Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
US9851637B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9851637-B2 |
| Application number | US-201615284721-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 4, 2016 |
| Priority date | Oct 6, 2015 |
| Publication date | Dec 26, 2017 |
| Grant date | Dec 26, 2017 |
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A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Z − represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m. Z − (M m+ ) 1/m (d1)
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What is claimed is: 1. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1) shown below: Z − (M m+ ) 1/m (d1) wherein Z − represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m. 2. The resist composition according to claim 1 , wherein the acid dissociation constant pKa of the conjugate acid of the compound (D1) is less than 3. 3. The resist composition according to claim 1 , wherein the octanol/water partition coefficient (log P ow ) of the compound (D1) is 1.5 or more. 4. The resist composition according to claim 1 , wherein Z − is an anion represented by formula (d1-a) shown below: wherein Rh represents a halogen atom; and d0 represents an integer of 1 to 4. 5. The resist composition according to claim 4 , wherein Rh represents a fluorine atom. 6. The resist composition according to claim 1 , wherein the compound (D1) is represented by general formula (d1-10) shown below: wherein R 201 to R 203 each independently represents an aryl group, an alkyl group or an alkenyl group, provided that two of R 201 to R 203 may be mutually bonded to form a ring with the sulfur atom; Rh represents a halogen atom; and d0 represents an integer of 1 to 4. 7. The resist composition according to claim 6 , wherein Rh represents a fluorine atom. 8. The resist composition according to claim 1 , further comprising an acid generator component (B) which generates acid upon exposure, provided that the acid generator component (B) excludes the compound (D1). 9. The resist composition according to claim 1 , wherein the base component (A) comprises a polymeric compound (A1), and the polymeric compound (A1) comprises a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid. 10. A method of forming a resist pattern, comprising: using a resist composition of claim 1 to form a resist film, exposing the resist film, and developing the exposed resist film to form a resist pattern.
with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title
Salts thereof · CPC title
the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title
Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings · CPC title
o-Hydroxy carboxylic acids · CPC title
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