Memory device and operating method of memory device

Patent metadata

Field	Value
Publication number	US-9852061-B2
Application number	US-35827809-A
Country	US
Kind code	B2
Filing date	Jan 23, 2009
Priority date	Oct 2, 2008
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

A memory device may include a non-volatile memory and non-volatile RAM. The non-volatile memory may include a data block and a metadata block. Metadata information with respect to the data block may be included in the metadata block. A portion of metadata with respect to the data block or the metadata with respect to the metadata block may be stored in the non-volatile RAM.

First claim

What is claimed is:

1. A memory device, comprising:
a processor configured to verify that a write command of a non-volatile memory is a sequential write in response to a size of data of the write command being greater than or equal to a threshold, and verify that the write command is a random write in response to the size of the data of the write command being less than the threshold;
the non-volatile memory including data blocks and a metadata block and configured to store first metadata corresponding to the data blocks in the metadata block; and
a non-volatile RAM configured to read and write in byte units or word units, and store second metadata,
wherein the non-volatile RAM is configured to store data corresponding to a write command and store map information of the stored data, in response to the write command of the non-volatile memory being verified to be a random write.

2. The memory device of claim 1 , wherein the second metadata includes an erase count of each of the data blocks.

3. The memory device of claim 1 , wherein the second metadata includes state information corresponding to each of pages included in each of the respective data blocks.

4. The memory device of claim 1 , wherein the second metadata includes an erase count of the metadata block.

5. The memory device of claim 1 , wherein the second metadata includes state information of each of the pages included in the metadata block.

6. The memory device of claim 1 , wherein:
the second metadata includes a mapping relation between the logical block address and physical address of a data page stored in the data blocks; and
the first metadata includes a mapping relation between the logical page address and a physical page address in the logical block address of the data page stored in the data blocks.

7. The memory device of claim 1 , wherein the RAM is configured to:
select eviction data from among the stored data based on the map information in response to a size of available space being less than a threshold; and
program one of the data blocks of the non-volatile memory with the eviction data.

8. The memory device of claim 7 , wherein the non-volatile RAM is configured to:
program the one of the data blocks with the eviction data; and
update the map information.

9. The memory device of claim 1 , wherein the non-volatile RAM is configured to output stored data as data corresponding to a read command; in response to data of the read command of the non-volatile memory existing in the non-volatile RAM.

10. A method of operating a memory device including a non-volatile memory and a non-volatile RAM, the method comprising:
verifying that a write command of the non-volatile memory is a sequential write in response to a size of data of the write command being greater than or equal to a threshold;
verifying that the write command is a random write in response to the size of the data of the write command being less than the threshold;
storing data corresponding to the write command and storing map information of the stored data in the non-volatile RAM in response to the write command of the non-volatile memory being verified to be the random write; and
programming data corresponding to the write command in the non-volatile memory in response to the write command being verified to be the sequential write.

11. The method of claim 10 , further comprising:
verifying whether a size of available space of the non-volatile RAM is less than the threshold;
selecting eviction data from among data stored in the non-volatile RAM in response to the size of the available space being verified to be less than the threshold; and
programming the eviction data to the non-volatile memory.

12. The method of claim 10 , further comprising:
verifying whether data corresponding to a read command with respect to the non-volatile memory exists in the non-volatile RAM;
reading data corresponding to the read command from the non-volatile RAM in response to the data corresponding to the read command being verified to exist in the non-volatile RAM; and
transmitting the data read from the non-volatile RAM to a host or a controller.

13. A method of operating a memory device including a non-volatile memory and a non-volatile RAM, the method comprising:
converting a logical block address of an access command of the non-volatile memory into a physical address based on map information stored in the non-volatile RAM;
accessing page map information stored in a metadata area of the non-volatile memory based on the physical address;
converting a logical page address of the access command into a physical page address based on the accessed page map information;
accessing data stored in a data area of the non-volatile memory based on the physical page address; and
assigning the access command to any one of channels of the non-volatile memory based on a remainder after dividing the logical block address or the logical page address of the access command by a number of the channels,
wherein a value of the remainder determines the assigning of the access command to a specified channel.

14. A non-transitory computer-readable storage medium storing a program to operate a memory device including a non-volatile memory and a non-volatile RAM, comprising instructions to cause a computer to:
verify that a write command of the non-volatile memory is a sequential write in response to a size of data of the write command being greater than or equal to a threshold;
verify that the write command is a random write in response to the size of the data of the write command being less than the threshold;
store data corresponding to the write command and store map information of the stored data in the non-volatile RAM in response to the write command of the non-volatile memory being verified to be the random write; and
program data corresponding to the write command in the non-volatile memory in response to the write command being the sequential write.

Assignees

• Lee Jae Don
• Lee Choong Hun
• Choi Gyu Sang
• Son Min Young
• Samsung Electronics Co Ltd

Inventors

• Lee Jae Don
• Lee Choong Hun
• Choi Gyu Sang
• Son Min Young

Classifications

• G06F12/0246 Primary

  in block erasable memory, e.g. flash memory · CPC title

• G06F2212/7203

  Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks · CPC title

• G06F2212/7205

  Cleaning, compaction, garbage collection, erase control · CPC title

• G06F2212/7201

  Logical to physical mapping or translation of blocks or pages · CPC title

• G06F2212/7207

  management of metadata or control data · CPC title