Electronic devices with sapphire-coated substrates

Patent metadata

Field	Value
Publication number	US-9843014-B2
Application number	US-201615042453-A
Country	US
Kind code	B2
Filing date	Feb 12, 2016
Priority date	Feb 20, 2015
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

An electronic device may have a display that is protected by a transparent cover layer. The transparent cover layer may include a laser-annealed sapphire coating on the outer surface of a glass substrate or other transparent substrate. The sapphire coating may provide the display with a hard, scratch-resistant outer surface. The sapphire coating may be formed by coating a glass substrate with a thin film of amorphous aluminum oxide. The aluminum oxide thin film may be locally heated to transform the amorphous aluminum oxide into alpha-phase aluminum oxide (sapphire). Local heating may be achieved by laser annealing the aluminum oxide coating with a carbon dioxide laser. The laser may produce laser light having a wavelength that is absorbed in the aluminum oxide coating without being absorbed by the glass substrate so that the glass substrate is not damaged during the laser annealing process.

First claim

What is claimed is:

1. A method for forming a display cover layer, comprising:
coating a surface of a transparent substrate with aluminum oxide; and
locally heating the aluminum oxide to transform the aluminum oxide into sapphire, wherein locally heating the aluminum oxide comprises locally heating the aluminum oxide without heating the transparent substrate.

2. The method defined in claim 1 wherein the aluminum oxide comprises amorphous aluminum oxide and wherein locally heating the aluminum oxide comprises laser annealing the amorphous aluminum oxide to transform the amorphous aluminum oxide into sapphire.

3. The method defined in claim 1 wherein the transparent substrate comprises glass.

4. The method defined in claim 1 wherein the transparent substrate comprises polymer.

5. The method defined in claim 1 wherein coating the surface of the transparent substrate with aluminum oxide comprises coating the surface of the transparent substrate with aluminum oxide using coating equipment selected from the group consisting of: chemical vapor deposition equipment, physical vapor deposition equipment, sputtering equipment, electron beam evaporation equipment, thermal evaporation equipment, atomic layer deposition equipment, aerosol jet equipment, plasma deposition equipment, and thermal spraying equipment.

6. The method defined in claim 1 wherein locally heating the aluminum oxide comprises applying laser light to the aluminum oxide using a carbon dioxide laser.

7. The method defined in claim 6 wherein the laser light produced by the carbon dioxide laser has a wavelength of 10.6 microns.

8. The method defined in claim 1 wherein coating the surface of the transparent substrate with aluminum oxide comprises forming a coating of aluminum oxide on the surface of the transparent substrate, wherein the coating has a thickness between 0.01 microns and 10 microns.

9. The method defined in claim 1 wherein locally heating the aluminum oxide comprises raising a temperature of the aluminum oxide to above 1000° Celsius.

10. A method for forming a display, comprising:
forming a film on a glass substrate, wherein the film includes aluminum oxide and aluminum oxynitride;
laser annealing the aluminum oxide to form a sapphire coating on the glass substrate; and
assembling display layers with the glass substrate such that the glass substrate is interposed between the sapphire coating and the display layers.

11. The method defined in claim 10 wherein laser annealing the aluminum oxide comprises raising a temperature of the aluminum oxide to above 1000° Celsius.

12. The method defined in claim 10 wherein the film has a thickness between 0.01 microns and 10 microns.

13. The method defined in claim 10 wherein laser annealing the aluminum oxide comprises laser annealing the aluminum oxide with a carbon dioxide laser.

14. The method defined in claim 10 wherein laser annealing the aluminum oxide comprises applying laser light to the aluminum oxide, where the laser light has a wavelength that is absorbed by the aluminum oxide and that is not absorbed by the glass substrate.

15. The method defined in claim 14 wherein the wavelength is between 9 and 11 microns.

16. The method defined in claim 10 wherein laser annealing the aluminum oxide comprises heating the aluminum oxide without heating the glass substrate.

Assignees

• Apple Inc

Inventors

• Xu Tingjun
• Zhao Xianwei
• Bae Wookyung
• Kang Sunggu
• Zhong John Z

Classifications

• G02F2001/133331

  Physics · mapped topic

• H01L51/524 Primary

  Electricity · mapped topic

• C23C14/081 Primary

  of aluminium, magnesium or beryllium · CPC title

• G02F1/133308

  Support structures for LCD panels, e.g. frames or bezels · CPC title

• C23C14/5813

  using lasers · CPC title