Method for preparing graphene

Patent metadata

Field	Value
Publication number	US-9850571-B2
Application number	US-201214396519-A
Country	US
Kind code	B2
Filing date	Jul 3, 2012
Priority date	Apr 23, 2012
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr 4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr 4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr 4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr 4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

First claim

What is claimed is:

1. A method for preparing graphene, comprising the following steps:
(1) selecting a proper material as a substrate;
(2) directly depositing CBr 4 and catalys on a surface of the substrate, the catalyst is Ga, the deposition manner for CBr 4 and catalyst is alternatively deposition in any order more than once, in each deposition manner, the total deposition of CBr 4 is 3.8E7-3.8E9 molecules/μm 2 , the total deposition of catalyst is 1.7E7-1.7E9 atoms/m 2 , and a deposition temperature for the CBr 4 and catalyst is between 10° C. and 490° C.;
(3) performing annealing treatment on the sample obtained by step 2 to obtain the graphene.

2. The method for preparing graphene according to claim 1 , characterized in that, the method for depositing the CBr 4 and catalyst is molecular-beam epitaxy or chemical vapor deposition.

3. The method for preparing graphene according to claim 1 , characterized in that, the substrate material is selected from metal, semiconductor, or insulator.

4. The method for preparing graphene according to claim 3 , characterized in that, the substrate material is selected from silicon, germanium, silicon oxide, and sapphire.

5. The method for preparing graphene according to claim 1 , characterized in that, the method for annealing treatment is that: the substrate is raised to 650-720° C., and the annealing time is 5-180 minutes; when completed, the temperature of the substrate is decreased to room temperature.

6. The method for preparing graphene according to claim 1 , characterized in that, before step (1), the substrate further requires for a deoxygenation treatment and a pre-annealing treatment.

7. The method for preparing graphene according to claim 6 , characterized in that, deoxidize temperature of the substrate material in the deoxygenation treatment is 400-700° C., temperature of the annealing treatment of the substrate material is 600-750° C.

8. A method for preparing graphene according to claim 1 , characterized in that, in step (2) the deposition temperature for the CBr 4 and catalyst is 450° C.

Assignees

• Wang Shumin
• Gong Qian
• Xie Xiaoming
• Wang Hailong
• Di Zengfeng
• Ding Guqiao
• Liu Qingbo
• Shanghai Inst Microsystem & Information Tech Cas

Inventors

• Wang Shumin
• Gong Qian
• Xie Xiaoming
• Wang Hailong
• Di Zengfeng
• Ding Guqiao
• Liu Qingbo

Classifications

• C01B32/188

  by epitaxial growth · CPC title

• C23C16/26 Primary

  Deposition of carbon only · CPC title

• C01B32/186

  by chemical vapour deposition [CVD] · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title