Organic thin film transistor, organic semiconductor thin film, and organic semiconductor material
US-2015166560-A1 · Jun 18, 2015 · US
US9853225B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9853225-B2 |
| Application number | US-201414772095-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2014 |
| Priority date | Mar 5, 2013 |
| Publication date | Dec 26, 2017 |
| Grant date | Dec 26, 2017 |
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A compound is represented by Formula (1): wherein, each X is independently oxygen, sulfur, or selenium; m is 0 or 1; each n is independently 0 or 1; R 1 -R 3 are each independently, for example, hydrogen or alkyl having 1 to 20 carbons; wherein (i) in the case of m=0, it is excluded that all of R 1 -R 3 are hydrogen at the same time; (ii) in the case of m=0, n=0 and in the case that m is 0, one of n is 0 and the other is 1, it is excluded that “both of X are sulfur and all R 3 s are the same atoms or groups at the same time”; (iii) in the case of m=0, n=1, it is excluded that all R 3 s are the same atoms or groups at the same time, and at least one of R 3 s is hydrogen.
Opening claim text (preview).
What is claimed is: 1. A compound represented by Formula (1-1) or Formula (1-2): wherein, in Formula (1-1) and Formula (1-2), each X is independently sulfur, or selenium; m is 0 or 1; each n existing at two positions is 0; and each R 3 existing at two positions is independently fluorine, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl or thiazolyl, wherein at least one hydrogen in the alkyl may be replaced with fluorine, and at least one hydrogen on a ring of the aryl, pyridyl, furyl, thienyl and thiazolyl may be replaced with at least one selected from the group consisting of fluorine and alkyl having 1 to 10 carbons. 2. The compound described in claim 1 , wherein R 3 s in Formula (1-1) and Formula (1-2) are the same group selected from the group consisting of alkyl having 1 to 20 carbons, phenyl, furyl and thienyl. 3. The compound described in claim 2 , wherein R 3 s in Formula (1-1) and Formula (1-2) are the same group selected from the group consisting of alkyl having 6 to 12 carbons. 4. The compound described in claim 1 , wherein in Formula (1-1) and Formula (1-2), each R 3 is independently alkyl having 1 to 20 carbons or aryl, wherein at least one hydrogen in the alkyl may be replaced with fluorine, and at least one hydrogen on a ring of the aryl may be replaced with at least one selected from the group consisting of fluorine and alkyl having 1 to 10 carbons. 5. A method for producing a compound represented by Formula (1): wherein, in Formula (1), each X is independently sulfur, or selenium; m is 0 or 1; each n existing at two positions is independently 0 or 1; R 1 -R 3 are each independently hydrogen, fluorine, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl or thiazolyl, wherein at least one hydrogen in the alkyl may be replaced with fluorine, and at least one hydrogen on a ring of the aryl, pyridyl, furyl, thienyl and thiazolyl may be replaced with at least one selected from the group consisting of fluorine and alkyl having 1 to 10 carbons; wherein (i) in the case of m=0, it is excluded that all of R 1 -R 3 are hydrogen at the same time; (ii) in the case that m is 0 and both of n are 0, and in the case that m is 0, one of n is 0 and the other is 1, it is excluded that both of X are sulfur and all R 3 s are the same atoms or groups at the same time; (iii) in the case that m is 0 and both of n are 1, it is excluded that all R 3 s are the same atoms or groups at the same time, and at least one of R 3 s is hydrogen, wherein the method comprises: a step of cross-coupling a compound represented by Formula (11) and a compound represented by Formula (12) to obtain a compound represented by Formula (13); a step of deprotecting a methoxy from the compound represented by Formula (13) to obtain a compound represented by Formula (14); a step of allowing the compound represented by Formula (14) to react with N,N-dialkyl carbamoylthiochloride or N,N-dialkyl carbamoylselenochloride to obtain a compound represented by Formula (15); and a step of heating the compound represented by Formula (15) to obtain the compound represented by Formula (1), wherein, in Formulae (11)-(15), the definitions of m, n and R 1 -R 3 are the same as the corresponding symbols in Formula (1) respectively, Me is methyl, Hal is bromine or iodine, and each R is independently alkyl having 1-3 carbons. 6. A method for producing a compound represented by Formula (1): wherein, in Formula (1), each X is oxygen; m is 0 or 1; each n existing at two positions is independently 0 or 1; R 1 -R 3 are each independently hydrogen, fluorine, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl or thiazolyl, wherein at least one hydrogen in the alkyl may be replaced with fluorine, and at least one hydrogen on a ring of the aryl, pyridyl, furyl, thienyl and thiazolyl may be replaced with at least one selected from the group consisting of fluorine and alkyl having 1 to 10 carbons; wherein (i) in the case of m=0, it is excluded that all of R 1 -R 3 are hydrogen at the same time; (ii) in the case that m is 0 and both of n are 1, it is excluded that all R 3 s are the same atoms or groups at the same time, and at least one of R 3 s is hydrogen, wherein the method comprises: a step of cross-coupling a compound represented by Formula (11) and a compound represented by Formula (12) to obtain a compound represented by Formula (13); a step of deprotecting a methoxy from the compound represented by Formula (13) to obtain a compound represented by Formula (14); and a step of heating and dehydrating the compound represented by Formula (14) under a zeolite catalyst to obtain the compound represented by Formula (1), wherein, in Formulae (11)-(14), the definitions of m, n and R 1 -R 3 are the same as the corresponding symbols in Formula (1) respectively, Me is methyl, and Hal is bromine or iodine. 7. An organic semiconductor material comprising the compound described in claim 1 . 8. An organic semiconductor film comprising the organic semiconductor material described in claim 7 . 9. An organic field effect transistor comprising a substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode and an organic semiconductor layer, wherein the organic semiconductor layer is constituted of the organic semiconductor film described in claim 8 .
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