Compact and low loss Y-junction for submicron silicon waveguide

US9851503B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9851503-B2
Application numberUS-201715446375-A
CountryUS
Kind codeB2
Filing dateMar 1, 2017
Priority dateNov 30, 2012
Publication dateDec 26, 2017
Grant dateDec 26, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.

First claim

Opening claim text (preview).

What is claimed is: 1. A submicron optical splitter device comprising: an input port for inputting a beam of light in a propagation direction; first and second output ports for outputting first and second portions of the beam of light; a tapered section divided into a plurality of segments between the input port and the output port; wherein the segments increase in width from the input port to a maximum width proximate a half-way point of the tapered section; wherein the segments decrease in width towards the first and second output ports, whereby the maximum width is greater than the width of the segment proximate the two output ports. 2. The device according to claim 1 , wherein a plurality of adjacent segments proximate the half way point comprise the same maximum width. 3. The device according to claim 2 , wherein the plurality of adjacent segments comprises four segments. 4. The device according to claim 2 , wherein the input port and the first and second output ports each has a width of 0.5 um. 5. The device according to claim 4 , further comprising a gap between the first and second output ports; wherein the gap has a width of 0.2 um. 6. The device according to claim 5 , wherein the maximum width is 1.4 um. 7. The device according to claim 3 , wherein a total length of the plurality of segments is 2 um. 8. The device according to claim 1 , wherein the tapered section is symmetrical about the propagation direction to ensure balanced output at the first and second output ports. 9. The device according to claim 1 , wherein the plurality of segments comprises at least 13 segments. 10. The device according to claim 1 , wherein the plurality of segments comprises segments of equal length. 11. The device according to claim 1 , wherein the tapered section comprises silicon with a silicon oxide cladding.

Assignees

Inventors

Classifications

  • Splitter · CPC title

  • G02B6/125Primary

    Bends, branchings or intersections · CPC title

  • Subwavelength-diameter waveguides, e.g. nanowires · CPC title

  • using a mixing element which evenly distributes an input signal over a number of outputs · CPC title

  • Evolutionary algorithms, e.g. genetic algorithms or genetic programming · CPC title

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What does patent US9851503B2 cover?
A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.
Who is the assignee on this patent?
Elenion Tech Llc
What technology area does this patent fall under?
Primary CPC classification G02B6/125. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 26 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).