Methods of calibrating linear-logarithmic image sensors

Patent metadata

Field	Value
Publication number	US-9843750-B2
Application number	US-201414224198-A
Country	US
Kind code	B2
Filing date	Mar 25, 2014
Priority date	Mar 25, 2014
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

Methods of calibrating a linear-logarithmic image sensor pixel include performing a reset of the pixel in advance of establishing a leakage current between a photodiode and a floating diffusion region of the pixel. A first voltage of the floating diffusion region is then read through a source follower and selection transistor, after the leakage is terminated. A step is then performed to transfer charge between the photodiode and the floating diffusion region of the pixel so that a voltage of a cathode of the photodiode is increased. Thereafter, a second voltage of the floating diffusion region is read. The first and second read voltages are then used to perform a calibration operation. These steps may be repeated to establish another leakage current of different duration/magnitude and yield third and fourth read voltages, which support further calibration.

First claim

That which is claimed is:

1. A method of calibrating a linear-logarithmic image sensor pixel, comprising:
performing a reset of the pixel in advance of establishing a leakage current between a photodiode and a floating diffusion region of the pixel that is allowed to fluctuate in voltage by an amount proportional to a magnitude of the leakage current;
reading a first voltage of the floating diffusion region after terminating the leakage current and then, without resetting the floating diffusion region, transferring charge between the photodiode and the floating diffusion region of the pixel so that a voltage of a cathode of the photodiode is changed and a voltage of the floating diffusion region is changed relative to the first voltage; and
then, without resetting the floating diffusion region and after terminating said transferring charge, reading a second voltage of the floating diffusion region.

2. The method of claim 1 , wherein said performing a reset comprises turning on a totem pole arrangement of a reset transistor and a transfer transistor so that the cathode of the photodiode can be pulled-down to a voltage of the floating diffusion region; wherein said establishing a leakage current comprises establishing the leakage current while the reset transistor is turned off; and wherein said transferring comprises transferring charge between the photodiode and the floating diffusion region of the pixel so that the voltage of the cathode is increased.

3. The method of claim 2 , wherein a source terminal of the transfer transistor is electrically connected to the cathode of the photodiode and a source terminal of the reset transistor is electrically connected to the floating diffusion region; and wherein said performing a reset comprises turning on the reset and transfer transistors so that the cathode of the photodiode can be pulled-down to a voltage of a drain terminal of the reset transistor.

4. The method of claim 2 , wherein said reading a first voltage is performed while the reset and transfer transistors are turned off.

5. The method of claim 4 , wherein said reading a first voltage is followed by turning on the transfer transistor during said transferring charge between the photodiode and the floating diffusion region and then turning off the transfer transistor during said reading a second voltage.

6. The method of claim 2 , wherein said terminating the leakage current comprises terminating the leakage current by completely turning off the transfer transistor during said reading the first voltage; and wherein said terminating said transferring charge comprises terminating said transferring charge by completely turning off the transfer transistor during said reading the second voltage.

7. A method of calibrating a linear-logarithmic image sensor pixel, comprising:
performing a first reset of the pixel in advance of establishing a first leakage current between a photodiode and a floating diffusion region of the pixel that is allowed to fluctuate in voltage by an amount proportional to a magnitude of the first leakage current;
reading a first voltage of the floating diffusion region after terminating the first leakage current and then, without resetting the floating diffusion region, transferring a first quantity of charge between the photodiode and the floating diffusion region of the pixel so that a voltage of a cathode of the photodiode is increased and a voltage of the floating diffusion region is changed relative to the first voltage;
then, without resetting the floating diffusion region and after terminating said transferring a first quantity of charge, reading a second voltage of the floating diffusion region; then
performing a second reset of the pixel in advance of establishing a second leakage current between a photodiode and floating diffusion region of the pixel that is allowed to fluctuate in voltage by an amount proportional to a magnitude of the second leakage current;
reading a third voltage of the floating diffusion region after terminating the second leakage current and then, without resetting the floating diffusion region, transferring a second quantity of charge between the photodiode and the floating diffusion region of the pixel; and
then, without resetting the floating diffusion region and after terminating said transferring a second quantity of charge, reading a fourth voltage of the floating diffusion region.

8. The method of claim 7 , wherein the first and second quantities of charge are unequal.

9. The method of claim 8 , wherein a duration of said transferring a second quantity of charge is greater than a duration of said transferring a first quantity of charge or vice versa.

10. The method of claim 8 , wherein said performing a first reset comprises turning on a totem pole arrangement of a reset transistor and a transfer transistor within the pixel so that a voltage of the cathode of the photodiode can be equilibrated to a voltage of the floating diffusion region.

11. The method of claim 10 , wherein a source terminal of the transfer transistor is electrically connected to the cathode of the photodiode and a source terminal of the reset transistor is electrically connected to the floating diffusion region; and wherein said performing a first reset comprises turning on the reset and transfer transistors so that the cathode of the photodiode can be pulled-down to a voltage of a drain terminal of the reset transistor.

12. The method of claim 10 , wherein said terminating the first leakage current comprises terminating the first leakage current by completely turning off the transfer transistor during said reading the first voltage; and wherein said terminating said transferring a first quantity of charge comprises terminating said transferring a first quantity of charge by completely turning off the transfer transistor during said reading the second voltage.

13. The method of claim 11 , wherein said terminating the first leakage current comprises terminating the first leakage current by completely turning off the transfer transistor during said reading the first voltage; and wherein said terminating said transferring a first quantity of charge comprises terminating said transferring a first quantity of charge by completely turning off the transfer transistor during said reading the second voltage.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yaffe Yoel
• Jakobson Claudio G
• Prazot Shemi
• Hizi Uzi

Classifications

• H04N25/671 Primary

  for non-uniformity detection or correction · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/583

  with different integration times · CPC title

• H04N25/573

  the logarithmic type · CPC title

• H04N17/002 Primary

  for television cameras · CPC title