Magnetic memory device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9842637-B2
Application number	US-201615339064-A
Country	US
Kind code	B2
Filing date	Oct 31, 2016
Priority date	Dec 10, 2015
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A magnetic memory device and a method of fabricating the same are provided. The method includes forming a first magnetic layer on a substrate, forming a tunnel barrier layer on the first magnetic layer, and forming a second magnetic layer on the tunnel barrier layer. The forming of the tunnel barrier layer includes forming a first metal oxide layer on the first magnetic layer, forming a first metal layer on the first metal oxide layer, forming a second metal oxide layer on the first metal layer, and performing a first thermal treatment process to oxidize at least a portion of the first metal layer.

First claim

What is claimed is:

1. A method of fabricating a magnetic memory device, the method of fabricating the magnetic memory device comprising:
forming a first magnetic layer on a substrate;
forming a tunnel barrier layer on the first magnetic layer; and
forming a second magnetic layer on the tunnel barrier layer,
wherein the forming of the tunnel barrier layer comprises:
forming a first metal oxide layer on the first magnetic layer;
forming a first metal layer on the first metal oxide layer;
forming a second metal oxide layer on the first metal layer; and
performing a first thermal treatment process to oxidize at least a portion of the first metal layer after the second metal oxide layer is formed.

2. The method of claim 1 , wherein the first metal layer comprises at least one among Mg, Fe, Ti, Ta, Al, W, Hf, and V.

3. The method of claim 1 , wherein the first metal oxide layer and the second metal oxide layer comprise a same material, and
wherein the same material comprises at least one among magnesium oxide, titanium oxide, aluminum oxide, magnesium-zinc oxide, and magnesium-boron oxide.

4. The method of claim 1 , wherein the first metal oxide layer, the first metal layer, and the second metal oxide layer are formed in situ within a same system as that for the first thermal treatment process.

5. The method of claim 1 , wherein the first thermal treatment process is performed at a first temperature of 100 to 500° C. for 10 to 300 seconds.

6. The method of claim 5 , further comprising performing a second thermal treatment process after the forming of the second magnetic layer.

7. The method of claim 6 , wherein the second thermal treatment process is performed at a second temperature of 350 to 400° C. for 30 to 120 minutes.

8. The method of claim 1 , wherein the first metal layer is partially oxidized by the first thermal treatment process to form a first sub oxide and a second sub oxide,
the first sub oxide is formed to be in contact with the first metal oxide layer, and
the second sub oxide is formed to be in contact with the second metal oxide layer.

9. The method of claim 8 , wherein the first sub oxide and the second sub oxide are formed to have oxygen atom concentrations that are lower than those of the first metal oxide layer and the second metal oxide layer.

10. The method of claim 8 , wherein the first thermal treatment process is performed to prevent a part of the first metal layer between the first sub oxide and the second sub oxide from being oxidized.

11. The method of claim 1 , wherein the performing the first thermal treatment process comprises oxidizing the first metal layer to form a sub oxide whose oxygen atom concentration is lower than those of the first metal oxide layer and the second metal oxide layer.

12. The method of claim 1 , wherein the first metal oxide layer, the second metal oxide layer and the first metal layer contain a same metal element.

13. The method of claim 12 , wherein the same metal element is magnesium.

14. The method of claim 1 , wherein each of the first metal oxide layer and the second metal oxide layer contain a first metal element, and
the first metal layer contains a second metal element different from the first metal element.

15. The method of claim 14 , wherein the first metal element is magnesium, and
the second metal element is one among Fe, Ti, Ta, Al, W, Hf, and V.

16. The method of claim 1 , further comprising forming a capping oxide layer on the second magnetic layer.

17. The method of claim 1 , wherein the forming of the tunnel barrier layer further comprises forming a second metal layer on the second metal oxide layer and forming a third metal oxide layer on the second metal layer, before the first thermal treatment process.

18. The method of claim 17 , wherein a sum of thicknesses of the first metal layer and the second metal layer is between 0.1 to 0.2 times that of the tunnel barrier layer.

19. A method of fabricating a magnetic memory device, the method of fabricating the magnetic memory device comprising:
forming a first magnetic layer on a substrate;
forming a tunnel barrier layer on the first magnetic layer; and
forming a second magnetic layer on the tunnel barrier layer,
wherein the forming of the tunnel barrier layer comprises:
forming a first metal oxide layer on the first magnetic layer;
forming a first metal layer on the first metal oxide layer;
forming a second metal oxide layer on the first metal layer; and
performing a first thermal treatment process to oxidize at least a portion of the first metal layer,

wherein a first metal layer thickness ranges from 0.1 to 0.2 times a thickness of the tunnel barrier layer.

20. A method of fabricating a magnetic memory device, the method of fabricating the magnetic memory device comprising:
forming a first magnetic layer on a substrate;
forming a tunnel barrier layer on the first magnetic layer; and
forming a second magnetic layer on the tunnel barrier layer,
wherein the forming of the tunnel barrier layer comprises:
forming a first metal oxide layer on the first magnetic layer;
forming a first metal layer on the first metal oxide layer;
forming a second metal oxide layer on the first metal layer; and

performing a first thermal treatment process to oxidize at least a portion of the first metal layer,
wherein the forming of each of the first metal oxide layer and the second metal oxide layer comprises performing a radio frequency (RF) sputtering process using a plurality of targets.

Assignees

• Kim Ki Woong
• Kim Juhyun
• Park Yong Sung
• Oh Sechung
• Lee Joonmyoung
• Lim Woo Chang
• Samsung Electronics Co Ltd

Inventors

• Kim Ki Woong
• Kim Juhyun
• Park Yong Sung
• Oh Sechung
• Lee Joonmyoung
• Lim Woo Chang

Classifications

• H01L27/228

  Electricity · mapped topic

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/12

  Electricity · mapped topic

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C11/1657 Primary

  Word-line or row circuits · CPC title