

1. A solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n

wherein
Cluster1 comprises Co 6 Se 8 (PEt 3 ) 6 ;
Cluster2 comprises a carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.

2. The solid-state material of claim 1 , wherein the Cluster2 comprises C 60 and n is 2.

3. The solid-state material of claim 2 , wherein the solid-state material is assembled into a superatomic relative of a CdI 2 structure.

4. The solid-state material of claim 2 , wherein the solid-state material comprises hexagonal arrays of C 60 in a chair-like arrangement that is separated by layers of the Co 6 Se 8 (PEt 3 ) 6 clusters.

5. The solid-state material of claim 2 , wherein the solid-state material includes at least two C 60 layers spaced apart by about 12.5 Å.

6. The solid-state material of claim 2 , wherein the solid-state material includes at least two C 60 s having a centroid-to-centroid distance about 9.9 Å and a shortest non-bonded C—C spacing of about 3.4 Å.

7. The solid-state material of claim 2 , wherein each Co 6 Se 8 (PEt 3 ) 6 cluster transfers two electrons and each C 60 cluster receives one electron.

8. The solid-state material of claim 2 , wherein the solid state material has a thermal activation energy of about 150 meV.

9. The solid-state material of claim 1 , wherein the solid-state material is used in an electronic material.

10. The solid-state material of claim 1 , wherein the solid-state material is used in a flexible electronic material.

11. A solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n ,

wherein
Cluster1 comprises Cr 6 Te 8 (PEt 3 ) 6 ;
Cluster2 comprises a carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.

12. The solid-state material of claim 11 , wherein the Cluster2 comprises C 60 and n is 2.

13. The solid-state material of claim 12 , wherein the solid-state material is assembled into a superatomic relative of a CdI 2 structure.

14. The solid-state material of claim 12 , wherein the solid-state material comprises hexagonal arrays of C 60 in a chair-like arrangement that is separated by layers of the Cr 6 Te 8 (PEt 3 ) 6 clusters.

15. The solid-state material of claim 12 , wherein the solid-state material includes at least two C 60 layers spaced apart by about 12.3 Å.

16. The solid-state material of claim 12 , wherein the solid-state material includes at least two C 60 s having a centroid-to-centroid distance about 10.3 Å and a shortest non-bonded C—C spacing of about 3.7 Å.

17. The solid-state material of claim 12 , wherein each Cr 6 Te 8 (PEt 3 ) 6 cluster transfers two electrons and each C 60 cluster receives one electron.

18. The solid-state material of claim 12 , wherein the solid state material has a thermal activation energy of about 100 meV.

19. A solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n ,

wherein
Cluster1 comprises Ni 9 Te 6 (PEt 3 ) 8 ;
Cluster2 comprises a carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.

20. The solid-state material of claim 19 , wherein the Cluster2 comprises C 60 and n is 1.

21. The solid-state material of claim 19 , wherein the solid-state material is assembled into a rock-salt crystal structure.

22. The solid-state material of claim 21 , wherein the solid-state material comprises a face centered cubic structure.

23. The solid-state material of claim 22 , wherein the cubic structure has a lattice parameter of about 21.7 Å.

24. A method of forming a solid-state material comprising:
a) dissolving a metal chalcogenide molecular cluster in toluene;
b) dissolving a carbon cluster in toluene; and
c) combining the metal chalcogenide molecular cluster and the carbon cluster to form a solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n ,

wherein
Cluster1 comprises one of Co 6 Se 8 (PEt 3 ) 6 ,
Cr 6 Te 8 (PEt 3 ) 6 , and Ni 9 Te 6 (PEt 3 ) 8 ;
Cluster2 comprises the carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.

25. The method of claim 24 , further comprising decanting a supernatant after combining the metal chalcogenide molecular cluster and the carbon cluster.

26. The method of claim 25 , further comprising washing a remaining solid with toluene after decanting.

27. The method of claim 26 , further comprising drying the remaining solid under vacuum after washing.

28. The method of claim 27 , wherein the drying comprises drying for about 12 hours.

Assignees

• Univ Columbia

Inventors

• Nuckolls Colin
• Steigerwald Michael Louis
• Roy Xavier
• Kim Philip
• Lee Chulho
• Kang Seok Ju

Classifications

• C07F15/04

  Nickel compounds · CPC title

• C01P2002/84

  by UV- or VIS- data · CPC title

• H01L51/0046

  Electricity · mapped topic

• C07F11/00

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title