Manufacturing method for a head slider coated with DLC

Patent metadata

Field	Value
Publication number	US-9840767-B2
Application number	US-201615089648-A
Country	US
Kind code	B2
Filing date	Apr 4, 2016
Priority date	Apr 4, 2016
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A manufacturing method for a head slider coated with Diamond-like Carbon (DLC) includes: providing a substrate that is to be finally made into a head slider; depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and doping a fluorine-doping (F-doping) layer on the DLC layer. Whereby the head slider has good film adhesion performance, higher hardness, better wear resistance, lower surface energy to obtain good hydrophobicity and oleophobicity, and lower fly height in HDD.

First claim

What is claimed is:

1. A manufacturing method for a head slider coated with Diamond-like Carbon (DLC), comprising:
providing a substrate that is to be finally made into a head slider;
depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and
forming fluorine ions on a top surface of the DLC layer to form a fluorine-doping (F-doping) layer on the DLC layer, while a 0V bias voltage is being applied to an anode of the substrate.

2. The manufacturing method according to claim 1 , further comprising cleaning the substrate by means of an ion beam etching (IBE) process.

3. The manufacturing method according to claim 2 , further comprising, before cleaning the substrate by means of the IBE process, pre-cleaning the substrate by means of ultrasonic waves.

4. The manufacturing method according to claim 1 , wherein said forming an F-doping layer on the DLC layer comprises forming the F-doping layer by means of an ion beam etching (IBE) process or an electron cyclotron resonance (ECR) process.

5. The manufacturing method according to claim 1 , wherein said forming an F-doping layer on the DLC layer comprises: using carbon tetrafluoride (CF 4 ) as doping gas, and controlling the CF 4 flux ranging from 40 sccm to 60 sccm.

6. The manufacturing method according to claim 5 , wherein said forming an F-doping layer on the DLC layer further comprises: rotating the substrate in a predetermined speed and applying the 0V bias voltage to the anode, during the deposition.

7. The manufacturing method according to claim 1 , wherein the DLC layer has a thickness ranging from 12 Ř to 30 Å.

8. The manufacturing method according to claim 1 , wherein the F-doping layer has a thickness ranging from 2 Ř to 6 Å.

9. The manufacturing method according to claim 1 , wherein the DLC layer is deposited by means of a filtered cathodic vacuum arc (FCVA) process, a physical vapor deposition (PVD) process or an electron cyclotron resonance (ECR) process.

Assignees

• Sae Magnetics Hk Ltd

Inventors

• Huang Jian Hui
• DING Xiao Ke
• Ma hong tao
• Fujii Ryuji
• HE Da Yao
• Fan De Jin

Classifications

• C23C14/022 Primary

  by means of bombardment with energetic particles or radiation · CPC title

• C23C14/0611

  Diamond · CPC title

• C23C14/5873

  Removal of material · CPC title

• C23C14/588

  by mechanical treatment · CPC title

• C23C14/34 Primary

  Sputtering · CPC title