Method for making nanowire structure

Patent metadata

Field	Value
Publication number	US-9840773-B2
Application number	US-201414277214-A
Country	US
Kind code	B2
Filing date	May 14, 2014
Priority date	Nov 14, 2008
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires.

First claim

What is claimed is:

1. A method for making a nanowire structure, the method comprising:
providing a carbon nanotube structure;
forming a first reacting material layer on a surface of the carbon nanotube structure;
forming a second reacting material layer on a surface of the first reacting material layer, wherein both the first reacting material layer and the second reacting material layer are solid, the first reacting material layer consists of a first material, and the second reacting material layer consists of a second material that is different from the first material; and
activating the first reacting material layer and the second reacting material layer, wherein the activating the first reacting material layer and the second reacting material layer comprises laser scanning partial surface of the carbon nanotube structure so that the first reacting material layer and the second reacting material layer have a diffusion reaction and the first reacting material layer and the second reacting material layer react with each other.

2. The method as claimed in claim 1 , wherein the providing the carbon nanotube structure comprises suspending a drawn carbon nanotube film comprising a plurality of carbon nanotubes oriented along a preferred orientation and joined end to end by van der Waals attractive forces therebetween.

3. The method as claimed in claim 1 , wherein a total thickness of the first reacting material layer and the second reacting material layers ranges from about 50 nanometers to about 200 nanometers.

4. The method as claimed in claim 1 , wherein the first reacting material layer is a metal layer.

5. The method as claimed in claim 4 , wherein the metal layer is Al layer or Ti layer.

6. The method as claimed in claim 4 , wherein the second reacting material layer is a silicon layer.

7. The method as claimed in claim 1 , wherein both the first reacting material layer and the second reacting material layer are metal layers.

8. The method as claimed in claim 7 , wherein the first reacting material layer and the second reacting material layer are Al layer and Ti layer respectively, or Al layer and Ni layer respectively.

9. A method for making a nanowire structure, the method comprising:
suspending a free-standing carbon nanotube structure;
introducing at least two reacting materials into the free-standing carbon nanotube structure, wherein the at least two reacting materials are solid and form a first reacting material layer and the second reacting material layer stacked with each other, the first reacting material layer consists of a first material, and the second reacting material layer consists of a second material that is different from the first material; and
activating the at least two reacting materials, wherein the activating the at least two reacting materials comprises laser scanning partial surface of the carbon nanotube structure so that the at least two reacting materials have a diffusion reaction and the first reacting material layer and the second reacting material layer react with each other.

10. The method as claimed in claim 9 , wherein a total thickness of the first reacting material layer and the second reacting material layer ranges from about 50 nanometers to about 200 nanometers.

11. The method as claimed in claim 9 , wherein the first reacting material layer is a metal layer.

12. The method as claimed in claim 11 , wherein the metal layer is Al layer or Ti layer.

13. The method as claimed in claim 11 , wherein the second reacting material layer is a silicon layer.

14. The method as claimed in claim 9 , wherein both the first reacting material layer and the second reacting material layer are metal layers.

15. The method as claimed in claim 14 , wherein the first reacting material layer and the second reacting material layer are Al layer and Ti layer respectively, or Al layer and Ni layer respectively.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wang Jia-Ping
• Jiang Kai-Li
• Li Qun-Qing
• Fan Shou-Shan

Classifications

• Y10S977/888

  Shaping or removal of materials, e.g. etching · CPC title

• C01G23/07

  Producing by vapour phase processes, e.g. halide oxidation · CPC title

• C04B35/62897

  Coatings characterised by their thickness · CPC title

• Y10S977/811

  Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx · CPC title

• Y10S977/901

  having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm · CPC title