Flexible array substrate structure and manufacturing method for the same

Patent metadata

Field	Value
Publication number	US-9842883-B2
Application number	US-201615033650-A
Country	US
Kind code	B2
Filing date	Feb 26, 2016
Priority date	Jan 28, 2016
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.

First claim

What is claimed is:

1. A flexible array substrate structure, comprising:
a substrate comprising a source electrode area, a drain electrode area, a common electrode area, and a channel area between the source electrode area and the drain electrode area;
a source electrode layer disposed on the source electrode area of the substrate;
a drain electrode layer disposed on the drain electrode area of the substrate;
a common electrode layer disposed on the common electrode area of the substrate;
a color film layer covered on the source electrode layer, the drain electrode layer, and the common electrode layer, and the color film layer having a via hole and an opening exposing the channel area of the substrate; and
a first transparent conductive layer disposed on the color film layer, and the first transparent conductive layer being electrically connected to the drain electrode layer by way of the via hole,
wherein there are an organic semi-conductive layer, an organic insulative layer, a second transparent conductive layer, and a gate electrode layer in the opening, the organic semi-conductive layer is disposed on the channel area of the substrate, and contacts the source electrode layer and the drain electrode layer, the organic insulative layer is disposed on the organic semi-conductive layer, the second transparent conductive layer is disposed on the organic insulative layer, the gate electrode layer is disposed on the second transparent conductive layer, and surfaces of the color film layer and the organic semi-conductive layer have hydrophobicity.

2. The flexible array substrate structure of claim 1 , wherein a protection layer is further disposed on the gate electrode layer.

3. The flexible array substrate structure of claim 1 , wherein the first transparent conductive layer and the common electrode layer construct a storage capacitor.

4. A flexible array substrate structure, comprising:
a substrate comprising a source electrode area, a drain electrode area, a common electrode area, and a channel area between the source electrode area and the drain electrode area;
a source electrode layer disposed on the source electrode area of the substrate;
a drain electrode layer disposed on the drain electrode area of the substrate;
a common electrode layer disposed on the common electrode area of the substrate;
a color film layer covered on the source electrode layer, the drain electrode layer, and the common electrode layer, and the color film layer having a via hole and an opening exposing the channel area of the substrate; and
a first transparent conductive layer disposed on the color film layer, and the first transparent conductive layer being electrically connected to the drain electrode layer by way of the via hole,
wherein there are an organic semi-conductive layer, an organic insulative layer, a second transparent conductive layer, and a gate electrode layer in the opening, the organic semi-conductive layer is disposed on the channel area of the substrate, and contacts the source electrode layer and the drain electrode layer, the organic insulative layer is disposed on the organic semi-conductive layer, the second transparent conductive layer is disposed on the organic insulative layer, and the gate electrode layer is disposed on the second transparent conductive layer.

5. The flexible array substrate structure of claim 4 , wherein a protection layer is further disposed on the gate electrode layer.

6. The flexible array substrate structure of claim 4 , wherein the first transparent conductive layer and the common electrode layer construct a storage capacitor.

7. The flexible array substrate structure of claim 4 , wherein surfaces of the color film layer and the organic semi-conductive layer have hydrophobicity.

8. A method for manufacturing a flexible array substrate structure, comprising the following steps of:
providing a substrate, and defining a source electrode area, a drain electrode area, a common electrode area, and a channel area between the source electrode area and the drain electrode area onto the substrate;
depositing an electrode layer onto the substrate, and then patterning the electrode layer to form a source electrode layer, a drain electrode layer, and a common electrode layer on the source electrode area, the drain electrode area, and the common electrode area, respectively;
forming a color film layer onto the substrate so as to cover the source electrode layer, the drain electrode layer, and the common electrode layer;
providing a via hole and an opening exposing the channel area of the substrate onto the color film layer;
forming an organic semi-conductive layer onto the channel area of the substrate in the opening, wherein the organic semi-conductive layer contacts the source electrode layer and the drain electrode layer;
forming an organic insulative layer onto the organic semi-conductive layer;
forming a first transparent conductive layer onto the color film layer, wherein the first transparent conductive layer is electrically connected to the drain electrode layer by way of the via hole;
forming a second transparent conductive layer onto the organic insulative layer; and
forming a gate electrode layer onto the second transparent conductive layer.

9. The method for manufacturing the flexible array substrate structure of claim 8 , wherein the method further comprises the following step of: forming a protection layer onto the gate electrode layer.

10. The method for manufacturing the flexible array substrate structure of claim 8 , wherein the first transparent conductive layer and the common electrode layer construct a storage capacitor.

11. The method for manufacturing the flexible array substrate structure of claim 8 , wherein the method further comprises the following step of: surface-treating a surface of the color film layer, thereby the surface of the color film layer having hydrophobicity.

12. The method for manufacturing the flexible array substrate structure of claim 8 , wherein the method further comprises the following step of: surface-treating a surface of the organic semi-conductive layer, thereby the surface of the organic semi-conductive layer having hydrophobicity.

13. The method for manufacturing the flexible array substrate structure of claim 8 , wherein the organic semi-conductive layer is formed by a spin coating, a slot-die coating, or an ink-jet printing.

Assignees

• Shenzhen China Star Optoelect

Inventors

• Xu Hongyuan

Classifications

• H01L51/107

  Electricity · mapped topic

• G02F2202/10

  semiconductor · CPC title

• H01L51/0541

  Electricity · mapped topic

• H01L51/0012

  Electricity · mapped topic

• H01L51/0558

  Electricity · mapped topic