Method for generation of electrical power within a three-dimensional integrated structure and corresponding link device

Patent metadata

Field	Value
Publication number	US-9847373-B2
Application number	US-201214232606-A
Country	US
Kind code	B2
Filing date	Jul 5, 2012
Priority date	Jul 13, 2011
Publication date	Dec 19, 2017
Grant date	Dec 19, 2017

Abstract

Method for generation of electrical power within a three-dimensional integrated structure comprising several elements electrically interconnected by a link device, the method comprising the production of a temperature gradient in at least one region of the link device resulting from the operation of at least one of the said elements, and the production of electrical power using at least one thermo-electric generator comprising at least one assembly of thermocouples electrically connected in series and thermally connected in parallel and contained within the said region subjected to the said temperature gradient.

First claim

The invention claimed is:

1. A device used to interconnect electrical components, the device comprising:
a body;
an electrical interconnect configured for the interconnection of the electrical components, the electrical components overlying the electrical interconnect; and
a thermo-electric generator comprising an assembly of thermocouples electrically connected in series and thermally connected in parallel, the assembly of thermocouples being disposed under the electrical interconnect and being disposed at least in part in a same insulating material as the electrical interconnect, the thermo-electric generator being thermally coupled to an electrical component of the electrical components.

2. The device according to claim 1 , wherein the body comprises a semiconductor substrate, wherein the electrical interconnect is disposed on top of the substrate.

3. A device used to interconnect electrical components, the device comprising:
a body;
an electrical interconnect configured for the interconnection of the electrical components, the electrical components overlying the electrical interconnect; and
a thermo-electric generator comprising an assembly of thermocouples electrically connected in series and thermally connected in parallel, the assembly of thermocouples being disposed under the electrical interconnect and covered at least in part in a same insulating material as the electrical interconnect, the thermo-electric generator being thermally coupled to an electrical component of the electrical components;
wherein the body comprises a semiconductor substrate and insulating regions disposed at least in part within the substrate and wherein the assembly of thermocouples comprises parallel doped semiconductor regions, the semiconductor regions being electrically connected in series so as to form a chain of regions alternately between a first conductivity type and a second conductivity type opposite the first conductivity type.

4. The device according to claim 3 , wherein ones of the semiconductor regions extend within the substrate between parallel insulating regions.

5. The device according to claim 3 , wherein ones of the semiconductor regions extend over and above a part of the substrate while being electrically isolated from the part of the substrate and above at least one part of the insulating regions.

6. The device according to claim 3 , wherein ones of the semiconductor regions are coated with the insulating material and extend in their entirety above parallel insulating regions.

7. The device according to claim 3 , wherein ones of the semiconductor regions are coated with the insulating material and extend in their entirety above regions of the substrate located between the insulating regions.

8. The device according to claim 3 , wherein the semiconductor regions comprise polysilicon regions.

9. A device used to interconnect electrical components, the device comprising:
a body;
an electrical interconnect configured for the interconnection of the electrical components, the electrical components overlying the electrical interconnect; and
a thermo-electric generator comprising an assembly of thermocouples electrically connected in series and thermally connected in parallel, the assembly of thermocouples being disposed under the electrical interconnect and covered at least in part in a same insulating material as the electrical interconnect, the thermo-electric generator being thermally coupled to an electrical component of the electrical components;
wherein the body comprises a semiconductor substrate and insulating regions disposed at least in part within the substrate and wherein the assembly of thermocouples comprises parallel doped semiconductor regions, the semiconductor regions being electrically connected in series so as to form a chain of regions alternately between a first conductivity type and a second conductivity type opposite the first conductivity type; and
wherein the device further comprises an electrically-conducting connection region that provides an electrical link between the semiconductor regions, the connection region being located over the substrate and connecting one end area of a first semiconductor region having the first conductivity type to an end area of a second semiconductor region having the second conductivity type.

10. The device according to claim 9 , wherein the connection region is coated with the insulating material and comprises a metal track parallel to the first and second semiconductor regions and connected to the end areas via vertical electrical links.

11. The device according to claim 3 , wherein the insulating regions are disposed in parallel and the assembly of thermocouples is located in the substrate and comprises parallel semiconductor regions running in the substrate, two neighboring semiconductor regions having opposite conductivity types and being separated by an insulating region.

12. The device according to claim 3 , wherein the insulating regions are disposed in parallel and the assembly of thermocouples comprises first parallel semiconductor regions and second parallel semiconductor regions, the first parallel semiconductor regions all running in the substrate, and each being separated from a neighbor first semiconductor region by an insulating region, and the second parallel semiconductor regions all running respectively within the parallel insulating regions.

13. The device according to claim 3 , wherein the insulating regions are disposed in parallel, and wherein the assembly of thermocouples comprises, on top of each insulating region, at least one pair of semiconductor regions coated with the insulating material, each pair of semiconductor regions having a region of the first conductivity type and a region of the second conductivity type.

14. The device according to claim 3 , wherein the substrate comprises a part covered by an insulating layer and the assembly of thermocouples comprises a plurality of parallel pairs of parallel semiconductor regions coated with the insulating material, each pair of semiconductor regions having a region of the first conductivity type and a region of the second conductivity type, the pairs running along a top surface of the insulating layer and an insulating region thicker than the insulating layer.

15. The device according to claim 3 , wherein the insulating regions are disposed in parallel and the assembly of thermocouples comprises a pair of semiconductor regions coated with the insulating material on top of each insulating region, each pair of semiconductor regions having a region of the first conductivity type and a region of the second conductivity type.

16. The device according to claim 3 , wherein the insulating regions are disposed in parallel and the assembly of thermocouples comprises parallel semiconductor regions running in the substrate, the semiconductor regions alternating between regions of the first conductivity type and regions of the second conductivity type and being separated by an insulating region, the device further comprising, on top of each insulating region, a pair of semiconductor regions coated with the insulating material, each pair of semiconductor regions having a region of the first conductivity type and a region of the second conductivity type.

17. The device according to claim 3 , wherein the insulating regions are disposed in parallel and the assembly of thermocouples comprises first parallel semiconductor regions running between the insulating regions and all having the first conductivity type, second parallel semiconductor regions running within t

Assignees

• Fornara Pascal
• Rivero Christian
• Stmicroelectronics Rousset

Inventors

• Fornara Pascal
• Rivero Christian

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H01L2224/16225

  Electricity · mapped topic

• H01L35/325

  Electricity · mapped topic

• H01L2924/15311

  Electricity · mapped topic

• H01L35/32

  Electricity · mapped topic