Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9842943-B2
Application number	US-201615243068-A
Country	US
Kind code	B2
Filing date	Aug 22, 2016
Priority date	Aug 25, 2015
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

Provided is a method for manufacturing a semiconductor device including a film to be treated having a high flatness. A semiconductor substrate having a surface and including a first region and a second region on the surface is prepared, the first region being a region in which a plurality of first level difference portions are formed, the second region being a region in which a plurality of second level difference portions arranged more sparsely than the plurality of first level difference portions are formed, or a region in which no level difference portion is formed. A photosensitive film is formed on a portion of the second region to surround a periphery of the first region as seen in plan view. An applied film having flowability is formed to cover the first region and the photosensitive film. A portion of the applied film at least on the first region is removed.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a main surface and including a first region and a second region on the main surface, the first region being a region in which a plurality of first level difference portions are formed, the second region being a region in which a plurality of second level difference portions arranged more sparsely than the plurality of first level difference portions are formed, or a region in which no level difference portion is formed; forming a photosensitive film at least on a portion of the second region to surround a periphery of the first region as seen in plan view; forming an applied film having flowability to cover the first region and the photosensitive film, after the step of forming the photosensitive film; and removing a portion of the applied film at least on the first region; wherein in the step of preparing the semiconductor substrate, the semiconductor substrate having a coating film formed thereon is prepared, the coating film covering at least the first level difference portions, and in the step of removing the applied film, at least portions of the applied film and the coating film are removed.

2. A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a main surface and including a first region and a second region on the main surface, the first region being a region in which a plurality of first level difference portions are formed, the second region being a region in which a plurality of second level difference portions arranged more sparsely than the plurality of first level difference portions are formed, or a region in which no level difference portion is formed; forming a photosensitive film at least on a portion of the second region to surround a periphery of the first region as seen in plan view; forming an applied film having flowability to cover the first region and the photosensitive film, after the step of forming the photosensitive film; and removing a portion of the applied film at least on the first region; wherein in the step of forming the applied film, the applied film is formed to cover at least the first level difference portions, and in the step of removing the applied film, at least portions of the applied film and the first level difference portions are removed.

3. The method for manufacturing the semiconductor device according to claim 1 , wherein, in the step of forming the photosensitive film, the photosensitive film is cured by heat treatment or ultraviolet curing treatment.

4. The method for manufacturing the semiconductor device according to claim 1 , further comprising the step of removing the photosensitive film and the applied film remaining on the main surface of the semiconductor substrate, after the step of removing the applied film.

5. The method for manufacturing the semiconductor device according to claim 1 , wherein, in the step of forming the photosensitive film, the photosensitive film is formed to continuously surround an entire periphery of the first region as seen in plan view.

6. The method for manufacturing the semiconductor device according to claim 5 , wherein, in the step of forming the photosensitive film, the photosensitive film is formed on the second region.

7. The method for manufacturing the semiconductor device according to claim 1 , wherein, in the step of forming the photosensitive film, the photosensitive film is formed to intermittently surround the periphery of the first region as seen in plan view.

8. The method for manufacturing the semiconductor device according to claim 1 , wherein a film thickness of the photosensitive film is more than or equal to 1 time and less than or equal to 2 times a film thickness of the applied film.

9. The method for manufacturing the semiconductor device according to claim 8 , wherein the film thickness of the photosensitive film is more than or equal to 1 time and less than or equal to 1.5 times the film thickness of the applied film.

10. The method for manufacturing the semiconductor device according to claim 1 , wherein the applied film has a viscosity of less than or equal to 100 cP.

11. The method for manufacturing the semiconductor device according to claim 10 , wherein the applied film has a viscosity of less than or equal to 10 cP.

Assignees

• Renesas Electronics Corp

Inventors

• Umeda Daisuke

Classifications

• H10P95/064 Primary

  the removal being chemical etching · CPC title

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H01L21/32115

  Electricity · mapped topic

• H01L21/31055

  Electricity · mapped topic

• H01L29/788 Primary

  Electricity · mapped topic