Gate drivers for stacked transistor amplifiers

Patent metadata

Field	Value
Publication number	US-9843293-B1
Application number	US-201615268275-A
Country	US
Kind code	B1
Filing date	Sep 16, 2016
Priority date	Sep 16, 2016
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

First claim

The invention claimed is:

1. A circuital arrangement comprising:
a transistor stack configured to operate as an amplifier, the transistor stack comprising a plurality of stacked transistors comprising an input transistor and an output transistor; the transistor stack configured to operate between a first supply voltage coupled to the output transistor and a reference voltage coupled to the input transistor;
a first resistive ladder network comprising a plurality of series connected resistors coupled between a second supply voltage and the reference voltage, the resistive ladder network defining low impedance gate bias voltage nodes between any two connected resistors of the first series connected resistors;
a second resistive ladder network comprising a plurality of series connected resistors coupled between the second supply voltage and the reference voltage, the resistive ladder network defining high impedance gate bias voltage nodes between any two connected resistors of the second series connected resistors; and
one or more switches configured to selectively couple one of the low impedance gate bias voltage nodes and the high impedance gate bias voltage nodes to gates of transistors of the plurality of stacked transistors except the input transistor.

2. The circuital arrangement according to claim 1 , further comprising one or more gate capacitors each connected between a gate of a transistor of the plurality of stacked transistors except the input transistor, wherein the each gate capacitor is configured to allow a gate voltage at the gate to vary along with a radio frequency (RF) voltage at a drain of the transistor.

3. The circuital arrangement according to claim 2 , wherein the one or more gate capacitors are configured to substantially equalize an output RF voltage at a drain of the output transistor across the plurality of stacked transistors.

4. The circuital arrangement according to claim 1 or claim 2 , wherein:
the circuital arrangement is configured to operate in at least a first mode and a second mode,
during operation in the first mode, the one or more switches couple the low impedance gate bias voltage nodes to the gates, thereby presenting bias voltages at low impedances to the gates, and
during operation in the second mode, the one or more switches couple the high impedance gate bias voltage nodes to the gates, thereby presenting bias voltages at high impedances to the gates.

5. The circuital arrangement according to claim 4 , wherein the bias voltages presented at the gates during operation in the first mode and in the second mode are substantially equal.

6. The circuital arrangement according to claim 4 , wherein the bias voltages presented at the gates during operation in the first mode and in the second mode are different.

7. The circuital arrangement according to claim 6 , wherein the bias voltages presented at the gates during operation in the first mode are larger than the bias voltages presented during operation in the second mode.

8. The circuital arrangement according to claim 7 , wherein a difference in the bias voltage presented at a gate of any of the plurality of transistors except the input transistor between operation in the first mode and second mode is a fixed voltage value.

9. The circuital arrangement according to claim 8 , wherein the fixed voltage value is approximately 0.5 V.

10. The circuital arrangement according to claim 6 , wherein a bias voltage presented at a gate of a transistor, directly connected to the input transistor, during operation in the second mode is substantially equal to 0 V.

11. The circuital arrangement according to claim 4 , wherein the gate bias voltages presented to the gates during operation in the first mode is according to a desired first distribution of the first supply voltage across the plurality of stacked transistors, and the gate bias voltages presented to the gates during operation in the second mode is according to a desired second distribution of the first supply voltage across the plurality of stacked transistors.

12. The circuital arrangement according to claim 11 , wherein the first distribution and the second distribution is a same distribution.

13. The circuital arrangement according to claim 11 , wherein the first distribution and the second distribution are different distributions.

14. The circuital arrangement according to claim 13 , wherein the second distribution is a distribution substantially across a limited number of transistors of the plurality of transistors.

15. The circuital arrangement according to claim 14 , wherein the limited number of transistors excludes the input transistor and a transistor of the plurality of transistors directly coupled to the input transistor.

16. The circuital arrangement according to claim 1 , wherein the second supply voltage is the first supply voltage.

17. The circuital arrangement according to claim 4 , wherein during operation in the second mode, a bias voltage to a gate of the input transistor is substantially equal to 0 V.

18. The circuital arrangement according to claim 4 , wherein during operation in the second mode, a bias voltage to a gate of the input transistor is less than 0 V.

19. The circuital arrangement according to claim 4 , wherein a ratio of a current through the first resistive ladder network during the first mode of operation and a current through the second resistive ladder network during the second mode of operation is equal to or larger than 100.

20. The circuital arrangement according to claim 19 , wherein the current through the second resistive ladder network is equal to, or less than, 3 μA.

21. The circuital arrangement according to claim 4 , wherein the first resistive ladder network further comprises a switch.

22. The circuital arrangement according to claim 21 , wherein the switch is connected in series between the voltage reference and a last resistor of the plurality of series connected resistors of the first resistive ladder network.

23. The circuital arrangement according to claim 21 , wherein the switch of the first resistive ladder network is configured to remove a current conduction path through the first resistive ladder network during the second mode of operation.

24. The circuital arrangement according to claim 21 , wherein the first resistive ladder network further comprises a transistor connected in series between two adjacent resistors of the plurality of resistors, and wherein a gate of the transistor is connected to a fixed voltage.

25. The circuital arrangement according to claim 24 , wherein during operation in the second mode, the transistor operates as a voltage limiter so as to limit a voltage at a node of the first resistive ladder network coupled to the transistor to a level of the fixed voltage.

26. The circuital arrangement according to claim 4 , wherein the first and/or the second resistive ladder network comprise a series connected transistor configured as a diode, the series connected transistor having same characteristic response as a characteristic response of the plurality of stacked transistors.

Assignees

• Peregrine Semiconductor Corp

Inventors

• Wagh Poojan
• Pal Kashish
• Englekirk Robert Mark
• Ranta Tero Tapio
• Bargroff Keith
• Willard Simon Edward

Classifications

• H03F2200/18

  the bias of the gate of a FET being controlled by a control signal · CPC title

• H03F1/223

  with MOSFET's · CPC title

• H03F3/193 Primary

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F2200/21

  Bias resistors are added at the input of an amplifier · CPC title

• H03F1/0261

  with control of the polarisation voltage or current, e.g. gliding Class A · CPC title