Film-forming composition, film formed thereby, and method for manufacturing organic semiconductor element using same

Patent metadata

Field	Value
Publication number	US-9842993-B2
Application number	US-201414905464-A
Country	US
Kind code	B2
Filing date	Jul 14, 2014
Priority date	Jul 19, 2013
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A film-forming composition according to the present invention include fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent.

In the general formula (1), R 1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R 2 each independently represents C 1 -C 15 straight, C 3 -C 15 branched or C 3 -C 15 cyclic fluorine-containing hydrocarbon gr which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

First claim

The invention claimed is:

1. A film-forming composition for forming a fluororesin film on an organic semiconductor film, comprising:
a fluororesin having a repeating unit of the general formula (1)

where R 1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R 2 each independently represents a C 1 -C 15 straight, C 3 -C 15 branched or C 3 -C 15 cyclic fluorine-containing hydrocarbon group in which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom; and
a fluorine-containing solvent,
wherein the fluorine-containing solvent includes either a fluorine-containing hydrocarbon or a fluorine-containing ether;
wherein the fluorine-containing hydrocarbon is a C 4 -C 8 straight, branched or cyclic hydrocarbon in which at least one hydrogen atom is replaced by a fluorine atom; and
wherein the fluorine-containing ether is a fluorine-containing ether of the general formula (2)
R 3 —O—R 4   (2)

where R 3 and R 4 each independently represent a C 1 -C 15 straight, C 3 -C 15 branched or C 3 -C 15 cyclic hydrocarbon group; and at least one hydrogen atom of the ether is replaced by a fluorine atom.

2. The film-forming composition according to claim 1 , wherein the fluorine-containing solvent further includes a fluorine-containing alcohol of the general formula (3)
R 5 —OH  (3)

where R 5 represents a C 1 -C 15 straight, C 3 -C 15 branched or C 3 -C 15 cyclic hydrocarbon group in which at least one hydrogen atom is replaced by a fluorine atom.

3. The film-forming composition according to claim 1 , wherein the fluororesin has a fluorine content of 30 to 65 mass %.

4. The film-forming composition according to claim 1 , wherein the fluorine-containing solvent has a fluorine content of 50 to 70 mass %.

5. A fluororesin film formed by applying the film-forming composition according to claim 1 onto an organic semiconductor film.

6. A manufacturing method of an organic semiconductor element, comprising:
applying the film-forming composition according to claim 1 onto an organic semiconductor film, thereby forming a fluororesin film;
patterning the fluororesin film; and
etching the organic semiconductor film into a pattern.

7. The manufacturing method according to claim 6 , wherein the patterning of the fluororesin film is performed by a photolithography process.

8. The manufacturing method according to claim 6 , wherein the patterning of the fluororesin film is performed by a print process.

9. The manufacturing method according to claim 6 , wherein the patterning of the fluororesin film is performed by an imprint process.

10. The manufacturing method according to claim 6 , wherein the etching of the organic semiconductor film is performed by a wet etching process using an aromatic solvent.

11. The manufacturing method according to claim 10 , wherein the aromatic solvent is benzene, toluene or xylene.

12. The manufacturing method according to claim 6 , further comprising: removing the fluororesin film.

13. The manufacturing method according to claim 12 , wherein the removing of the fluororesin film is performed by dissolving the fluororesin film in a fluorine-containing solvent.

14. The manufacturing method according to claim 6 , wherein the fluorine-containing solvent further includes a fluorine-containing alcohol of the general formula (3)
R 5 —OH  (3)

where R 5 represents a C 1 -C 15 straight, C 3 -C 15 branched or C 3 -C 15 cyclic hydrocarbon group in which at least one hydrogen atom is replaced by a fluorine atom.

15. An organic semiconductor element manufactured by the manufacturing method according to claim 6 .

16. An organic electroluminescence display comprising the organic semiconductor element according to claim 15 .

17. A liquid crystal display comprising the organic semiconductor element according to claim 15 .

Assignees

• Central Glass Co Ltd

Inventors

• Terui Yoshiharu
• Komoriya Haruhiko
• Kobayashi Fumito
• Hara Yukari
• Hara Ikunari

Classifications

• H01L51/0052

  Electricity · mapped topic

• C09D133/16 Primary

  Homopolymers or copolymers of esters containing halogen atoms · CPC title

• C08K5/06

  Ethers; Acetals; Ketals; Ortho-esters · CPC title

• H01L51/0018 Primary

  Electricity · mapped topic

• G03F7/0048

  characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title