PLZT capacitor and method to increase the dielectric constant

Patent metadata

Field	Value
Publication number	US-9842695-B2
Application number	US-201615151830-A
Country	US
Kind code	B2
Filing date	May 11, 2016
Priority date	May 11, 2016
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300° C.

First claim

We claim:

1. A ceramic-capacitor comprising:
a first electrically-conductive-layer;
a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer; and
a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer, said dielectric-layer formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125 when measured at 25 degrees Celsius, zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz).

2. The ceramic-capacitor in accordance with claim 1 wherein the dielectric-layer is deposited using an aerosol spray process.

3. The ceramic-capacitor in accordance with claim 1 wherein a first side of the dielectric-layer is in direct contact with the first electrically-conductive-layer, and a second side of the dielectric-layer opposite the first side is in direct contact with the second electrically-conductive-layer.

Assignees

• Taylor Ralph S
• Fairchild Manuel Ray
• Balachjandran Uthamalingam
• Lee Tae H
• Delphi Tech Inc

Inventors

• Taylor Ralph S
• Fairchild Manuel Ray
• Balachjandran Uthamalingam
• Lee Tae H

Classifications

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G4/1245 Primary

  containing also titanates · CPC title

• H01G4/1218 Primary

  based on titanium oxides or titanates (H01G4/1245 takes precedence) · CPC title

• H01G4/30

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• C04B2235/3227

  Lanthanum oxide or oxide-forming salts thereof · CPC title