Semiconductor laser light source
US-2015263487-A1 · Sep 17, 2015 · US
US9843164B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9843164-B2 |
| Application number | US-201615006733-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 26, 2016 |
| Priority date | Jan 27, 2015 |
| Publication date | Dec 12, 2017 |
| Grant date | Dec 12, 2017 |
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In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.
Opening claim text (preview).
What is claimed is: 1. A laser apparatus comprising: a beam emitter having first and second opposed surfaces; a first electrode mount disposed proximate the first surface of the beam emitter; a thermal bonding layer disposed at an interface between the first electrode mount and the first surface of the beam emitter, the thermal bonding layer (i) improving thermal conduction between the first electrode mount and the beam emitter, and (ii) comprising a thermal bonding material; and disposed along the interface between the first electrode mount and the first surface of the beam emitter, a sealing material for preventing or retarding movement of the thermal bonding material out of the thermal bonding layer, wherein (i) the sealing material is electrically conductive, (ii) the sealing material directly contacts at least a portion of an external surface of the first electrode mount, (iii) the sealing material directly contacts at least a portion of an external surface of the beam emitter, and (iv) the sealing material covers an entirety of the thermal bonding layer at the interface between the first electrode mount and the first surface of the beam emitter, whereby the thermal bonding layer is unexposed and surrounded on all sides by the sealing material, the first electrode mount, and the beam emitter. 2. The laser apparatus of claim 1 , wherein the thermal bonding material comprises indium. 3. The laser apparatus of claim 1 , wherein the sealing material comprises at least one of copper, aluminum, nickel, or chromium. 4. The laser apparatus of claim 1 , wherein the sealing material directly contacts an entirety of the external surface of the first electrode mount that is not in contact with the thermal bonding layer. 5. The laser apparatus of claim 1 , wherein the sealing material directly contacts an entirety of the external surface of the beam emitter except for (i) portions thereof in contact with the thermal bonding layer and (ii) a portion of the beam emitter from which one or more beams are emitted. 6. The laser apparatus of claim 1 , further comprising: a second electrode mount (i) disposed proximate the second surface of the beam emitter and (ii) electrically insulated from the first electrode mount except for any electrical connection through the beam emitter; a second thermal bonding layer disposed along at least a portion of an interface between the second electrode mount and the second surface of the beam emitter, the second thermal bonding layer (i) improving thermal conduction between the second electrode mount and the beam emitter, and (ii) comprising a second thermal bonding material; and disposed along at least a portion of the interface between the second electrode mount and the second surface of the beam emitter, a second sealing material for preventing or retarding movement of the second thermal bonding material out of the second thermal bonding layer. 7. The laser apparatus of claim 6 , wherein (i) the second sealing material is electrically conductive, (ii) the second sealing material directly contacts at least a portion of an external surface of the second electrode mount, (iii) the second sealing material directly contacts at least a portion of an external surface of the beam emitter, and (iv) the second sealing material covers an entirety of the second thermal bonding layer at the interface between the second electrode mount and the second surface of the beam emitter, whereby the second thermal bonding layer is unexposed and surrounded on all sides by the second sealing material, the second electrode mount, and the beam emitter. 8. The laser apparatus of claim 6 , wherein the second thermal bonding material comprises indium. 9. The laser apparatus of claim 6 , wherein the second sealing material comprises at least one of copper, aluminum, nickel, or chromium. 10. The laser apparatus of claim 1 , wherein the beam emitter comprises a diode bar emitting a plurality of discrete beams. 11. A wavelength beam combining laser system comprising: a beam emitter emitting a plurality of discrete beams and having first and second opposed surfaces; focusing optics for focusing the plurality of beams onto a dispersive element; a dispersive element for receiving and dispersing the received focused beams; a partially reflective output coupler positioned to receive the dispersed beams, transmit a portion of the dispersed beams therethrough as a multi-wavelength output beam, and reflect a second portion of the dispersed beams back toward the dispersive element; a first electrode mount disposed proximate the first surface of the beam emitter; a thermal bonding layer disposed at an interface between the first electrode mount and the first surface of the beam emitter, the thermal bonding layer (i) improving thermal conduction between the first electrode mount and the beam emitter, and (ii) comprising a thermal bonding material; and disposed along at least a portion of the interface between the first electrode mount and the first surface of the beam emitter, a sealing material for preventing or retarding movement of the thermal bonding material out of the thermal bonding layer, wherein (i) the sealing material is electrically conductive, (ii) the sealing material directly contacts at least a portion of an external surface of the first electrode mount, (iii) the sealing material directly contacts at least a portion of an external surface of the beam emitter, and (iv) the sealing material covers an entirety of the thermal bonding layer at the interface between the first electrode mount and the first surface of the beam emitter, whereby the thermal bonding layer is unexposed and surrounded on all sides by the sealing material, the first electrode mount, and the beam emitter. 12. The laser system of claim 11 , wherein the dispersive element comprises a diffraction grating. 13. The laser system of claim 11 , wherein the thermal bonding material comprises indium. 14. The laser system of claim 11 , wherein the sealing material comprises at least one of copper, aluminum, nickel, or chromium. 15. The laser system of claim 11 , further comprising: a second electrode mount (i) disposed proximate the second surface of the beam emitter and (ii) electrically insulated from the first electrode mount except for any electrical connection through the beam emitter; a second thermal bonding layer disposed along at least a portion of an interface between the second electrode mount and the second surface of the beam emitter, the second thermal bonding layer (i) improving thermal conduction between the second electrode mount and the beam emitter, and (ii) comprising a second thermal bonding material; and disposed along at least a portion of the interface between the second electrode mount and the second surface of the beam emitter, a second sealing material for preventing or retarding movement of the second thermal bonding material out of the second thermal bonding layer. 16. The laser system of claim 11 , wherein the sealing material directly contacts an entirety of the external surface of the first electrode mount that is not in contact with the thermal bonding layer. 17. The laser system of claim 11 , wherein the beam emitter comprises a diode bar. 18. The laser system of claim 11 , wherein the sealing material directly contacts an entirety of the external surface of the beam emitter except for (i) portions thereof in contact with the thermal bonding layer and (ii) a portion of the beam emitter from which the plurality of beams are emitted. 19. T
using a diffraction grating · CPC title
which comprises an additional resonator · CPC title
using an intermediate compound, e.g. a glue or solder · CPC title
with an external cavity or using internal filters, e.g. Talbot filters · CPC title
Array arrangements, e.g. constituted by discrete laser diodes or laser bar (H01S5/42 takes precedence) · CPC title
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