Dense packing particle size distribution for pdc cutters
US-2015375366-A1 · Dec 31, 2015 · US
Polycrystalline diamond and manufacturing method thereof
US9850135B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9850135-B2 |
| Application number | US-201214235758-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 26, 2012 |
| Priority date | Jul 28, 2011 |
| Publication date | Dec 26, 2017 |
| Grant date | Dec 26, 2017 |
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Abstract
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Nano polycrystalline diamond is composed of carbon and a plurality of impurities other than carbon. A concentration of each of the plurality of impurities is not higher than 0.01 mass %, and the nano polycrystalline diamond has a crystal grain size (a maximum length) not greater than 500 nm. The nano polycrystalline diamond can be fabricated by preparing graphite in which a concentration of an impurity is not higher than 0.01 mass % and converting graphite to diamond by applying an ultra-high pressure and a high temperature to graphite.
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The invention claimed is: 1. Polycrystalline diamond, comprising: carbon; and a plurality of impurities, the polycrystalline diamond having a concentration of each of said plurality of impurities not higher than 0.01 mass % and a crystal grain size not greater than 500 nm, the polycrystalline diamond having Knoop hardness not lower than 150 GPa, and the polycrystalline diamond fabricated by sintering graphite obtained by thermal decomposition of hydrocarbon having purity not lower than 99.99%, at a temperature not lower than 1500° C. 2. The polycrystalline diamond according to claim 1 , wherein a concentration of said impurities at a crystal grain boundary of said polycrystalline diamond is each not higher than 0.01 mass %. 3. The polycrystalline diamond according to claim 1 , wherein said plurality of impurities include hydrogen, oxygen, nitrogen, silicon, and boron, a concentration of said hydrogen is not higher than 2×10 18 /cm 3 , a concentration of said oxygen is not higher than 2×10 17 /cm 3 , a concentration of said nitrogen is not higher than 4×10 16 /cm 3 , a concentration of said silicon is not higher than 1×10 16 /cm 3 , and a concentration of said boron is not higher than 2×10 15 /cm 3 . 4. Polycrystalline diamond, comprising: carbon in which purity of a carbon isotope 12 C is not lower than 99.9 mass %; and a plurality of impurities, the polycrystalline diamond having a concentration of each of said plurality of impurities not higher than 0.01 mass % and a crystal grain size not greater than 500 nm, the polycrystalline diamond having Knoop hardness not lower than 150 GPa, and the polycrystalline diamond fabricated by sintering graphite obtained by thermal decomposition of hydrocarbon in which purity of said carbon isotope 12 C is not lower than 99.9 mass %, at a temperature not lower than 1500° C. 5. The polycrystalline diamond according to claim 4 , wherein a concentration of said impurities at a crystal grain boundary of said polycrystalline diamond is each not higher than 0.01 mass %. 6. The polycrystalline diamond according to claim 4 , wherein said plurality of impurities include hydrogen, oxygen, nitrogen, silicon, and boron, a concentration of said hydrogen is not higher than 2×10 18 /cm 3 , a concentration of said oxygen is not higher than 2×10 17 /cm 3 , a concentration of said nitrogen is not higher than 4×10 16 /cm 3 , a concentration of said silicon is not higher than 1×10 16 /cm 3 , and a concentration of said boron is not higher than 2×10 15 /cm 3 . 7. Polycrystalline diamond, comprising: carbon composed of any carbon isotope of 12 C and 13 C; and a plurality of impurities, the polycrystalline diamond having a concentration of each of said plurality of impurities not higher than 0.01 mass % and a crystal grain size not greater than 500 nm, the polycrystalline diamond having Knoop hardness not lower than 140 GPa, and the polycrystalline diamond fabricated by sintering graphite obtained by thermal decomposition of hydrocarbon in which purity of a carbon isotope 12 C or 13 C is not lower than 99.9 mass %, at a temperature not lower than 1500° C. 8. The polycrystalline diamond according to claim 7 , wherein a concentration of said impurities at a crystal grain boundary of said polycrystalline diamond is each not higher than 0.01 mass %. 9. The polycrystalline diamond according to claim 7 , wherein said plurality of impurities include hydrogen, oxygen, nitrogen, silicon, and boron, a concentration of said hydrogen is not higher than 2×10 18 /cm 3 , a concentration of said oxygen is not higher than 2×10 17 /cm 3 , a concentration of said nitrogen is not higher than 4×10 16 /cm 3 , a concentration of said silicon is not higher than 1×10 16 /cm 3 , and a concentration of said boron is not higher than 2×10 15 /cm 3 .
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- What does patent US9850135B2 cover?
- Nano polycrystalline diamond is composed of carbon and a plurality of impurities other than carbon. A concentration of each of the plurality of impurities is not higher than 0.01 mass %, and the nano polycrystalline diamond has a crystal grain size (a maximum length) not greater than 500 nm. The nano polycrystalline diamond can be fabricated by preparing graphite in which a concentration of an …
- Who is the assignee on this patent?
- Ikeda Kazuhiro, Arimoto Keiko, Yamamoto Katsuko, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification B01J3/062. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Dec 26 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).