Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents

Patent metadata

Field	Value
Publication number	US-9842733-B2
Application number	US-201414894987-A
Country	US
Kind code	B2
Filing date	May 14, 2014
Priority date	Jun 11, 2013
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.

First claim

The invention claimed is:

1. A method of preparing a chalcogen-containing solution that is hydrazine free and hydrazinium free, the method comprising:
providing a predetermined amount of a first material consisting of pure elemental chalcogen;
providing a predetermined amount of a second material consisting of pure elemental sulfur;
providing an amine solvent; and
combining the predetermined amount of the first material consisting of the pure elemental chalcogen and the predetermined amount of the second material consisting of the pure elemental sulfur in the amine solvent at ambient temperature, whereby the first material consisting of the pure elemental chalcogen and the second material consisting of the pure elemental sulfur are dissolved in the amine solvent, thereby forming a chalcogen-containing solution that is hydrazine free and hydrazinium free.

2. The method of claim 1 , whereby combining the predetermined amount of the first material consisting of the pure elemental chalcogen and the predetermined amount of the second material consisting of the pure elemental sulfur in the amine solvent is performed at a temperature below a boiling point of the amine solvent.

3. The method of claim 1 , wherein the pure elemental chalcogen is pure elemental selenium or pure elemental tellurium.

4. The method of claim 1 , wherein the amine solvent is n-butylamine.

5. The method of claim 1 , wherein an atomic ratio between the predetermined amount of the first material consisting of the pure elemental chalcogen and the predetermined amount of the second material consisting of the pure elemental sulfur is from 0.01 to 100.

6. The method of claim 1 , wherein an atomic ratio between the predetermined amount of the first material consisting of the pure elemental chalcogen and the predetermined amount of the second material consisting of the pure elemental sulfur is from 0.1 to 10.

7. The method of claim 1 , further comprising stirring, after combining, the first material consisting of the pure elemental chalcogen and the second material consisting of the pure elemental sulfur in the amine solvent.

8. The method of claim 1 , further comprising adding a predetermined amount of a third material consisting of at least one pure elemental metal to the amine solvent, wherein the pure elemental metal is selected from the group consisting of metals from Group 1 to Group 15 of the periodic table, Lanthanides, and Actinides.

9. The method of claim 1 , further comprising adding a predetermined amount of at least one metal salt to the amine solvent, wherein the metal of the metal salt is selected from the group consisting of metals from Group 1 to Group 15 of the periodic table, Lanthanides, and Actinides.

10. The method of claim 1 , further comprising adding a predetermined amount of at least one metal hydroxide to the amine solvent, wherein the metal of the metal hydroxide is selected from the group consisting of metals from Group 1 to Group 15 of the periodic table, Lanthanides, and Actinides.

11. A method for forming a chalcogen or chalcogenide containing layer on a substrate, the method comprising:
dissolving an elemental chalcogen and elemental sulfur in an amine solvent thereby forming a chalcogen-containing solution that is hydrazine free and hydrazinium free wherein the elemental chalcogen is pure elemental chalcogen, and wherein the elemental sulfur is pure elemental sulfur:
coating the chalcogen-containing solution on a substrate; drying the solution, thereby transforming the solution into a solid layer; and performing an annealing step, thereby inducing phase formation and crystallization of the solid layer, wherein performing the annealing step comprises heating to a temperature of from 400° C. to 700° C.

12. The method of claim 1 , wherein the ambient temperature is a temperature within a range of 15° C. to 30° C.

13. The method of claim 1 , wherein the ambient temperature is a temperature within a range of 20° C. to 25° C.

14. The method of claim 1 , wherein combining the predetermined amount of the first material consisting of the pure elemental chalcogen and the predetermined amount of the second material consisting of the pure elemental sulfur in the amine solvent is conducted in an absence of heating.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Esmaeil Zaghi Armin
• Vleugels Jozef Petrus Coleta

Classifications

• H10P14/3431

  Selenides · CPC title

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/3436 Primary

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title