Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
US-2015380237-A1 · Dec 31, 2015 · US
Highly transparent aluminum nitride single crystalline layers and devices made therefrom
US9840790B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9840790-B2 |
| Application number | US-201214422888-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 23, 2012 |
| Priority date | Aug 23, 2012 |
| Publication date | Dec 12, 2017 |
| Grant date | Dec 12, 2017 |
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Abstract
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The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
First claim
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What is claimed is: 1. A highly transparent single crystalline AlN layer having a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm −1 at a wavelength of 265 nm. 2. The highly transparent single crystalline AlN layer of claim 1 , the single crystalline AlN layer having a refractive index in the c-axis direction larger than the refractive index in the a-axis direction, wherein the d…
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- C30B25/20Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9840790B2 cover?
- The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 …
- Who is the assignee on this patent?
- Koukitu Akinori, Kumagai Yoshinao, Nagashima Toru, and 10 more
- What technology area does this patent fall under?
- Primary CPC classification C30B25/20. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 12 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).