Nanoparticles passivated with cationic metal-chalcogenide compound

Patent metadata

Field	Value
Publication number	US-9850130-B2
Application number	US-201314096585-A
Country	US
Kind code	B2
Filing date	Dec 4, 2013
Priority date	Dec 4, 2012
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.

First claim

What is claimed is:

1. A passivated nanoparticle comprising:
a core nanoparticle; and
a cationic metal-chalcogenide which passivates the core nanoparticle,
wherein the cationic metal-chalcogenide is fixed on a surface of the core nanoparticle, and
wherein the cationic metal-chalcogenide is selected from the group consisting of Zn 2 S 2 , Zn—Se—Se—Zn, Zn 2 Te 2 , Cu 2 S 2 , Cu 2 Se 2 , Cu 2 Te 2 , Mn 2 S 2 , Mn 2 Se 2 , Mn 2 Te 2 , Fe 2 S 2 , Fe 2 Se 2 , Fe 2 Te 2 , Co 2 S 2 , Co 2 Se 2 , Co 2 Te 2 , and mixtures thereof.

2. The passivated nanoparticle of claim 1 , wherein the core nanoparticle is a quantum dot, a metal nanocrystal (NC), a magnetic NC, an oxide NC, a nanowire, or a nanoplate.

3. The passivated nanoparticle of claim 2 , wherein the quantum dot is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe, and combinations thereof.

4. The passivated nanoparticle of claim 2 , wherein the quantum dot has a core-shell structure or a core-shell-shell structure.

Assignees

• Samsung Electronics Co Ltd
• Ajou Univ Industry-Academic Cooperation Foundation

Inventors

• Cho Kyung-Sang
• Kim Sang-Wook
• Kim Tae-Ho
• Choi Dong-Hyeok
• Choi Byoung-Lyong

Classifications

• C01P2002/86

  by NMR- or ESR-data · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C01P2006/90

  Other properties not specified above · CPC title

• C01G11/02

  Sulfides · CPC title

• C01G1/12

  Sulfides · CPC title