Nanocrystals containing CdTe core with CdS and ZnS coatings
US-9202867-B2 · Dec 1, 2015 · US
US9847469B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9847469-B2 |
| Application number | US-201414779784-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 25, 2014 |
| Priority date | Mar 25, 2013 |
| Publication date | Dec 19, 2017 |
| Grant date | Dec 19, 2017 |
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Provided is a thermoelectric material satisfying (MX) 1+a (TX 2 ) n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.
Opening claim text (preview).
The invention claimed is: 1. A thermoelectric material satisfying Chemical Formula 1 below and having a superlattice structure: (MX) 1+a (TX 2 ) n Chemical Formula 1 in Chemical Formula 1 above, M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from transition metals, X is a chalcogenide element, a is a real number satisfying 0≦a≦1, and n is a natural number of 1 to 3. 2. The thermoelectric material of claim 1 , wherein the a is a real number satisfying 0.07≦a≦0.23. 3. The thermoelectric material of claim 1 , wherein the superlattice structure is formed by alternately stacking (MX) 1+a layers and TX 2 layers (the number of TX 2 layers is n). 4. The thermoelectric material of claim 1 , wherein the superlattice structure is naturally formed by applying energy to a mixture containing M, X, and T each weighted so as to satisfy Chemical Formula 1 above. 5. The thermoelectric material of claim 1 , wherein in Chemical Formula 1 above, X is at least one selected from the group consisting of S, Se and Te. 6. The thermoelectric material of claim 5 , wherein in Chemical Formula 1 above, M is at least one selected from the group consisting of Bi, Pb, Sn and Sb. 7. The thermoelectric material of claim 6 , wherein in Chemical Formula 1 above, T is at least one element selected from Group 5. 8. The thermoelectric material of claim 7 , wherein in Chemical Formula 1 above, T is at least one selected from the group consisting of V, Ta, and Nb. 9. The thermoelectric material of claim 1 , wherein the thermoelectric material is in a bulk form. 10. The thermoelectric material of claim 1 , wherein a ratio of a thermoelectric figure of merit (ZT) in a cross-plane direction to a thermoelectric figure of merit (ZT) in an in-plane direction at 570K is 0.25 or more. 11. The thermoelectric material of claim 1 , wherein the thermoelectric material further includes doping impurities.
Thermal properties, e.g. thermal expansion coefficient · CPC title
Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1 · CPC title
Crystal structural characteristics, e.g. symmetry · CPC title
Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS] · CPC title
Refractory metals · CPC title
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