Production method for deposition mask and deposition mask

US9844835B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9844835-B2
Application numberUS-201514713519-A
CountryUS
Kind codeB2
Filing dateMay 15, 2015
Priority dateNov 15, 2012
Publication dateDec 19, 2017
Grant dateDec 19, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

To provide a production method including: a first step of forming a mask member in which a resin film and a magnetic metal member, which has first through-holes and second through-holes, are brought into close contact; a second step in which a peripheral edge of the magnetic metal member is bonded to one end face of a frame; and a third step in which a portion of the film in each first through-hole is irradiated with laser light to form an opening pattern, and a portion of the film in each second through-hole is irradiated with laser light to form a mask-side alignment mark.

First claim

Opening claim text (preview).

What is claimed is: 1. A production method for a deposition mask for forming a plurality of thin-film patterns on a substrate, the production method comprising: a first step of forming a mask member in which a resin film and a magnetic metal member, which has a plurality of first and second through-holes formed at positions respectively corresponding to the plurality of thin-film patterns and a plurality of substrate-side alignment marks preliminarily formed on the substrate, are brought into close contact with each other, each of the first and second through-holes having a shape and dimension greater those that of the thin-film pattern, and each of the second through-holes having a shape and dimension greater than those of the substrate-side alignment mark; a second step in which the mask member is stretched on one end face of a frame having an opening enclosing the plurality of first and second through-holes of the magnetic metal member, and a peripheral edge of the magnetic metal member is bonded to the end face of the frame; and a third step in which a portion of the film at the position corresponding to the thin-film pattern in each of the first through-holes is irradiated with laser light to form an opening pattern having a shape and dimension the same as those of the thin-film pattern, and a portion of the film at the position corresponding to the substrate-side alignment mark in each of the second through-holes is irradiated with laser light to form a mask-side alignment mark. 2. The production method for a deposition mask according to claim 1 , wherein the third step comprises the steps of: forming each of the opening patterns at the portion of the film in the corresponding first through-hole by moving an irradiated position of the laser light by a predetermined distance in a stepwise manner, and reading and storing a coordinate of each opening pattern in an X-Y plane; reading the stored coordinates of the opening patterns to calculate an average value, and calculating a coordinate at a center of an opening-pattern formation region in which the plurality of opening patterns is formed; and forming each of the mask-side alignment marks at the position in the corresponding second through-hole, the position being apart from the calculated coordinates at the center, serving as a reference, by a particular distance. 3. The production method for a deposition mask according to claim 1 , wherein the third step comprises the steps of: forming the mask-side alignment mark at the portion of the film in a second through-hole selected from the plurality of second through-holes; and forming each of the opening patterns at the portion of the film in the corresponding first through-hole by moving an irradiated position of the laser light by a predetermined distance in a stepwise manner with the formed mask-side alignment mark being used as a reference, and forming the mask-side alignment marks other than the mask-side alignment mark in the selected second through-hole at the portions of the film in the second through-holes other than the selected second through-hole. 4. The production method for a deposition mask according to claim 1 , wherein the plurality of first through-holes has a rectangular shape and is disposed on the magnetic metal member in a matrix at regular intervals, and each of the plurality of opening patterns is formed in the corresponding first through-hole. 5. The production method for a deposition mask according to claim 1 , wherein the plurality of first through-holes has a stripe shape and is disposed on the magnetic metal member in parallel at regular intervals, and each of the plurality of opening patterns has a stripe shape and is formed in the corresponding first through-hole.

Assignees

Inventors

Classifications

  • Operations & Transport · mapped topic

  • involving non-metallic material, e.g. isolators · CPC title

  • Operations & Transport · mapped topic

  • Operations & Transport · mapped topic

  • Observing, e.g. monitoring, the workpiece · CPC title

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Frequently asked questions

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What does patent US9844835B2 cover?
To provide a production method including: a first step of forming a mask member in which a resin film and a magnetic metal member, which has first through-holes and second through-holes, are brought into close contact; a second step in which a peripheral edge of the magnetic metal member is bonded to one end face of a frame; and a third step in which a portion of the film in each first through-…
Who is the assignee on this patent?
V Tech Co Ltd
What technology area does this patent fall under?
Primary CPC classification C23C14/042. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 19 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).